Disclosed is a method for accessing memory cells arranged in rows and columns. The method includes activating a specific row of the rows of the memory cells, and flipping data bits stored in memory cells of the specific row in response to determining that concentrated activation occurs at the specific row.

A memory device includes a memory cell array, a row select circuit, a refresh controller and a memory control logic. The memory cell array includes memory cells arranged in rows and columns. The row select circuit is connected to the rows. The refresh controller controls the row select circuit to apply a refresh operating voltage to one or more rows. The memory control logic decodes a command received from a memory controller and outputs a refresh command and external refresh address information. The refresh controller controls the row select circuit to perform one of an external refresh operation and an internal refresh operation, based on the refresh command that is output from the memory controller and based on whether a first row-hammering row address of the internal refresh operation is identical with a second row-hammering row address of the external refresh operation.

A memory device according to some aspects of the inventive concepts includes a memory cell array including a plurality of banks, at least one Processing Element (PE) connected to at least one bank selected from the plurality of banks, and a control logic configured to control an active operation in which wordlines included in each of the plurality of banks is activated, and configured to control a refresh operation in which at least one bank is refreshed, based on a PE enable signal configured to selectively enable the at least one PE.

A memory includes: a memory core; a list storage circuit suitable for storing a weak row list of rows that are vulnerable to a row hammer attack in the memory core; and a row hammer attack detection circuit suitable for selecting rows that are row-hammer-attacked among rows in the memory core as hammered rows, and increasing a probability that the rows stored in the list storage circuit are selected as the hammered rows.

A memory device includes a memory cell array, an address manager and a refresh controller. The memory cell array includes a plurality of memory cells coupled to a plurality of word-lines. The address manager samples access addresses provided from a memory controller to generate sampling addresses and determines a capture address from among the access addresses, based on a time interval between refresh commands from the memory controller. The refresh controller refreshes target memory cells from among the plurality of memory cells based on one of a maximum access address from among the sampling address and the captured address.

A system includes a processing device that determines whether a memory bank is active and adds an activate command for a row of the memory bank accessed by an oldest command for the memory bank to a command scheduler in response to determining the memory bank is not active. The processing device determines whether the row of the memory bank has a corresponding row command in response to determining the memory bank is active. The processing device determines whether a close page mode is enabled or an open row timer has expired on the row and adds a precharge command to the command scheduler in response to determining the close page mode is enabled or the open row timer has expired. The processing device executes a command in the command scheduler based on a priority of commands included in the command scheduler.

A semiconductor memory device includes a memory cell array including memory cell row, each of which includes volatile memory cells, a row hammer management circuit, a repair control circuit and a connection logic. The row hammer management circuit counts access addresses associated with the memory cell rows to store counting values, and determines a hammer address associated with least one of the memory cell rows, which is intensively accessed, based on the counting values. The repair control circuit includes repair controllers, each of which includes a defective address storage, and repairs a defective memory cell row among the memory cell rows. The connection logic connects first repair controllers, which are unused for storing defective addresses, among the plurality of repair controllers, to the row hammer management circuit. The row hammer management circuit uses the first repair controllers as a storage resource to store a portion of the access addresses.

A semiconductor memory device includes a plurality of memory blocks including a plurality of word lines; a plurality of sense amplifying circuits, each being shared by adjacent memory blocks among the memory blocks; a refresh counter suitable for generating a counting address, a value of which increases according to a refresh command; an address storing circuit suitable for storing first and second target addresses by sampling an active address at different times; and a control circuit suitable for activating a word line corresponding to one of the counting address and the first target address according to the refresh command, and activating at least one word line corresponding to one or more of the active address and the second target address according to an active command.

First signaling indicative of instructions to enter a self-refresh (SREF) mode can be received concurrently by a plurality of memory dies. Responsive to a memory die of the plurality of memory dies entering the SREF mode, self-refreshing of memory banks of the memory die can be delayed, at the memory die and based on fuse states of an array of fuses of the memory die, an amount of time relative to receipt of the signaling by the memory die. Delaying self-refreshing of memory banks of memory dies in a staggered, or asynchronous, manner can evenly distribute power consumption of the memory dies so that the likelihood of an associated power spike is reduced or eliminated.

Several embodiments of memory devices and systems with selective page-based refresh are disclosed herein. In one embodiment, a memory device includes a controller operably coupled to a main memory having at least one memory region comprising a plurality of memory pages. The controller is configured to track, in one or more refresh schedule tables stored on the memory device and/or on a host device, a subset of memory pages in the plurality of memory pages configured to be refreshed according to a refresh schedule. In some embodiments, the controller is further configured to refresh the subset of memory pages in accordance with the refresh schedule.