The present disclosure includes apparatuses and methods related to a memory device as the store to pre-resolved instructions. An example apparatus comprises a memory device coupled to a host via a data bus and a control bus. The memory device includes an array of memory cells and sensing circuitry coupled to the array via a plurality of sense lines. The sensing circuitry includes sense amplifiers and a compute component configured to implement logical operations. A memory controller in the memory device is configured to receive a block of address translated instructions and/or constant data from the host. The memory controller is configured to write the address translated instructions and/or constant data to a plurality of locations in a bank of the memory device in parallel.

The present disclosure includes apparatuses and methods related to a memory device as the store to pre-resolved instructions. An example apparatus comprises a memory device coupled to a host via a data bus and a control bus. The memory device includes an array of memory cells and sensing circuitry coupled to the array via a plurality of sense lines. The sensing circuitry includes sense amplifiers and a compute component configured to implement logical operations. A memory controller in the memory device is configured to receive a block of address translated instructions and/or constant data from the host. The memory controller is configured to write the address translated instructions and/or constant data to a plurality of locations in a bank of the memory device in parallel.

Various implementations described herein are directed to an integrated circuit having core circuitry with an array of bitcells arranged in columns of bitcells that may represent bits. A first column of bitcells may represent a nearest bit of the bits, and a last column of bitcells may represent a farthest bit of the bits. The integrated circuit may include sense amplifier circuitry coupled to the core circuitry to assist with accessing data stored in the array of bitcells. The integrated circuit may include multiplexer circuitry coupled to the sense amplifier circuitry. The integrated circuit may include first bypass circuitry coupled to outputs of the sense amplifier circuitry at the farthest bit. The integrated circuit may include second bypass circuitry coupled to an output of the multiplexer circuitry at the nearest bit.

Various implementations described herein are directed to an integrated circuit having core circuitry with an array of bitcells arranged in columns of bitcells that may represent bits. A first column of bitcells may represent a nearest bit of the bits, and a last column of bitcells may represent a farthest bit of the bits. The integrated circuit may include sense amplifier circuitry coupled to the core circuitry to assist with accessing data stored in the array of bitcells. The integrated circuit may include multiplexer circuitry coupled to the sense amplifier circuitry. The integrated circuit may include first bypass circuitry coupled to outputs of the sense amplifier circuitry at the farthest bit. The integrated circuit may include second bypass circuitry coupled to an output of the multiplexer circuitry at the nearest bit.

Various implementations described herein are directed to an integrated circuit having core circuitry with an array of bitcells arranged in columns of bitcells that may represent bits. A first column of bitcells may represent a nearest bit of the bits, and a last column of bitcells may represent a farthest bit of the bits. The integrated circuit may include sense amplifier circuitry coupled to the core circuitry to assist with accessing data stored in the array of bitcells. The integrated circuit may include multiplexer circuitry coupled to the sense amplifier circuitry. The integrated circuit may include first bypass circuitry coupled to outputs of the sense amplifier circuitry at the farthest bit. The integrated circuit may include second bypass circuitry coupled to an output of the multiplexer circuitry at the nearest bit.

Memory devices may provide a communication interface that is configured to receive control signals, and/or address signals from user circuitry, such as a processor. The memory device may receive and process signals employing different signal paths that may have different latencies, leading to clock skews. Embodiments discussed herein the application are related to interface circuitry that may decrease certain response times of the memory device by adding delays that minimize the clock skews. For example, a delay in a control path, such as a chip select path, may allow reduction in a delay of an address path, and leading to a decrease of the access time of the memory device. Embodiments also disclose how training modes may be employed to further adjust the delays in the control and/or address paths to decrease access times during regular operation.

Memory devices may provide a communication interface that is configured to receive control signals, and/or address signals from user circuitry, such as a processor. The memory device may receive and process signals employing different signal paths that may have different latencies, leading to clock skews. Embodiments discussed herein the application are related to interface circuitry that may decrease certain response times of the memory device by adding delays that minimize the clock skews. For example, a delay in a control path, such as a chip select path, may allow reduction in a delay of an address path, and leading to a decrease of the access time of the memory device. Embodiments also disclose how training modes may be employed to further adjust the delays in the control and/or address paths to decrease access times during regular operation.

A semiconductor device includes a strobe transmission circuit configured to output an oscillation strobe signal, through a first delay path circuit, as a strobe signal when a first measurement operation is performed and configured to output the oscillation strobe signal through a second delay path circuit as the strobe signal when a second measurement operation is performed, and a calibration circuit configured to compare the number of times the strobe signal toggles during the first measurement operation to the number of times the strobe signal toggles during the second measurement operation to calibrate the delay amounts of the first and second delay path circuits to be the same.

A semiconductor memory device including a pair of first bit lines extended in a first direction, a pair of second bit lines extended in the first direction, a first word line extended in a second direction crossing the first direction, a second word line extended in the second direction, a memory cell surrounded by the first bit line, the second bit line, the first word line, and the second word line, and including a drive transistor, a first transfer transistor coupled with one of the pair of first bit lines, and having a gate coupled with the first word line, a second transfer transistor coupled with one of the pair of second bit lines, and having a gate coupled with the second word line, and a load transistor, a write drive circuit that transfers data to the memory cell.

Memory devices may provide a communication interface that is configured to receive control signals, and/or address signals from user circuitry, such as a processor. The memory device may receive and process signals employing different signal paths that may have different latencies, leading to clock skews. Embodiments discussed herein the application are related to interface circuitry that may decrease certain response times of the memory device by adding delays that minimize the clock skews. For example, a delay in a control path, such as a chip select path, may allow reduction in a delay of an address path, and leading to a decrease of the access time of the memory device. Embodiments also disclose how training modes may be employed to further adjust the delays in the control and/or address paths to decrease access times during regular operation.