A circuit includes a dynamic core data register (DCDR) cell that includes a data register, a shift register and an output circuit to route the output state of the data register or the shift register to an output of the DCDR in response to an output control input. A clock gate having a gate control input controls clocking of the shift register in response to a first scan enable signal. An output control gate controls the output control input of the output circuit and controls which outputs from the data register or the shift register are transferred to the output of the output circuit in response to a second scan enable signal. The first scan enable signal and the second scan enable signal to enable a state transition of the shift register at the output of the DCDR.

A non-volatile computer data storage programming system includes a scan chain modification configured to receive a default model defining a scan chain of an industry standardized device. A controller is in signal communication with the scan chain modification system, and is configured to program an industry standardized device. A non-volatile computer data storage device is configured to receive data from the industry standardized device. The scan chain modification system modifies the default model to generate a new model including a reduced scan chain, and the controller programs the industry standardized device based on the new model such that the industry standardized device is programmed with the reduced scan chain.

A programmable logic device (PLD) supports scan testing of configurable logical blocks using scannable word line (WL) shift register (WLSR) chains to enable writes to configurable memory bits while scan test data is input via a scan chain comprising scannable bit line (BL) shift registers (BLSRs). Input test data may be shifted onto BLs to write data into a configurable memory bit when a corresponding WL associated with the configurable memory bit is asserted. Logic blocks may comprise: latch-based configurable memory bits, scannable WLSRs forming a distinct WLSR chain in shift mode and driving corresponding WLs. Each WL, when asserted, enables writes to a corresponding configurable memory bit. A scannable BLSR receives serial scan test vector input in shift mode and drives a corresponding BL coupled to the configurable memory bit to write data to the configurable memory bit when the associated WL is asserted.

The present disclosure relates to an apparatus comprising a non-volatile memory architecture configured to be coupled to a System-on-Chip (SoC) device. The non-volatile memory device coupled to the SoC having a structurally independent structure linked to the SoC includes a plurality of sub arrays forming a matrix of memory cells with associated decoding and sensing circuitry, sense amplifiers coupled to a corresponding sub array, a data buffer comprising a plurality of JTAG cells coupled to outputs of the sense amplifiers; and a scan-chain connecting together the JTAG cells of the data buffer.

Volatile memory devices may be on a first memory module that is coupled to a memory controller by a first signal path. A nonvolatile memory device may be on a second memory module that is coupled to the first memory module by a second signal path. A memory transaction for the nonvolatile memory device may be transferred from the memory controller to at least one of the volatile memory devices using the first signal path and data associated with the memory transaction is to be written from at least one of the volatile memory devices to the nonvolatile memory device using the second signal path and a control signal. A durability circuit may generate the control signal based on a comparison of a number of write transactions to a particular memory location with a threshold value.

The present disclosure relates to an apparatus, and a method for memory management and more a memory device structured with internal analogic measurement mode features. The memory device includes memory component having a memory array, a memory controller coupled to the memory component, a JTAG interface in the memory controller, voltage and current reference generators, and an analogic measurement block driven by the JTAG interface.

The present disclosure relates to an apparatus comprising a non-volatile memory architecture configured to be coupled to a System-on-Chip (SoC) device. The non-volatile memory device coupled to the SoC having a structurally independent structure linked to the SoC includes a plurality of sub arrays forming a matrix of memory cells with associated decoding and sensing circuitry, sense amplifiers coupled to a corresponding sub array, a data buffer comprising a plurality of JTAG cells coupled to outputs of the sense amplifiers; and a scan-chain connecting together the JTAG cells of the data buffer.

A semiconductor device capable of monitoring a connection state of a terminal on a semiconductor chip includes a selector configured to acquire terminal levels of a plurality of respective terminals on the semiconductor chip to which an inspection pattern is inputted based on a detection signal, a memory configured to store latch data based on a chip address which identifies the semiconductor chip and a plurality of the terminal levels corresponding to the plurality of terminals based on the detection signal, an output circuit configured to read a plurality of pieces of latch data from the memory based on the detection signal and to output the plurality of pieces of latch data, and a timing control circuit configured to generate the detection signal by detecting an edge of a clock inputted during an inspection mode and configured to activate the selector, the memory, and the output circuit.

The present disclosure relates to an apparatus comprising: a host device or a System-on-Chip: a memory component having an independent structure and including at least an array of memory cells organized in sub-arrays with associated decoding and sensing circuitry; a JTAG interface in said at least an array of memory cells including a boundary-scan architecture; an instruction register in said boundary-scan architecture of the JTAG interface including at least a couple of Bits indicative of the presence of a Test Data Input (TDI) signal. The apparatus has an extended TDI functionality using the data IO to improve the overall performances. A method for improving the communication between a Host or SoC device and an associated independent memory component is also disclosed.

A circuit comprises a plurality of scan chains. The plurality of scan chains comprises bidirectional scan cells. Each of the bidirectional scan cells comprises two serial input-output ports serving as either a serial data input port or a serial data output port based on a control signal. Each of the plurality of scan chains is configured to perform a shift operation in either a first direction or a second direction based on the control signal. The first direction is opposite to the second direction.