A semiconductor device capable of monitoring a connection state of a terminal on a semiconductor chip includes a selector configured to acquire terminal levels of a plurality of respective terminals on the semiconductor chip to which an inspection pattern is inputted based on a detection signal, a memory configured to store latch data based on a chip address which identifies the semiconductor chip and a plurality of the terminal levels corresponding to the plurality of terminals based on the detection signal, an output circuit configured to read a plurality of pieces of latch data from the memory based on the detection signal and to output the plurality of pieces of latch data, and a timing control circuit configured to generate the detection signal by detecting an edge of a clock inputted during an inspection mode and configured to activate the selector, the memory, and the output circuit.

Testability of memory on integrated circuits is improved by connecting storage elements like latches in memory to scan chains and configuring memory for scan dump. The use of latches and similar compact storage elements to form scannable memory can extend the testability of high-density memory circuits on complex integrated circuits operable at high clock speeds. A scannable memory architecture includes an input buffer with active low buffer latches, and an array of active high storage latches, operated in coordination to enable incorporation of the memory into scan chains for ATPG/TT and scan dump testing modes.

Testability of memory on integrated circuits is improved by connecting storage elements like latches in memory to scan chains and configuring memory for scan dump. The use of latches and similar compact storage elements to form scannable memory can extend the testability of high-density memory circuits on complex integrated circuits operable at high clock speeds. A scannable memory architecture includes an input buffer with active low buffer latches, and an array of active high storage latches, operated in coordination to enable incorporation of the memory into scan chains for ATPG/TT and scan dump testing modes.

A processor unit includes a memory and an ALU coupled with the memory. The processor unit also comprises a test controller, a test control register, and a signature register. The test controller manages a series of steps to test the processor unit. It overrides an ALU control signal with a replacement ALU control signal, stored in the test control register. It generates a test pattern and writes it to a memory address. It reads memory output data from the memory address, and forwards it to the ALU. The ALU executes an operation on the memory output data based on the replacement ALU control signal. The ALU output provides a test result, which is compressed to obtain a test signature, and stored in the signature register.

Testability of memory on integrated circuits is improved by connecting storage elements like latches in memory to scan chains and configuring memory for scan dump. The use of latches and similar compact storage elements to form scannable memory can extend the testability of high-density memory circuits on complex integrated circuits operable at high clock speeds. A scannable memory architecture includes an input buffer with active low buffer latches, and an array of active high storage latches, operated in coordination to enable incorporation of the memory into scan chains for ATPG/TT and scan dump testing modes.

A circuit includes a dynamic core data register (DCDR) cell that includes a data register, a shift register and an output circuit to route the output state of the data register or the shift register to an output of the DCDR in response to an output control input. A clock gate having a gate control input controls clocking of the shift register in response to a first scan enable signal. An output control gate controls the output control input of the output circuit and controls which outputs from the data register or the shift register are transferred to the output of the output circuit in response to a second scan enable signal. The first scan enable signal and the second scan enable signal to enable a state transition of the shift register at the output of the DCDR.

The present disclosure relates to a Flash memory component having a structurally independent structure and coupled to a System-on-Chip through a plurality of interconnection pads, comprising: a memory array including a plurality of independently addressable sub arrays; sense amplifiers coupled to corresponding outputs of said sub arrays and coupled to a communication channel of said System-on-Chip; a scan-chain comprising modified JTAG cells coupled in parallel between the output of the sense amplifiers and said communication channel to allow performing read operations in a Direct Memory Access. A method for retrieving data from the memory component is also disclosed.

Unavoidable physical phenomena, such as an alpha particle strikes, can cause soft errors in integrated circuits. Materials that emit alpha particles are ubiquitous, and higher energy cosmic particles penetrate the atmosphere and also cause soft errors. Some soft errors have no consequence, but others can cause an integrated circuit to malfunction. In some applications (e.g. driverless cars), proper operation of integrated circuits is critical to human life and safety. To minimize or eliminate the likelihood of a soft error becoming a serious malfunction, detailed assessment of individual potential soft errors and subsequent processor behavior is necessary. Embodiments of the present disclosure facilitate emulating a plurality of different, specific soft errors. Resilience may be assessed over the plurality of soft errors and application code may be advantageously engineered to improve resilience. Normal processor execution is halted to inject a given state error through a scan chain, and execution is subsequently resumed.

A memory circuit includes input multiplexers passing one of a pair of input bits. A first input multiplexer receives a first data bit and a serial input bit. Additional input multiplexers receive either a respective pair of data (D) bits, or a write-enable (WEN) bit and a single D bit. Scan latches receive one of the input bits and provide a scan output bit. OR gates arranged receive the scan output bit from a different scan latch, and perform a logical OR operation thereon to generate an OR output bit. Downstream output multiplexers pass a corresponding bit from a bit array or the OR output bit from a corresponding OR gate, and sense latches receive the corresponding bit from one of the output multiplexers and provide a sense output bit. Each sense output bit feeds into one or more input multiplexers when a bit-write-mask function is disabled.

A memory circuit includes input multiplexers passing one of a pair of input bits. A first input multiplexer receives a first data bit and a serial input bit. Additional input multiplexers receive either a respective pair of data (D) bits, or a write-enable (WEN) bit and a single D bit. Scan latches receive one of the input bits and provide a scan output bit. OR gates arranged receive the scan output bit from a different scan latch, and perform a logical OR operation thereon to generate an OR output bit. Downstream output multiplexers pass a corresponding bit from a bit array or the OR output bit from a corresponding OR gate, and sense latches receive the corresponding bit from one of the output multiplexers and provide a sense output bit. Each sense output bit feeds into one or more input multiplexers when a bit-write-mask function is disabled.