In example implementations, an integrated characterization vehicle is provided. The integrated characterization vehicle includes a memristor, a configuration cache and an analog measurement tile. The memristor has a driving unit to limit an amount of current that is driven through the memristor during testing. The configuration cache provides test parameters to control the testing of the memristor. The analog measurement tile provides a voltage to the memristor in accordance with the test parameters and to record a response of the memristor.

In example implementations, an integrated characterization vehicle is provided. The integrated characterization vehicle includes a memristor, a configuration cache and an analog measurement tile. The memristor has a driving unit to limit an amount of current that is driven through the memristor during testing. The configuration cache provides test parameters to control the testing of the memristor. The analog measurement tile provides a voltage to the memristor in accordance with the test parameters and to record a response of the memristor.

A memory device, a memory system, and corresponding methods are provided. The memory device includes a non-volatile random access memory. The non-volatile memory includes a suspect bit register configured to store addresses of bits that are determined to have had errors. The non-volatile memory further includes a bad bit register configured to store addresses of bits that both (i) appeared in the suspect bit register due to a first error and (ii) are determined to have had a second error. Hence, the memory device overcomes the aforementioned intrinsic write-error-rate by identifying the bad bits so they can be fused out, thus avoiding errors during use of the non-volatile random access memory.

A memory circuit includes a plurality of banks and a controller, each bank of the plurality of banks includes a plurality of segments, and each segment of the plurality of segments includes a plurality of bit lines and a plurality of word lines. A word line switch corresponding to a word line of a segment of the memory circuit is turned on and data are written into memory cells of the segment coupled to a plurality of bit lines of the segment and corresponding to the word line in turn after the controller enables an active command corresponding to the word line. When the controller enables at least one copy row write command, the data are simultaneously written into memory cells sharing a plurality of sense amplifiers with the plurality of bit lines of the segment and corresponding to at least one another word line.

A memory circuit includes a plurality of banks and a controller, each bank of the plurality of banks includes a plurality of segments, and each segment of the plurality of segments includes a plurality of bit lines and a plurality of word lines. A word line switch corresponding to a word line of a segment of the memory circuit is turned on and data are written into memory cells of the segment coupled to a plurality of bit lines of the segment and corresponding to the word line in turn after the controller enables an active command corresponding to the word line. When the controller enables at least one copy row write command, the data are simultaneously written into memory cells sharing a plurality of sense amplifiers with the plurality of bit lines of the segment and corresponding to at least one another word line.

The semiconductor memory device includes a memory cell array, a peripheral circuit and a control logic. The memory cell array includes a plurality of memory cells. The peripheral circuit performs a program operation for the plurality of memory cells in the memory cell array. The control logic controls the peripheral circuit and the memory cell array such that, during the program operation for the plurality of memory cells, pre-bias voltages are applied to a plurality of word lines coupled to the plurality of memory cells to precharge channel regions of the plurality of memory cells. Furthermore, different pre-bias voltages are applied to the plurality of word lines depending on the relative positions of the word lines.

The semiconductor memory device includes a memory cell array, a peripheral circuit and a control logic. The memory cell array includes a plurality of memory cells. The peripheral circuit performs a program operation for the plurality of memory cells in the memory cell array. The control logic controls the peripheral circuit and the memory cell array such that, during the program operation for the plurality of memory cells, pre-bias voltages are applied to a plurality of word lines coupled to the plurality of memory cells to precharge channel regions of the plurality of memory cells. Furthermore, different pre-bias voltages are applied to the plurality of word lines depending on the relative positions of the word lines.

A memory controller includes a generator circuit configured to generate a predetermined pattern of data, an address input, and a memory interface circuit. The memory interface circuit is configured to write the predetermined pattern of data to a memory at an address identified in the address input. The memory interface circuit is further configured to read a stored pattern of data from the memory at the address. The memory controller further includes an integrity checker circuit configured to compare the predetermined pattern of data and the stored pattern of data and identify an error of the memory based upon the comparison.

An integrated circuit (IC) having a scan compression architecture includes decompression logic coupled between test access input and a block of IC elements (e.g. flip-flops) coupled together to define a plurality of scan paths. The block of IC elements includes an initial data selector at an initial position of each of the scan paths, and an additional data selector downstream within at least one of the scan paths and configured to reconfigure an order of the IC elements within the at least one scan path. Compression logic is coupled between the block of IC elements and a test access output.

An integrated circuit (IC) having a scan compression architecture includes decompression logic coupled between test access input and a block of IC elements (e.g. flip-flops) coupled together to define a plurality of scan paths. The block of IC elements includes an initial data selector at an initial position of each of the scan paths, and an additional data selector downstream within at least one of the scan paths and configured to reconfigure an order of the IC elements within the at least one scan path. Compression logic is coupled between the block of IC elements and a test access output.