When a screening test at a normal temperature is performed instead of a low temperature screening test of SRAM, overkill is reduced and risk of outflow of defects due to local variation is suppressed.

An SRAM including a word line, a bit line pair, a memory cell, and a drive circuit that drives the bit line pair is provided with a function that can drive one bit line of the bit line pair at a high level (VDD) potential and drive the other bit line at an intermediate potential (VSS+several tens mV to one handled and several tens mV) a little higher than a low level (VSS) potential for normal writing when writing data into the memory cell.

A memory circuit includes a plurality of banks and a controller, each bank of the plurality of banks includes a plurality of segments, and each segment of the plurality of segments includes a plurality of bit lines and a plurality of word lines. A word line switch corresponding to a word line of a segment of the memory circuit is turned on and data are written into memory cells of the segment coupled to a plurality of bit lines of the segment and corresponding to the word line in turn after the controller enables an active command corresponding to the word line. When the controller enables at least one copy row write command, the data are simultaneously written into memory cells sharing a plurality of sense amplifiers with the plurality of bit lines of the segment and corresponding to at least one another word line.

A memory circuit capable of being quickly written in data includes a plurality of banks, and each bank of the plurality of banks includes a plurality of segments. Each segment of the plurality of segments includes a plurality of bit line groups, and each bit line group of the plurality of bit line groups corresponds to a pre-charge line. When a predetermined signal is enabled, a potential is written into memory cells of the each segment corresponding to the each bit line group through the pre-charge line and the each bit line group.

A memory device includes a controller, a multiplexer, a deserializer, a data modifier, a memory cell array and an error detector. The controller is configured to generate signals in response to an address signal and a command signal. The multiplexer is configured to output a clock signal as internal data signals when the test mode signal is activated. The deserializer is configured to deserialize N bit values included in the internal data signals to generate deserialized signals. The data modifier is configured to invert the deserialized signals to generate bit line signals in response to an inversion control signal and the data modifying signals. The memory cell array is configured to store the bit line signals to memory cells corresponding to the address signal. The error detector is configured to determine if an error exists in signals read from the memory cells and to output an error detecting signal.

A method for generating address translation stimuli for post-silicon functional validation is provided. The method includes determining a plurality of memory configurations based on a plurality of translation tables used by a stimuli generator to solve a plurality of test templates, providing a test template from the plurality of test templates, selecting a memory configuration from the plurality of memory configurations based on the test template, a memory variable, and a set of testing parameters, identifying a translation table from the plurality of translation tables based on the test template, allocating a memory space for the translation table, and executing the test template on the stimuli generator based on the translation table, the memory space, and the set of testing parameters.

A method for generating address translation stimuli for post-silicon functional validation is provided. The method includes determining a plurality of memory configurations based on a plurality of translation tables used by a stimuli generator to solve a plurality of test templates, providing a test template from the plurality of test templates, selecting a memory configuration from the plurality of memory configurations based on the test template, a memory variable, and a set of testing parameters, identifying a translation table from the plurality of translation tables based on the test template, allocating a memory space for the translation table, and executing the test template on the stimuli generator based on the translation table, the memory space, and the set of testing parameters.

An integrated circuit (IC) having a scan compression architecture includes decompression logic coupled between test access input and a block of IC elements (e.g. flip-flops) coupled together to define a plurality of scan paths. The block of IC elements includes an initial data selector at an initial position of each of the scan paths, and an additional data selector downstream within at least one of the scan paths and configured to reconfigure an order of the IC elements within the at least one scan path. Compression logic is coupled between the block of IC elements and a test access output.

An integrated circuit (IC) having a scan compression architecture includes decompression logic coupled between test access input and a block of IC elements (e.g. flip-flops) coupled together to define a plurality of scan paths. The block of IC elements includes an initial data selector at an initial position of each of the scan paths, and an additional data selector downstream within at least one of the scan paths and configured to reconfigure an order of the IC elements within the at least one scan path. Compression logic is coupled between the block of IC elements and a test access output.

A sequence of contiguous pages in an erase block in a non-volatile memory device is programmed and erased. Next, all of the pages in the erase block are programmed with data. Then, the data is read back and verified to determine whether there is an error in the data. When there is an error in the data, then the last page in the sequence is identified as being unstable. If there is no error in the data, then the last page in that sequence is identified as being stable. Thus, the recorded information identifies a point of instability in the erase block. Instabilities can be stabilized by performing additional writes to fill the partially filled word line.

A method of operating a memory module including a plurality of semiconductor memory devices organized into a multi-rank memory on a DIMM and a memory buffer included on the DIMM, operatively coupled to the multi-rank memory, can be provided by mapping an access to the DIMM from a memory controller to semiconductor memory devices included in more than one rank within the multi-rank memory based on a mode register set signal and selectively linking rank control signals during a parallel bit test operation to the more than one rank within the multi-rank memory plurality of semiconductor memory devices.