A memory system may include: an error correction code (ECC) generation circuit suitable for generating an M-bit error correction code using N-bit data, where N and M are positive integers; a memory core suitable for storing the N-bit data and the M-bit error correction code; and an ECC circuit suitable for correcting an error of the N-bit data read from the memory core, using the M-bit error correction code read from the memory core, wherein the ECC generation circuit generates the M-bit error correction code using an M(N+M) check matrix, wherein one column vector among M column vectors corresponding to the M-bit error correction code in the M(N+M) check matrix has an odd weight, and the other M column vectors have even weights.

The semiconductor memory device includes a memory cell array, a peripheral circuit and a control logic. The memory cell array includes a plurality of memory cells. The peripheral circuit performs a program operation for the plurality of memory cells in the memory cell array. The control logic controls the peripheral circuit and the memory cell array such that, during the program operation for the plurality of memory cells, pre-bias voltages are applied to a plurality of word lines coupled to the plurality of memory cells to precharge channel regions of the plurality of memory cells. Furthermore, different pre-bias voltages are applied to the plurality of word lines depending on the relative positions of the word lines.

The semiconductor memory device includes a memory cell array, a peripheral circuit and a control logic. The memory cell array includes a plurality of memory cells. The peripheral circuit performs a program operation for the plurality of memory cells in the memory cell array. The control logic controls the peripheral circuit and the memory cell array such that, during the program operation for the plurality of memory cells, pre-bias voltages are applied to a plurality of word lines coupled to the plurality of memory cells to precharge channel regions of the plurality of memory cells. Furthermore, different pre-bias voltages are applied to the plurality of word lines depending on the relative positions of the word lines.

A memory controller includes a generator circuit configured to generate a predetermined pattern of data, an address input, and a memory interface circuit. The memory interface circuit is configured to write the predetermined pattern of data to a memory at an address identified in the address input. The memory interface circuit is further configured to read a stored pattern of data from the memory at the address. The memory controller further includes an integrity checker circuit configured to compare the predetermined pattern of data and the stored pattern of data and identify an error of the memory based upon the comparison.

A memory controller includes a generator circuit configured to generate a predetermined pattern of data, an address input, and a memory interface circuit. The memory interface circuit is configured to write the predetermined pattern of data to a memory at an address identified in the address input. The memory interface circuit is further configured to read a stored pattern of data from the memory at the address. The memory controller further includes an integrity checker circuit configured to compare the predetermined pattern of data and the stored pattern of data and identify an error of the memory based upon the comparison.

A Memory device comprising a matrix of memory cells, the matrix being provided with at least one first column, the device also being provided with a test circuit configured to perform a test phase during a read operation to indicate whether or not the proportion of cells in said column storing the same logical data, particularly a logical 1, is greater than a predetermined threshold.

Various examples described herein are directed to systems and methods for generating data values using a NAND flash array. A memory controller may read a number of memory cells at the NAND flash array using an initial read level to generate a first raw string. The memory controller may determine that a difference between a number of bits from the first raw string having a value of logical zero and a number of bits from the first raw string having a value of logical one is greater than a threshold value and read the number of memory cells using a second read level to generate a second raw string. The memory controller may determine that a difference between a number of bits from the second raw string having a value of logical zero and a number of bits from the second raw string having a value of logical one is not greater than a threshold value and applying a cryptographic function using the second raw string to generate a first PUF value.

Various implementations described herein refer to a device having an encoder coupled to memory. The ECC encoder receives input data from memory built-in self-test circuitry, generates encoded data by encoding the input data and by adding check bits to the input data, and writes the encoded data to memory. The device may have an ECC decoder coupled to memory. The ECC decoder reads the encoded data from memory, generates corrected data by decoding the encoded data and by extracting the check bits from the encoded data, and provides the corrected data and double-bit error flag as output. The ECC decoder has error correction logic that performs error correction on the decoded data based on the check bits, wherein if the error correction logic detects a multi-bit error in the decoded data, the error correction logic corrects the multi-bit error in the decoded data to provide the corrected data.

Various implementations described herein refer to a device having an encoder coupled to memory. The ECC encoder receives input data from memory built-in self-test circuitry, generates encoded data by encoding the input data and by adding check bits to the input data, and writes the encoded data to memory. The device may have an ECC decoder coupled to memory. The ECC decoder reads the encoded data from memory, generates corrected data by decoding the encoded data and by extracting the check bits from the encoded data, and provides the corrected data and double-bit error flag as output. The ECC decoder has error correction logic that performs error correction on the decoded data based on the check bits, wherein if the error correction logic detects a multi-bit error in the decoded data, the error correction logic corrects the multi-bit error in the decoded data to provide the corrected data.

A memory system includes a memory device including memory cells, and a controller that performs a write operation, a read operation, and a check operation on the memory device. During the check operation, the controller controls the memory device to read check data from target memory cells of the memory cells by using a check level, compares the check data with original data stored in the target memory cells, and determines a reliability of the target memory cells or the check data based on a result of the comparison.