A memory includes an error detection circuit that identifies a faulty feature in an array of memory cells within the memory. A redundancy enable circuit functions to replace the faulty feature with a redundant feature. The error detection circuit and the redundancy enable circuit function concurrently with a read operation on the array of memory cells.

A method of testing a three dimensional (3D) memory cell array includes writing data to each layer of memory cells in the 3D memory cell array, simultaneously performing a read operation of each memory cell in at least a first pillar of the 3D memory cell array, determining whether a memory cell in the 3D memory cell array has failed in response to the read operation, and replacing at least one failed memory cell in the 3D memory cell array with a spare memory cell in response to determining that the memory cell in the 3D memory cell array has failed. The first pillar includes memory cells on each corresponding layer of the 3D memory cell array.

Disclosed in some examples are methods, systems, devices, memory devices, and machine-readable mediums for using a non-defective portion of a block of memory on which there is a defect on a different portion. Rather than disable the entire block, the system may disable only a portion of the block (e.g., a first deck of the block) and salvage a different portion of the block (e.g., a second deck of the block).

A computing system is disclosed. The computing system includes a computation unit, one or more processors, a volatile memory, and a non-volatile memory communicatively coupled to the one or more processors and having instructions stored thereon, which when executed by the one or more processors, causing the one or more processor to instantiate a container and perform at least one of a volatile memory checking procedure or a non-volatile memory checking procedure. The volatile memory checking procedure includes checking the first physical address space for errors, loading a container into volatile memory containing the first physical address space if an error is determined, rechecking the first physical address space for error, loading the container to a second physical address space and updating a memory management unit if an error in the first physical address space is determined.

A method for detecting a reading error of a datum in memory. A binary word which is representative of the datum and an error correcting or detecting code is read by: reading a first part of the binary word stored at a first address in a first memory circuit; and reading a second part of the binary word stored at a second address in a second memory circuit. The first and second parts read from the first and second memory circuits, respectively, are concatenated to form a read binary word. The datum is then obtained by removing the error correcting or detecting code from the read binary word. A new error correcting or detecting code is calculated from the obtained datum and compared to the removed error correcting or detecting code to detect error in the obtained datum.

An integrated circuit includes a memory and peripheral circuits with a temperature sensor used to automatically adjust operating voltages. The temperature sensor includes a first circuit to generate a temperature-dependent voltage (TDV) that is dependent on an operating temperature of the integrated circuit, and a second circuit to generate a plurality of temperature reference voltages, based on or more codes. One or more comparator circuits compare individual ones of the plurality of reference voltages with the TDV, to generate one or more comparison signals that are indicative of the operating temperature of the integrated circuit.

An electronic device includes: a detection circuit configured to determine one or more operating data, one or more device sensor data, or a combination thereof associated with operation of the electronic device; a trigger circuit operably coupled to the circuit, the trigger circuit configured to generate a stress input based on detecting one or more target criteria from the one or more operating data, the one or more device sensor data, or a combination thereof; and a degradation sensor operably coupled to the trigger circuit, the degradation sensor having a threshold voltage and being configured to record the target criteria that occurs during operation of the electronic device, wherein the degradation sensor is configured to record the target criteria based on degradation of the threshold voltage according to the stress input.

A method for the secured storing of a data element of a predefined data type to be stored by a computer program in an external memory, which is connected to a microcontroller, an error correction value of one error correction value data type being used. The method includes, when creating the computer program: defining a composite data element that includes one element of the data type and one element of the error correction value data type, in the computer program; and when executing the computer program: calculating the error correction value for the data element to be stored; forming an error correction data element as the composite data element, which contains the data element to be stored and the associated error correction value, which has been calculated for the data element; and writing the error correction data element to a memory address for the error correction data element.

Disclosed in some examples are methods, systems, devices, memory devices, and machine-readable mediums for using a non-defective portion of a block of memory on which there is a defect on a different portion. Rather than disable the entire block, the system may disable only a portion of the block (e.g., a first deck of the block) and salvage a different portion of the block (e.g., a second deck of the block).

A method of testing a three dimensional (3D) memory cell array includes writing data to each layer of memory cells in the 3D memory cell array, simultaneously performing a read operation of each memory cell in at least a first pillar of the 3D memory cell array, determining whether a memory cell in the 3D memory cell array has failed in response to the read operation, and replacing at least one failed memory cell in the 3D memory cell array with a spare memory cell in response to determining that the memory cell in the 3D memory cell array has failed. The first pillar includes memory cells on each corresponding layer of the 3D memory cell array.