A computing system is disclosed. The computing system includes a computation unit, one or more processors, a volatile memory, and a non-volatile memory communicatively coupled to the one or more processors and having instructions stored thereon, which when executed by the one or more processors, causing the one or more processor to instantiate a container and perform at least one of a volatile memory checking procedure or a non-volatile memory checking procedure. The volatile memory checking procedure includes checking the first physical address space for errors, loading a container into volatile memory containing the first physical address space if an error is determined, rechecking the first physical address space for error, loading the container to a second physical address space and updating a memory management unit if an error in the first physical address space is determined.

Embodiments relate methods and computer program products for performance testing of a solid state memory devices. The method includes operating a first solid state memory device for a period of time and capturing state information of the first solid state memory device after the period of time. The method also includes storing the state information in a control file and loading the control file onto a second solid state memory device. Once the control file has been loaded into the second solid state memory device the state information can be adapted to fix any issues due to physical variation. Performance testing can then be preformed on the second solid state memory device without preconditioning the second solid state memory device.

A memory test method and apparatus, an electronic device, and a computer-readable storage medium are provided. The method includes: obtaining a test instruction; generating, in response to the test instruction, a test clock signal, a to-be-tested address and to-be-tested data; determining a to-be-tested memory from memories of a storage device, the storage device including a self-test circuit; writing the to-be-tested data into a storage unit corresponding to the to-be-tested address of the to-be-tested memory; reading output data from the storage unit corresponding to the to-be-tested address of the to-be-tested memory; and comparing the to-be-tested data and the output data to obtain a test result of the to-be-tested memory. The self-test circuit disposed in the storage device is used to implement a memory test process. Thus, the dependency on automatic test equipment is reduced, thereby improving test speed and reducing test cost.

Embodiments of the present disclosure relate to solutions for introducing personalization data in nonvolatile memories of a plurality of integrated circuits, comprising writing in the nonvolatile memory of a given integrated circuit a static data image, corresponding to an invariant part of nonvolatile memory common to the plurality of integrated circuits, and a personalization data image representing data specific to the given integrated circuit.

A memory device includes a memory array having at least one memory bank, where the at least one memory bank includes a target memory array and a clone memory array. The clone memory array corresponds to the target memory array and is configured to store the same data as in the target memory array. When a command that is applied to the target memory array to perform an operation, the command is also applied to the clone memory array. An error detection method adapted to a memory device having at least one memory bank that comprises a target memory array and a clone memory array is also introduced.

A memory includes an error detection circuit that identifies a faulty feature in an array of memory cells within the memory. A redundancy enable circuit functions to replace the faulty feature with a redundant feature. The error detection circuit and the redundancy enable circuit function concurrently with a read operation on the array of memory cells.

A memory chip test method includes: a mode register write command is sent to a memory chip to control a memory chip to enter a test mode of Write Clock to clock leveling (Wck2ck Leveling); a first preset time is set, and a read and write clock signal is sent to the memory chip after waiting for the first preset time; a predicted value of the Wck2ck Leveling is determined according to the first preset time and a system clock cycle; after sending the read and write clock signal and waiting for a second preset time, a test data output port of the memory chip is detected to obtain a test value; and the test value and the predicted value are compared to determine whether the memory chip is abnormal. A method for testing a Wck2ck Leveling function is provided.

A method for detecting a writing error of a datum in memory includes: storing at least two parts of equal size of a binary word representative of said datum at the same address in at least two identical memory circuits, and comparing internal control signals of the two memory circuits to determine existence of the writing error.

Embodiments of the present disclosure provide a test method and apparatus for a control chip, an electronic device, relating to the field of semiconductor device test technology. The method includes: reading first test vectors stored in a first target memory chip; sending the first test vectors to the control chip; receiving first output information returned by the control chip in response to the first test vectors; and acquiring a first test result of the control chip based on the first output information and the first test vectors corresponding to the first output information. By means of the technical solutions provided in the embodiments of the present disclosure, a memory chip can be used for storing test vectors for a control chip, so that a storage space for test vectors can be enlarged, and the test efficiency can be increased.

Systems and methods of screening memory cells by modulating bitline and/or wordline voltage. In a read operation, the wordline may be overdriven or underdriven as compared to a nominal operating voltage on the wordline. In a write operation, the one or both of the bitline and wordline may be overdriven or underdriven as compared to a nominal operating voltage of each. A built-in self test (BIST) system for screening a memory array has bitline and wordline margin controls to modulate bitline and wordline voltage, respectively, in the memory array.