Systems and methods for internally preconditioning SSDs for various workloads are disclosed. One such method involves (1) receiving preconditioning parameters including an invalidity distribution across ribbons, a transfer size of workloads, and a randomness of workloads, (2) generating workload data including a percentage of random data and a percentage of non-random data, where the percentages are based on the randomness of workloads parameter, (3) determining preselected physical block addresses (PBAs) of a ribbon using the invalidity distribution parameter, (4) writing a portion of the workload data to each of the preselected PBAs of the ribbon using a preselected transfer size until the ribbon is full, where the transfer size is based on the transfer size of workloads parameter, (5) marking all PBAs of the ribbon that were not preselected using the invalidity distribution parameter as being invalid, and (6) repeating (2) to (5) until a preselected end condition is met.

A system includes a plurality of memory dice and a processing device coupled to the plurality of memory dice. The processing device is to determine whether an error correcting code (ECC) check of ECC-protected data read from a die of the plurality of memory dice results in detecting an error. In response to detecting the error from the ECC-protected data, the processing device performs a confirmation check that the error is a result of a defect in the die. In response to the confirmation check confirming the die is defective, the processing device ignores a temperature value from the die when determining whether to trigger a thermal-related operation.

Systems and methods for internally preconditioning SSDs for various workloads are disclosed. One such method involves (1) receiving preconditioning parameters including an invalidity distribution across ribbons, a transfer size of workloads, and a randomness of workloads, (2) generating workload data including a percentage of random data and a percentage of non-random data, where the percentages are based on the randomness of workloads parameter, (3) determining preselected physical block addresses (PBAs) of a ribbon using the invalidity distribution parameter, (4) writing a portion of the workload data to each of the preselected PBAs of the ribbon using a preselected transfer size until the ribbon is full, where the transfer size is based on the transfer size of workloads parameter, (5) marking all PBAs of the ribbon that were not preselected using the invalidity distribution parameter as being invalid, and (6) repeating (2) to (5) until a preselected end condition is met.

A test circuit including a test core configured to set a charging current quantity as a first value and perform charging and discharging on a test node of a test target circuit during a first measurement interval and configured to change the charging current quantity from the first value to a second value and perform charging and discharging on the test node during a second measurement interval, and an operation circuit configured to generate a first counting value by counting a clock signal during the first measurement interval, generate a second counting value by counting the clock signal during the second measurement interval, generate the results of an operation of the first counting value and the second counting value as operation results, and output at least one of the first counting value, the second counting value, and the operation results as test result information.

A memory chip test method includes: a mode register write command is sent to a memory chip to control a memory chip to enter a test mode of Write Clock to clock leveling (Wck2ck Leveling); a first preset time is set, and a read and write clock signal is sent to the memory chip after waiting for the first preset time; a predicted value of the Wck2ck Leveling is determined according to the first preset time and a system clock cycle; after sending the read and write clock signal and waiting for a second preset time, a test data output port of the memory chip is detected to obtain a test value; and the test value and the predicted value are compared to determine whether the memory chip is abnormal. A method for testing a Wck2ck Leveling function is provided.

Disclosed is a system that comprises a memory device comprising a plurality of memory planes and a processing device, operatively coupled with the plurality of memory planes, to perform operations that include, identifying a first block residing on a memory plane of the memory device, wherein the first block is associated with an error condition; and responsive to identifying the first block, performing an error recovery operation to replace the first block with a second block, wherein the second block resides on the memory plane.

A semiconductor memory apparatus includes an input/output pad, a first data input/output circuit, a first data transfer circuit, a second data transfer circuit, and a test data comparison circuit. The input/output pad may be coupled to an external equipment. The first data input/output circuit may be coupled to the input/output pad. The first data transfer circuit may transfer data output from the first data input/output circuit to a first data storage region in response to a test write signal and transfer data output from the first data storage region to the first data input/output circuit in response to a test read signal. The second data transfer circuit may transfer data output from the first data input/output circuit to a second data storage region in response to the test write signal and transfer data output from the second data storage region to a second data input/output circuit in response to the test read signal. The test data comparison circuit may generate a test result signal by comparing data output from the first data storage region, the second data storage region, the first data transfer circuit, and the second data transfer circuit and output the test result signal to the external equipment through the input/output pad.

A schedulable memory scrubbing circuit and/or a known-state memory test circuit (collectively, background memory test apparatus (BGMTA)) are located on-chip with an integrated computing system. The BGMTA operates in parallel with a system CPU but shares a system bus with the CPU. The BGMTA sequentially reads one word at a time from a block of memory to be tested during system bus idle cycles. The schedulable memory scrubbing circuit embodiment tests on-chip parity/ECC memory arrays using memory controller-implemented parity or ECC error detection to trigger error handling interrupts. The known-state memory test circuit embodiment performs CRC calculations on known-state memory arrays as each data word is read sequentially. A final resulting CRC calculation value is compared to a known CRC value for the block, sometimes referred to as a golden CRC. If the two CRC values differ, a CRC error interrupt is triggered for servicing by the CPU.

Apparatuses and methods are provided using a plurality of interrupted IC operations to detect various conditions or changes of interest to integrated circuit (IC) elements (e.g., memory cells of NAND Flash memories or floating gate transistor) such as program/erase stress, total ionizing dose, and heavy ion exposure which modify normal IC element bit state changes. An exemplary method can include controlling a plurality of selected IC elements to execute a series of PROGRAM or ERASE operations on all of the plurality of selected elements that are each interrupted or halted before a normal or first time period required for the PROGRAM or ERASE operation has elapsed. An exemplary system records a number of interrupted operations required to cause a state change in each of the plurality of selected IC elements. Embodiments of the invention enable detection of stresses far below at least some thresholds for IC element or bit cell failure.

Apparatuses and methods are provided using a plurality of interrupted IC operations to detect various conditions or changes of interest to integrated circuit (IC) elements (e.g., memory cells of NAND Flash memories or floating gate transistor) such as program/erase stress, total ionizing dose, and heavy ion exposure which modify normal IC element bit state changes. An exemplary method can include controlling a plurality of selected IC elements to execute a series of PROGRAM or ERASE operations on all of the plurality of selected elements that are each interrupted or halted before a normal or first time period required for the PROGRAM or ERASE operation has elapsed. An exemplary system records a number of interrupted operations required to cause a state change in each of the plurality of selected IC elements. Embodiments of the invention enable detection of stresses far below at least some thresholds for IC element or bit cell failure.