According to one embodiment, a liquid crystal display device includes touch-sensor electrodes, an array substrate including pixel electrodes, gate lines, source lines, switching elements, a light-shielding layer, and a plurality of stripe-like common electrodes, a counter-substrate, and a liquid crystal layer, wherein the common electrodes included in the array substrate are used not only as electrodes for display, but also as touch-sensor electrodes and, in a touch operation, a touch drive signal is input to each drive unit electrode including a plurality of common electrodes, and the light-shielding layer is divided into parts each of which corresponds to the drive unit electrode, and is provided to extend across a region opposed to a region of the drive unit electrode.

A display device and a method of fabricating the display device may simplify a fabrication process and reduce fabrication cost. The display device includes: a substrate; a gate line and a data line on the substrate; a switching element connected to the gate line and the data line, the switching element including a source electrode and a drain electrode; and a first pixel electrode connected to the switching element. At least one of the source electrode and the drain electrode of the switching element includes substantially a same material as a material included in the first pixel electrode.

A display panel and a display device are provided. The display panel includes a first base plate, a second base plate, and a liquid crystal layer. The first base plate includes a first substrate, an array structure layer, a color resistor layer on the array structure layer, and a pixel electrode layer on the color resistor layer. The color resistor layer includes at least three color resistor blocks, each of the color resistor blocks has a first opening. A first via is within the first opening.

An electro-optical device includes a translucent substrate, a transistor, a light-shielding body having light-shielding properties, including a metal and disposed between the substrate and the transistor, a first insulating layer having insulating properties and disposed between the light-shielding body and the transistor, the first insulating layer being in contact with the light-shielding body, and a second insulating layer having insulating properties and disposed between the first insulating layer and the transistor, the second insulating layer being in contact with the first insulating layer. A content of a predetermined element that is not an element of a main component in the first insulating layer is higher than a content of the predetermined element in the second insulating layer.

The present disclosure provides an array substrate including a display region and a frame region surrounding the display region. The display region further includes a plurality of second touch lines which are in parallel with the gate electrode lines, and each of the common electrode units is electrically connected to one of the second touch lines through a via hole. The frame region consists of a plurality of first switches and a plurality of test lines extending along a second direction, at least one end of each second touch line is connected to one of the first switches, and the test lines are electrically connected to the first switches.

An array substrate, a manufacturing method thereof and a display device are provided; in the array substrate, two adjacent rows of the pixel units (200) are taken as a group of pixel unit rows; in each group of the pixel unit rows, since the pixel electrodes in two adjacent pixel units (200) of a same column are all electrically connected with one composite transistor (300), and the composite transistor (300) can be turned on or off under the control of different levels of control voltages, to charge the pixel electrodes in two adjacent pixel units (200) of the same column at different times, each group of the pixel unit row can share a gate line located between the two rows of the pixel units, as compared with the conventional array substrate, the number of the gate lines disposed on the array substrate is reduced by half, so that the aperture ratio of the array substrate can be improved, and the brightness of the display panel can be further improved.

A semiconductor device having favorable electrical characteristics is provided. The semiconductor device is manufactured by a first step of forming a semiconductor layer containing a metal oxide, a second step of forming a first insulating layer, a third step of forming a first conductive film over the first insulating layer, a fourth step of etching part of the first conductive film to form a first conductive layer, thereby forming a first region over the semiconductor layer that overlaps with the first conductive layer and a second region over the semiconductor layer that does not overlap with the first conductive layer, and a fifth step of performing first treatment on the conductive layer. The first treatment is plasma treatment in an atmosphere including a mixed gas of a first gas containing an oxygen element but not containing a hydrogen element, and a second gas containing a hydrogen element but not containing an oxygen element.

According to one embodiment, a display device includes first and second source lines arranged along a first direction, a gate line including first and second portions arranged along a second direction intersecting the first direction, and a connection portion which connects the first portion and the second portion to each other and a semiconductor layer which intersects at least one of the first portion and the connection portion, and each of the first portion and the second portion intersects the first and second source lines and the connection portion is located between the first source line and the second source line.

A flexible array substrate structure and manufacturing method thereof are disclosed, in which the patterning process of an organic semi-conductive layer is achieved by using the inside wall of the opening of a color film layer as a bank, so that one mask can be saved. Also, a process for manufacturing a device can be simplified by an improved device structure, so that the flexible array substrate structure of the invention can be obtained by only using four masks.

A highly reliable semiconductor device is provided. A second insulating layer is positioned over a first insulating layer. A semiconductor layer is positioned between the first insulating layer and the second insulating layer. A third insulating layer is positioned over the second insulating layer. A fourth insulating layer is positioned over the third insulating layer. A first conductive layer includes a region overlapping with the semiconductor layer, and is positioned between the third insulating layer and the fourth insulating layer. The third insulating layer includes a region in contact with a bottom surface of the first conductive layer and a region in contact with the fourth insulating layer. The fourth insulating layer is in contact with atop surface and a side surface of the first conductive layer. A fifth insulating layer is in contact with a top surface and a side surface of the semiconductor layer. The fifth insulating layer includes a first opening and a second opening in a region overlapping with the semiconductor layer and not overlapping with the first conductive layer. A second conductive layer and a third conductive layer are electrically connected to the semiconductor layer in the first opening and the second opening, respectively. The third to fifth insulating layers include metal, and oxygen or nitrogen. A sixth insulating layer includes a region in contact with a top surface and a side surface of the fifth insulating layer and a region in contact with the first insulating layer.