An electronic device includes: a first substrate; a silicon semiconductor layer disposed on the first substrate; a first oxide semiconductor layer and a second oxide semiconductor layer disposed on the first substrate; a first conductive component disposed on the first substrate and electrically connected to the silicon semiconductor layer; and a second conductive component disposed on the first conductive component and electrically connected to at least one of the first oxide semiconductor layer and the second oxide semiconductor layer, wherein the second conductive component is at least partially overlapped with the first oxide semiconductor layer and the first conductive component.

An inspection circuit is properly protected in a display device, which the driver IC is not on the terminal area. A liquid crystal display device comprising a TFT substrate having a display area, in which video signal lines are formed, and a terminal area; a counter substrate overlapping with the display area of the TFT substrate; the counter substrate and the TFT substrate are adhered by the seal material, the display area is formed in an area surrounded by the seal material; wherein the flexible wiring circuit substrate connects to the terminal area, the driver IC, which supplies video signals to the video signal lines, is not installed in the terminal area, the inspection circuit is formed between the display area and the terminal area, wherein the inspection circuit overlaps with the counter substrate in a plan view.

A display device includes a substrate, a plurality of signal lines, a plurality of terminals, a plurality of wiring lines, metal wiring, a second metal layer, a third metal layer. In a first wiring region, each wiring line is composed of the first metal layer and extends in a second direction intersecting with the first direction. In a second wiring region between the first wiring region and the terminals, the wiring lines include the wiring line composed of the first metal layer and the second metal layer and the wiring line composed of the third metal layer. The metal wiring is provided in a different layer from the first metal layer; and intersects with the wiring lines in the first wiring region and extends in the first direction when viewed from a direction perpendicular to the substrate.

By increasing an interval between electrodes which drives liquid crystals, a gradient of an electric field applied between the electrodes can be controlled and an optimal electric field can be applied between the electrodes. The invention includes a first electrode formed over a substrate, an insulating film formed over the substrate and the first electrode, a thin film transistor including a semiconductor film in which a source, a channel region, and a drain are formed over the insulating film, a second electrode located over the semiconductor film and the first electrode and including first opening patterns, and liquid crystals provided over the second electrode.

A display device includes: a substrate including a display region and a peripheral region, wherein the peripheral region is adjacent to the display region; a first transistor disposed on the peripheral region, wherein the first transistor includes a first semiconductor layer and the first semiconductor layer is a silicon semiconductor layer; and a second transistor disposed on the display region, wherein the second transistor includes a second semiconductor layer and the second semiconductor layer is an oxide semiconductor layer, wherein the first transistor is electrically connected to the second transistor.

A liquid crystal display device with a high aperture ratio is provided. A liquid crystal display device with low power consumption is provided. The display device includes a display portion and a driver circuit portion. The display portion includes a liquid crystal element, a first transistor, a scan line, and a signal line. The driver circuit portion includes a second transistor. The liquid crystal element includes a pixel electrode, a liquid crystal layer, and a common electrode. Each of the scan line and the signal line is electrically connected to the first transistor. The scan line and the signal line each include a metal layer. The structure of the first transistor is different from that of the second transistor. The first transistor is electrically connected to the pixel electrode. The first transistor includes a first region connected to the pixel electrode. The pixel electrode, the common electrode, and the first region have a function of transmitting visible light. Visible light passes through the first region and the liquid crystal element and is emitted to the outside of the display device.

According to an embodiment of the present invention, an active matrix substrate (100) includes a display region (DR) defined by a plurality of pixel regions (P) arranged in a matrix and a peripheral region (FR) located around the display region. The active matrix substrate includes a substrate (1), a first TFT (10), and a second TFT (20). The first TFT is supported by the substrate and disposed in the peripheral region. The second TFT is supported by the substrate and disposed in the display region. The first TFT includes a crystalline silicon semiconductor layer (11), which is an active layer. The second TFT includes an oxide semiconductor layer (21), which is an active layer. The first TFT and the second TFT each have a top-gate structure.

A liquid crystal display device includes a transistor, a pixel electrode, and a common electrode. The transistor includes a first gate electrode on a first substrate, a second gate electrode having a region overlapping the first gate electrode, an oxide semiconductor layer between the first gate electrode and the second gate electrode, a first insulating layer between the first gate electrode and the oxide semiconductor layer, a second insulating layer between the oxide semiconductor layer and the second gate electrode, and a first oxide conductive layer and a second oxide conductive layer disposed between the first insulating layer and the oxide semiconductor layer and disposed with the first gate electrode and the second gate electrode sandwiched from both sides. The pixel electrode is disposed between the first and the second insulating layer; the common electrode is disposed a region overlapping with the pixel electrode and on the second insulating layer.

A display device includes a first substrate and a second substrate comprising a color filter film. The first substrate includes a first organic resin layer, a second organic resin layer over the first organic resin layer; and a first opening portion provided by opening the first organic resin layer and the second organic resin layer. The first organic resin layer includes a first opening side surface having a first taper angle greater than 0° and less than 80° in the first opening portion. The second organic resin layer includes a second side surface having a second taper angle greater than 80° and less than 90° in the first opening portion. The first opening side surface is covered with the second organic resin layer.

A highly reliable semiconductor device is provided. A second insulating layer is positioned over a first insulating layer. A semiconductor layer is positioned between the first insulating layer and the second insulating layer. A third insulating layer is positioned over the second insulating layer. A fourth insulating layer is positioned over the third insulating layer. A first conductive layer includes a region overlapping with the semiconductor layer, and is positioned between the third insulating layer and the fourth insulating layer. The third insulating layer includes a region in contact with a bottom surface of the first conductive layer and a region in contact with the fourth insulating layer. The fourth insulating layer is in contact with a top surface and a side surface of the first conductive layer. A fifth insulating layer is in contact with a top surface and a side surface of the semiconductor layer. The fifth insulating layer includes a first opening and a second opening in a region overlapping with the semiconductor layer and not overlapping with the first conductive layer. A second conductive layer and a third conductive layer are electrically connected to the semiconductor layer in the first opening and the second opening, respectively. The third to fifth insulating layers include metal, and oxygen or nitrogen. A sixth insulating layer includes a region in contact with a top surface and a side surface of the fifth insulating layer and a region in contact with the first insulating layer.