The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.

The present disclosure provides an array substrate and a display panel, which adopt a design of a single-gated layer, in which a first electrode plate of a storage capacitor is formed in the gate layer and a second electrode plate of the storage capacitor and various functional connection wires are formed in a source/drain layer. Paths used for electric current between different film layers are realized by various functional connection wires. Therefore, a layer of gate structure is omitted, one photomask process is saved, production cost is reduced, and a problem of high production costs of the current display devices is solved.

A semiconductor device with high aperture ratio is provided. The semiconductor device includes a transistor and a capacitor having a pair of electrodes. An oxide semiconductor layer formed over the same insulating surface is used for a channel formation region of the transistor and one of the electrodes of the capacitor. The other electrode of the capacitor is a transparent conductive film. One electrode of the capacitor is electrically connected to a wiring formed over the insulating surface over which a source electrode or a drain electrode of the transistor is provided, and the other electrode of the capacitor is electrically connected to one of the source electrode and the drain electrode of the transistor.

The present application discloses a display panel preparation method and a display panel. The display panel preparation method includes: forming a first metal layer, a buffer layer, an oxide film layer, and a gate insulating layer on a substrate; and etching on a second layer of metal by using a same mask process, to obtain a gate layer, a source layer, and a drain layer.

A display panel and a display device are provided. A pixel electrode of the display panel includes a pixel electrode body and a pixel electrode extension. The pixel electrode body is positioned within the light-emitting section and the pixel electrode extension is positioned within the light-shielding section. When an insulating layer positioned on an overlapping section is perforated, the pixel electrode extension is electrically connected to the signal electrode of other sub-pixel units via a repair line, thereby solving a technical problem that existing display panels possess a limited effect on repairing bright spots.

A liquid crystal display device includes an active matrix substrate, a counter substrate, and a liquid crystal layer. The active matrix substrate includes a top gate type oxide semiconductor TFT a plurality of gate wiring lines a plurality of source and an interlayer insulating layer The counter substrate includes a plurality of columnar spacers provided on a second substrate. Each columnar spacer is disposed in an intersecting region where the gate wiring line and the source wiring line intersect. A front face of the active matrix substrate on the liquid crystal layer side includes a plurality of first ridges overlapping the plurality of gate wiring lines and a plurality of second ridges overlapping the plurality of source wiring lines.

A display panel and a display device are provided. The display panel is provided with a first substrate, a second substrate, and a liquid crystal layer between the first substrate and the second substrate. The first substrate has a base, an array an array structure layer, and a pixel electrode layer. The pixel electrode layer has at least one pixel electrode, and each of the pixel electrode comprises a first region and a second region adjacent to the first region. A thickness of the liquid crystal layer corresponding to the first region is greater than a thickness of the liquid crystal layer corresponding to the second region.

Provided are an array substrate mother board, an array substrate, a display panel and a display device. The array substrate mother board includes array substrates, the array substrate includes a component disposing area; the array substrate includes a base substrate and a drive circuit layer, the drive circuit layer includes a first metal layer, and the first metal layer includes capacitor plates arranged in an array along the first direction and along the second direction; the plurality of array substrates include first-type array substrates, and the plurality of first-type array substrates are arranged along the first direction and are adjacent to a boundary extending along a first direction in the mother board of the array substrate.

According to one embodiment, a display device includes a first substrate and a second substrate. The first substrate includes a first switching element, a second switching element, a first organic insulating layer, a second organic insulating layer, a third organic insulating layer, a first connection electrode electrically connected to the first switching element, a second connection electrode electrically connected to the first connection electrode, a pixel electrode electrically connected to the second connection electrode, and a photoelectric conversion element electrically connected to the second switching element.

A display device includes: an array substrate; a counter substrate; a liquid crystal layer; and a light source. The array substrate includes: signal lines arranged in a first direction; scanning lines arranged in a second direction; switching elements coupled to the scanning lines and the signal lines; an organic insulating layer covering at least the switching elements; and a metal layer overlapping the organic insulating layer. A region surrounded by the scanning lines and the signal lines has a region having a thickness less than that of the organic insulating layer. The metal layer covers a first slant surface of the organic insulating layer on a side of the organic insulating layer closer to the light source than the switching element is, and a second slant surface of the organic insulating layer on a side of the organic insulating layer farther from the light source than the switching element is.