An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

A display device that is suitable for increasing in size is achieved. Three or more source lines are provided for each pixel column. Video signals having the same polarity are input to adjacent source lines during one frame period. Dot inversion driving is used to reduce a flicker, crosstalk, or the like.

The purpose of the present invention is to realize the TFT of the oxide semiconductor having a superior characteristics and high reliability during the product's life. The structure of the present invention is as follows. A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor, a first gate insulating film is formed on the first oxide semiconductor, the first gate insulating film is a laminated film of a first silicon oxide film and a first aluminum oxide film, a gate electrode is formed on the first aluminum film.

A display device can include a pixel driver disposed on a substrate; and a display element electrically connected with the pixel driver, in which the pixel driver includes a first thin film including a first semiconductor layer, a first gate electrode, at least a part of the first gate electrode overlapping with the first semiconductor layer, and a first source electrode and a first drain electrode respectively connected with the first semiconductor layer; and a second thin film including a second semiconductor layer, a second gate electrode, at least a part of the second gate electrode overlapping with the second semiconductor layer, and a second source electrode and a second drain electrode respectively connected with the second semiconductor layer, in which the first semiconductor layer and the second semiconductor layer are disposed in different layers, and the first source electrode, the first drain electrode, the second gate electrode, the second source electrode, and the second drain electrode are disposed in a same layer.

The present disclosure is related to a thin film transistor. The thin film transistor may include a gate pattern; an active layer pattern; a gate insulating layer between the gate pattern and the active layer pattern; a first conductive pattern including a first pattern part and a first connecting part; a second conductive pattern a second pattern part and a second connecting part; and a first intermediate insulating layer between the first pattern part and the second pattern part. The first conductive pattern and the second conductive pattern may be a source pattern and a drain pattern, respectively. A first through hole may be provided on the first intermediate insulating layer. The second conductive pattern may be connected to the active layer pattern through the second connecting part in the first through hole.

The present application discloses a display panel and a display device. The display panel includes: a substrate having a plurality of pixel regions; at least one active switch formed on the substrate; a transparent conductive layer electrically connected to the active switch; an Organic Light-Emitting Diode (OLED) formed on the transparent conductive layer; and a common electrode layer covering the OLED. The active switch includes a semiconductor layer. The semiconductor layer is made of a germanium-containing semiconductor material and has an electron mobility greater than 3 cm.sup.2/vs.

The purpose of the present invention is to decrease the resistance of the drain and source in the TFT of the oxide semiconductor as well as to have stable Vd-Id characteristics of the TFT. The structure of the present invention is as follows: A display device having plural pixels including thin film transistors (TFT) having oxide semiconductor films comprising: a gate insulating film formed on the oxide semiconductor film, an aluminum oxide film formed on the gate insulating film, a gate electrode formed on the aluminum oxide film, a side spacer formed on both sides of the gate electrode, and an interlayer insulating film formed on the gate electrode, the side spacer, a drain and a source, wherein in a plan view, and in a direction from the drain to the source, a length of the gate electrode is shorter than a length of the aluminum oxide film.

According to one embodiment, a display device includes first semiconductor layers crossing a first scanning line in a non-display area, the first semiconductor layers being a in number, second semiconductor layers crossing a second scanning line in the non-display area, the second semiconductor layers being b in number, and an insulating film disposed between the first and second semiconductor layers and the first and second scanning lines, wherein a and b are integers greater than or equal to 2, and a is different from b, and the first and second semiconductor layers are both entirely covered with the insulating film.

An active matrix substrate includes a first TFT having an oxide semiconductor layer formed from a first oxide semiconductor film and a second TFT having an oxide semiconductor layer formed from a second oxide semiconductor film. The oxide semiconductor layer of each TFT includes a high-resistance region including a channel region and offset regions and low-resistance regions including a source contact region, a drain contact region, and interposed regions. The first TFT has a gate insulating layer including a first insulating film and a second insulating film. The second TFT has a gate insulating layer including the second insulating film but not including the first insulating film. A total length L1 of the offset regions of the first TFT in a channel length direction is greater than a total length L2 of the offset regions of the second TFT in the channel length direction.

An array substrate and a display panel are disclosed, the array substrate includes a substrate, a light shielding layer, an insulation layer, and a metal layer. The array substrate has a first region being transparent and a second region being opaque. The metal layer includes a data line and a first touch wiring. The light shielding layer includes a second touch wiring coupled with the first touch wiring. At least one portion of the second touch wiring is disposed below a portion of the data line close to the first region.