An adaptive current mirror circuit for current shaping with temperature is disclosed. The adaptive current mirror includes a current generator circuit configured to receive and input current and generate an output current using the input current and an overdrive voltage. The adaptive current mirror further includes a compensation circuit configured to adjust a value of the overdrive voltage based on temperature.

A bandgap reference starting circuit with ultra-low power consumption includes a current generating unit and a first bias voltage generating unit respectively connected with a power supply voltage. The current generating unit generates an nA-level current and a starting voltage for the first bias voltage generating unit. The first bias voltage generating unit is started and generates a first bias voltage according to the starting voltage, and output the first bias voltage to a bandgap reference circuit to start up the bandgap reference circuit. The starting circuit can normally start up a bandgap reference circuit of nA level, and has an nA-level working current, thereby reducing power consumption and saving the cost.

A semiconductor integrated circuit device includes a current leakage detector, a leakage compensation pulse generator, and a leakage compensation voltage generator. The current leakage detector is configured to compare an internal voltage signal with a plurality of reference voltage signals with different levels to generate a current leakage state signal. The leakage compensation pulse generator is configured to generate a bias level compensation signal based on the current leakage state signal and a temperature state signal. The leakage compensation voltage generator is configured to generate the internal voltage signal based on the bias level compensation signal.

An electronic circuit includes a first transistor coupled between a first node and a supply voltage and controlled by a first node, a second transistor coupled between a second node and the supply voltage and controlled by the first node, a third transistor coupled between a third node and the supply voltage and controlled by a fourth node, a fourth transistor coupled between the fourth node and the supply voltage and controlled by the fourth node, a fifth transistor coupled between the first node and the fifth node and controlled by a reference voltage, a sixth transistor coupled between the second node and a ground and controlled by the third node, a seventh transistor coupled between the fourth node and the ground and controlled by the second node, a first resistor coupled the fourth node to the ground, and a second resistor coupled to the fifth node.

In an example, a system includes an amplifier configured to produce a bandgap voltage reference. The system also includes a current source configured to provide a current to bias the amplifier. The system includes a switching circuit configured to receive a first current replica signal and a second current replica signal, the switching circuit further configured to cause the current source to provide the current to bias the amplifier based on either the first current replica signal or the second current replica signal.

A Low Dropout Regulator (LDO) with Less Quiescent Current in the Dropout Region is described, including an error amplifier configured to compare a reference voltage to an LDO output voltage across a resistive divider, a current mirror configured to mirror a first output of the error amplifier to a first and second output of the current mirror, and a comparator configured to compare the LDO output voltage to a second output of the error amplifier, which has been compared to the second output of the current mirror, and configured to output a control voltage to the error amplifier, where a low quiescent current is maintained when an LDO input voltage is near or less than the LDO output voltage.

An amplifier circuit includes an amplifier and an output transistor. The amplifier is coupled to an output node of the output transistor for providing an output voltage to a load device. The amplifier circuit also includes a slew-rate control circuit coupled to a gate node of the output transistor and configured to control voltage rise of the gate node of the output transistor during power-up to reduce output voltage overshoot.

Disclosed is a low dropout linear voltage regulator and a control circuit thereof. The control circuit includes an error amplifier and a backflow prevention circuit, which compares an input voltage with an output voltage, to switch a substrate voltage and a voltage at a control terminal of the power transistor to a higher one of the input voltage and the output voltage, thus the power transistor and its parasitic diode can be turned off in time when the output voltage is greater than the input voltage, so as to prevent the power transistor from being damaged by current backflow and improve reliability of the low dropout linear regulator.

Systems and methods as described herein may take a variety of forms. In one example, systems and methods are provided for a circuit for powering a voltage regulator. A voltage regulator circuit has an output electrically coupled to a gate of an output driver transistor, the output driver transistor having a first terminal electrically coupled to a voltage source and a second terminal electrically coupled to a first terminal of a voltage divider, the voltage divider having an second terminal electrically coupled to ground, and the voltage divider having an output of a stepped down voltage. A power control circuitry transistor has a first terminal electrically coupled to the voltage source, the power control circuitry transistor having a second terminal electrically coupled to the gate terminal of the output driver transistor, and the power control circuitry transistor having a gate terminal electrically coupled to a status voltage signal.

A reference voltage circuit (1) includes a PTAT voltage generation circuit (20) that generates a voltage with a positive temperature coefficient, a CTAT voltage generation circuit (10) that generates a voltage with a negative temperature coefficient, and a temperature characteristic adjustment circuit (30) that generates a voltage for adjusting temperature characteristics. The reference voltage circuit outputs a reference voltage (VOUT) formed by calculation based on the output of the PTAT voltage generation circuit, output of the CTAT voltage generation circuit, and output of the temperature characteristic adjustment circuit.