A digital data processor includes an instruction memory storing instructions specifying a data processing operation and a data operand field, an instruction decoder coupled to the instruction memory for recalling instructions from the instruction memory and determining the operation and the data operand, and an operational unit coupled to a data register file and to an instruction decoder to perform a data processing operation upon an operand corresponding to an instruction decoded by the instruction decoder and storing results of the data processing operation. The operational unit is configured to perform a table write in response to a look up table initialization instruction by duplicating at least one data element from a source data register to create duplicated data elements, and writing the duplicated data elements to a specified location in a specified number of at least one table and a corresponding location in at least one other table.

A digital data processor includes an instruction memory storing instructions specifying a data processing operation and a data operand field, an instruction decoder coupled to the instruction memory for recalling instructions from the instruction memory and determining the operation and the data operand, and an operational unit coupled to a data register file and to an instruction decoder to perform a data processing operation upon an operand corresponding to an instruction decoded by the instruction decoder and storing results of the data processing operation. The operational unit is configured to perform a table write in response to a look up table initialization instruction by duplicating at least one data element from a source data register to create duplicated data elements, and writing the duplicated data elements to a specified location in a specified number of at least one table and a corresponding location in at least one other table.

A novel memory device is provided. The memory device includes a plurality of memory cells, and one memory cell includes a first transistor and a second transistor. One of a source and a drain of the first transistor is electrically connected to a gate of the second transistor through a node SN. Data written through the first transistor is retained at the node SN. When an OS transistor is used as the first transistor, formation of a storage capacitor is not needed. A region with a low dielectric constant is provided outside the memory cell, whereby noise from the outside is reduced and stable operation is achieved.

A novel memory device is provided. The memory device includes a plurality of memory cells, and one memory cell includes a first transistor and a second transistor. One of a source and a drain of the first transistor is electrically connected to a gate of the second transistor through a node SN. Data written through the first transistor is retained at the node SN. When an OS transistor is used as the first transistor, formation of a storage capacitor is not needed. A region with a low dielectric constant is provided outside the memory cell, whereby noise from the outside is reduced and stable operation is achieved.

An arbitration control circuit in a pseudo-static random access memory (PSRAM) device includes a first arbiter circuit and a second arbiter circuit. The first arbiter circuit receives a normal access request signal and a refresh access request signal and generates a first output signal in response to a logical operation to arbitrate between the normal access reqeuest signal and the refresh access request signal. The second arbiter circuit configured to receive the first output signal and a delayed signal of the first output signal, and to generate a second output signal in response to a logical operation of the first output signal and the delayed signal. The second output signal has a first logical state indicative of granting the read or write access request and a second logical state indicative of granting the refresh access request to the memory cells of the PSRAM device.

An arbitration control circuit in a pseudo-static random access memory (PSRAM) device includes a first arbiter circuit and a second arbiter circuit. The first arbiter circuit receives a normal access request signal and a refresh access request signal and generates a first output signal in response to a logical operation to arbitrate between the normal access reqeuest signal and the refresh access request signal. The second arbiter circuit configured to receive the first output signal and a delayed signal of the first output signal, and to generate a second output signal in response to a logical operation of the first output signal and the delayed signal. The second output signal has a first logical state indicative of granting the read or write access request and a second logical state indicative of granting the refresh access request to the memory cells of the PSRAM device.

Methods for reading a memory are provided. In response to a first address signal, a first signal is obtained according to first data of the memory and a second signal is obtained according to second data of the memory by a decoding circuit. Binary representation of the first signal is complementary to that of the second signal. A first sensing signal is provided according to a reference signal and the first signal and a second sensing signal is provided according to the reference signal and the second signal by a sensing circuit. An output corresponding to the first sensing signal or the second sensing signal is output in response to a control signal, by an output buffer.

The present disclosure includes apparatuses and methods related to an artificial intelligence accelerator in memory. An example apparatus can include a number of registers configured to enable the apparatus to operate in an artificial intelligence mode to perform artificial intelligence operations and an artificial intelligence (AI) accelerator configured to perform the artificial intelligence operations using the data stored in the number of memory arrays. The AI accelerator can include hardware, software, and or firmware that is configured to perform operations associated with AI operations. The hardware can include circuitry configured as an adder and/or multiplier to perform operations, such as logic operations, associated with AI operations.

This application is directed to a stacked semiconductor device assembly including a plurality of identical stacked integrated circuit (IC) devices. Each IC device further includes a master interface, a channel master circuit, a slave interface, a channel slave circuit, a memory core, and a modal pad configured to receive a selection signal for the IC device to communicate data using one of its channel master circuit or its channel slave circuit. In some implementations, the IC devices include a first IC device and one or more second IC devices. In accordance with the selection signal, the first IC device is configured to communicate read/write data via the channel master circuit of the first IC device, and each of the one or more second IC devices is configured to communicate respective read/write data via the channel slave circuit of the respective second IC device.

This application is directed to a stacked semiconductor device assembly including a plurality of identical stacked integrated circuit (IC) devices. Each IC device further includes a master interface, a channel master circuit, a slave interface, a channel slave circuit, a memory core, and a modal pad configured to receive a selection signal for the IC device to communicate data using one of its channel master circuit or its channel slave circuit. In some implementations, the IC devices include a first IC device and one or more second IC devices. In accordance with the selection signal, the first IC device is configured to communicate read/write data via the channel master circuit of the first IC device, and each of the one or more second IC devices is configured to communicate respective read/write data via the channel slave circuit of the respective second IC device.