Systems and methods for injecting a toggling signal in a command pipeline configured to receive a multiple command types for the memory device. Toggling circuitry is configured to inject the toggling signal into at least a portion of the command pipeline when the memory device is in a power saving mode and the command pipeline is clear of valid commands. The toggling is blocked from causing writes by disabling a data strobe when a command that is invalid in the power saving mode is asserted during the power saving mode.

A memory device includes pages arranged in columns and each constituted by a plurality of memory cells on a substrate, voltages applied to a first gate conductor layer, a second gate conductor layer, a first impurity layer, and a second impurity layer in each memory cell included in each of the pages are controlled to perform a page write operation of retaining, inside a channel semiconductor layer, a group of positive holes generated by an impact ionization phenomenon or by a gate-induced drain leakage current, and the voltages applied to the first gate conductor layer, the second gate conductor layer, the first impurity layer, and the second impurity layer are controlled to perform a page erase operation of discharging the group of positive holes from inside the channel semiconductor layer. The first impurity layer of the memory cell is connected to a source line, the second impurity layer thereof is connected to a bit line, one of the first gate conductor layer or the second gate conductor layer thereof is connected to a word line, and the other of the first gate conductor layer or the second gate conductor layer thereof is connected to a first driving control line. In a page read operation, page data in a group of memory cells selected by the word line is read to sense amplifier circuits, and in at least one operation among the page write operation, the page erase operation, and the page read operation, a voltage applied to at least one of the source line, the bit line, the word line, or the first driving control line is controlled by a reference voltage generating circuit combined with a temperature-compensating circuit.

An example embodiment includes an n-bit parallel pseudo-random binary sequence (PRBS) generator coupled to channelization circuitry to control the channelization circuitry to select from among a single channel n-bit output pattern from the PRBS generator and a number of multiple channel output patterns from the PRBS generator. The number of multiple channel output patterns can correspond to respective sub-patterns of the single channel n-bit output pattern.

After reading a 3D (three dimensional) NAND array, the wordlines of the 3D NAND array can be transitioned to ground in a staggered manner. The 3D NAND array includes a 3D stack with multiple wordlines vertically stacked, including a bottom-most wordline, a top-most wordline, and middle wordlines between the bottom-most wordline and the top-most wordline. A controller that controls the reading can set the multiple wordlines to a read voltage for reading operations and then transition a selected wordline of the multiple wordlines from the read voltage to ground prior to transitioning the other wordlines to ground. Thus, the controller will transition the other wordlines from the read voltage to ground after a delay.

After reading a 3D (three dimensional) NAND array, the wordlines of the 3D NAND array can be transitioned to ground in a staggered manner. The 3D NAND array includes a 3D stack with multiple wordlines vertically stacked, including a bottom-most wordline, a top-most wordline, and middle wordlines between the bottom-most wordline and the top-most wordline. A controller that controls the reading can set the multiple wordlines to a read voltage for reading operations and then transition a selected wordline of the multiple wordlines from the read voltage to ground prior to transitioning the other wordlines to ground. Thus, the controller will transition the other wordlines from the read voltage to ground after a delay.

The present disclosure includes apparatuses and methods related to modifying an operating mode in memory. An example apparatus can include a memory array and a controller coupled to the memory array, wherein the controller includes a register configured to receive a mode register write command and write a value indicative of an operating mode in which the apparatus has reduced power consumption relative to a normal operating mode.

The present disclosure includes apparatuses and methods related to modifying an operating mode in memory. An example apparatus can include a memory array and a controller coupled to the memory array, wherein the controller includes a register configured to receive a mode register write command and write a value indicative of an operating mode in which the apparatus has reduced power consumption relative to a normal operating mode.

A representative system, apparatus, method and protocol are disclosed for data communication between chiplets or SOCs on a common interposer. A representative system comprises: an interposer; a first integrated circuit arranged on the interposer, the first integrated circuit comprising a first common protocol interface circuit; a communication link coupled to the first common protocol interface circuit; and a second integrated circuit arranged on the interposer, the second integrated circuit comprising a second common protocol interface circuit coupled to the communication link to form a serial protocol interface between the first common protocol interface circuit and the second common protocol interface circuit. Serial data and control packets and parallel data and control packets having specified, ordered fields are also disclosed.

A representative system, apparatus, method and protocol are disclosed for data communication between chiplets or SOCs on a common interposer. A representative system comprises: an interposer; a first integrated circuit arranged on the interposer, the first integrated circuit comprising a first common protocol interface circuit; a communication link coupled to the first common protocol interface circuit; and a second integrated circuit arranged on the interposer, the second integrated circuit comprising a second common protocol interface circuit coupled to the communication link to form a serial protocol interface between the first common protocol interface circuit and the second common protocol interface circuit. Serial data and control packets and parallel data and control packets having specified, ordered fields are also disclosed.

A digital data processor includes an instruction memory storing instructions specifying data processing operations and a data operand field, an instruction decoder coupled to the instruction memory for recalling instructions from the instruction memory and determining the operation and the data operand, and an operational unit coupled to a data register file and an instruction decoder to perform an operation upon an operand corresponding to an instruction decoded by the instruction decoder and storing results of the operation. The operational unit is configured to perform a table recall in response to a look up table read instruction by recalling data elements from a specified location and adjacent location to the specified location, in a specified number of at least one table and storing the recalled data elements in successive slots in a destination register. Recalled data elements include at least one interpolated data element in the adjacent location.