A digital data processor includes an instruction memory storing instructions specifying data processing operations and a data operand field, an instruction decoder coupled to the instruction memory for recalling instructions from the instruction memory and determining the operation and the data operand, and an operational unit coupled to a data register file and an instruction decoder to perform an operation upon an operand corresponding to an instruction decoded by the instruction decoder and storing results of the operation. The operational unit is configured to perform a table recall in response to a look up table read instruction by recalling data elements from a specified location and adjacent location to the specified location, in a specified number of at least one table and storing the recalled data elements in successive slots in a destination register. Recalled data elements include at least one interpolated data element in the adjacent location.

A first set of memory access operations is performed at a memory sub-system based on first operation settings that are configured based on a first operating environment of a host system. A detection is made that the host system is operating in a second operating environment that is different from the first operating environment. A level of impact that each operating requirement of a set of operating requirements of the memory sub-system has on a performance of the memory sub-system in view of the second operating environment. A second set of memory access operations is determined based on a respective priority for each operating requirement of the set of operating requirements. A second set of memory access operations is performed at the memory sub-system based on the second set of memory access operation settings.

A first set of memory access operations is performed at a memory sub-system based on first operation settings that are configured based on a first operating environment of a host system. A detection is made that the host system is operating in a second operating environment that is different from the first operating environment. A level of impact that each operating requirement of a set of operating requirements of the memory sub-system has on a performance of the memory sub-system in view of the second operating environment. A second set of memory access operations is determined based on a respective priority for each operating requirement of the set of operating requirements. A second set of memory access operations is performed at the memory sub-system based on the second set of memory access operation settings.

Methods, systems, and devices for distribution-following access operations for a memory device are described. In an example, the described techniques may include identifying an activation of a first memory cell at a first condition of a biasing operation, and identifying an activation of a second memory cell at a second condition of the biasing operation, and determining a parameter of an access operation based at least in part on a difference between the first condition and the second condition. In some examples, the memory cells may be associated with a configurable material element, such as a chalcogenide material, that stores a logic state based on a material property of the material element. In some examples, the described techniques may at least partially compensate for a change in memory material properties due to aging or other degradation or changes over time.

Methods, systems, and devices for distribution-following access operations for a memory device are described. In an example, the described techniques may include identifying an activation of a first memory cell at a first condition of a biasing operation, and identifying an activation of a second memory cell at a second condition of the biasing operation, and determining a parameter of an access operation based at least in part on a difference between the first condition and the second condition. In some examples, the memory cells may be associated with a configurable material element, such as a chalcogenide material, that stores a logic state based on a material property of the material element. In some examples, the described techniques may at least partially compensate for a change in memory material properties due to aging or other degradation or changes over time.

Apparatuses and methods for writing data to a memory array are disclosed. When data is duplicative across multiple data lines, data may be transferred across a single line of a bus rather than driving the duplicative data across all of the data lines. The data from the single data line may be provided to the write amplifiers of the additional data lines to provide the data from all of the data lines to be written to the memory. In some examples, error correction may be performed on data from the single data line rather than all of the data lines.

Apparatuses and methods for writing data to a memory array are disclosed. When data is duplicative across multiple data lines, data may be transferred across a single line of a bus rather than driving the duplicative data across all of the data lines. The data from the single data line may be provided to the write amplifiers of the additional data lines to provide the data from all of the data lines to be written to the memory. In some examples, error correction may be performed on data from the single data line rather than all of the data lines.

A memory device includes: first power pins in a first power area and configured to receive a first power voltage; data pins configured to transmit or receive data signals, the data pins being arranged in a first region and in a second region each including the first power area; control pins configured to transmit or receive control signals in the first region and in the second region; second power pins in a second power area between the first region and the second region and configured to receive a second power voltage different from the first power voltage; and ground pins in the second power area and configured to receive a ground voltage.

A memory device includes: first power pins in a first power area and configured to receive a first power voltage; data pins configured to transmit or receive data signals, the data pins being arranged in a first region and in a second region each including the first power area; control pins configured to transmit or receive control signals in the first region and in the second region; second power pins in a second power area between the first region and the second region and configured to receive a second power voltage different from the first power voltage; and ground pins in the second power area and configured to receive a ground voltage.

Some embodiments include apparatuses and methods of operating such apparatuses. One of such apparatuses includes a data line, a conductive region, and a memory cell including a first transistor and a second transistor. The first transistor includes a first channel region coupled to the data line and the conductive region, a charge storage structure, and a first gate. The second transistor includes a second channel region coupled to the data line and the charge storage structure, and a second gate. The first gate is electrically separated from the second gate and opposite from the second gate in a direction from the first channel region to the second channel region.