A semiconductor device is provided. The semiconductor device includes a substrate which includes a cell region including first and second regions, and a peri region more adjacent to the second region than adjacent to the first region, first and second lower electrodes disposed in the first and second regions, respectively, first and second lower support patterns disposed on outer walls of the first and second lower electrodes, respectively, an upper support pattern disposed on outer walls of the first and second lower electrodes, and being on and spaced apart from the first and second lower support patterns, a dielectric layer disposed on surfaces of the first and second lower electrodes, the first and second lower support patterns, and the upper support pattern, and an upper electrode disposed on a surface of the dielectric layer, wherein thickness of the first lower support pattern is smaller than thickness of the second lower support pattern.

A semiconductor device is provided. The semiconductor device includes a substrate which includes a cell region including first and second regions, and a peri region more adjacent to the second region than adjacent to the first region, first and second lower electrodes disposed in the first and second regions, respectively, first and second lower support patterns disposed on outer walls of the first and second lower electrodes, respectively, an upper support pattern disposed on outer walls of the first and second lower electrodes, and being on and spaced apart from the first and second lower support patterns, a dielectric layer disposed on surfaces of the first and second lower electrodes, the first and second lower support patterns, and the upper support pattern, and an upper electrode disposed on a surface of the dielectric layer, wherein thickness of the first lower support pattern is smaller than thickness of the second lower support pattern.

A semiconductor memory device includes a memory cell array including first memory cells and second memory cell, and a peripheral circuit. When a first command, a first address, and first input data are received, the peripheral circuit reads first data from the first memory cells based on the first address in response to the first command, performs a first operation by using the first data and the first input data, and reads second data from the second memory cells by using a result of the first operation.

Systems and methods for providing a non-rewritable code comparator using a memristor and a serial resistor are disclosed. An example apparatus comprises: a plurality of first terminals; a plurality of second terminals; and a plurality of two-terminal device pairs formed between the plurality of first terminals and the plurality of second terminals. Each two-terminal device pair in the plurality of two-terminal device pairs include at least one memristor and at least one resistor; each two-terminal device pair is configured to be switched to a subsequent state once and only once. In some implementations, a two-terminal device pair is configured to remain in the subsequent state regardless of whether an input signal to the apparatus matches a reference signal to the apparatus.

Systems and methods for providing a non-rewritable code comparator using a memristor and a serial resistor are disclosed. An example apparatus comprises: a plurality of first terminals; a plurality of second terminals; and a plurality of two-terminal device pairs formed between the plurality of first terminals and the plurality of second terminals. Each two-terminal device pair in the plurality of two-terminal device pairs include at least one memristor and at least one resistor; each two-terminal device pair is configured to be switched to a subsequent state once and only once. In some implementations, a two-terminal device pair is configured to remain in the subsequent state regardless of whether an input signal to the apparatus matches a reference signal to the apparatus.

Systems and method are provided for a memory circuit that includes a bit cell responsive to a bit line signal line and a bit line bar signal line configured to store a bit of data. A pre-charge circuit is configured to charge one of the bit line and bit line bar signal lines prior to a read operation, where the pre-charge circuit includes a first pre-charge component and a second pre-charge component, the first and second pre-charge components being individually controllable for charging the bit line and bit line bar signal lines.

Systems and method are provided for a memory circuit that includes a bit cell responsive to a bit line signal line and a bit line bar signal line configured to store a bit of data. A pre-charge circuit is configured to charge one of the bit line and bit line bar signal lines prior to a read operation, where the pre-charge circuit includes a first pre-charge component and a second pre-charge component, the first and second pre-charge components being individually controllable for charging the bit line and bit line bar signal lines.

According to one embodiment, a semiconductor memory device that includes a first bitline, a second bitline, a clock generator and a timing control circuit. The clock generator is configured to generate a first clock signal that rises in synchronization with a basic clock signal and determine a timing in which the first bitline and the second bitline are connected. The timing control circuit is configured to generate a control signal that controls a timing of a read operation in synchronization with the first clock signal, an apparatus includes

A semiconductor integrated circuit according to an embodiment includes: a first memory bank that performing a read operation and outputting first data in accordance with a first clock signal; a second memory bank performing a read operation and outputting second data in accordance with the first clock signal; a configurable decoder supplying address information to the first and second memory banks; and an output module reconfigurable in one of a first and second modes, the first mode including a function of holding the first and second data in accordance with the first clock signal, and selecting and outputting the first data or the second data in accordance with a second clock signal having a frequency at least twice higher than the first clock signal, the second mode including a function of selecting and outputting the first data or the second data in accordance with the first clock signal.

A semiconductor integrated circuit according to an embodiment includes: a first memory bank that performing a read operation and outputting first data in accordance with a first clock signal; a second memory bank performing a read operation and outputting second data in accordance with the first clock signal; a configurable decoder supplying address information to the first and second memory banks; and an output module reconfigurable in one of a first and second modes, the first mode including a function of holding the first and second data in accordance with the first clock signal, and selecting and outputting the first data or the second data in accordance with a second clock signal having a frequency at least twice higher than the first clock signal, the second mode including a function of selecting and outputting the first data or the second data in accordance with the first clock signal.