Systems, methods, and apparatus for practical realization of a current source with a programmable temperature profile are described. The temperature profile can include profile segments with different programmable slopes. Programmable slopes of any one of the profile segments can be according to any of a ZTAT, PTAT and CTAT profiles. When integrated in an electronic device, the programmable temperature profile can be used statically with a pre-programmed configuration and optionally fused profile, or dynamically to control a performance of the electronic device via adjustments of the temperature profile.

There is provided a reference voltage generator for providing an adaptive voltage. The reference voltage generator includes a steady current source and a PMOS transistor and an NMOS transistor cascaded to each other. A reference voltage provided by the reference voltage generator is determined by gate-source voltages of the PMOS transistor and the NMOS transistor. As said gate-source voltages vary with the temperature and manufacturing process, the reference voltage forms a self-adaptive voltage.

Apparatuses and methods for providing a current independent of temperature are described. An example apparatus includes a current generator that includes two components that are configured to respond equally and opposite to changes in temperature. The responses of the two components may allow a current provided by the current generator to remain independent of temperature. One of the two components in the current generator may mirror a component included in a voltage source that is configured to provide a voltage to the current generator.

An apparatus includes a first circuit and a second circuit. The first circuit may be configured to generate (i) a variable current and (ii) a constant current. The variable current may be proportional to a temperature of the first circuit. The second circuit may be configured to present a resistance through a plurality of first transistors between two ports in response to both the variable current and the constant current. The resistance may have a predefined dependence on the temperature.

A differential amplifier circuit includes: a control current source supplying a control current; paired bipolar transistors; an a variable resistance circuit including: a series circuit of a first resistor and a second resistor having an identical resistance, the series circuit electrically connected between a first terminal and a second terminal of the variable resistance circuit; a first field effect transistor (FET) having a source and a drain being electrically connected to emitters of the paired bipolar transistors, respectively; and a second FET having a drain, a gate being electrically connected to the drain thereof, the gate of the first FET, and a control terminal of variable resistance circuit, a source being electrically connected to a connection node between the first resistor and the second resistor, wherein the control current source adjusts the control current to allow transconductance of the second FET to be kept constant.

An oscillator circuit includes a first current generator circuit that generates a current complementary to absolute temperature and a second current generator that generates a current proportional to absolute temperature. A temperature slope control circuit adjusts slopes of the current complementary to absolute temperature and the current proportional to absolute temperature in a complementary fashion and adds the current complementary to absolute temperature to the current proportional to absolute temperature after slope control to produce a temperature independent current. A current control circuit adjusts magnitude of the temperature independent current to produce a magnitude adjusted temperature independent current. A current controlled oscillator generates an output signal as a function of the magnitude adjusted temperature independent current.

A power supply system for USB Power Delivery includes a current source drive circuit to control a power FET to regulate the supply of power along a power path. The current source drive circuit includes a cascode current source and a cascode protection circuit formed by a source follower and a feedback voltage divider. The source follower can be a transistor with its gate connected to a cascode node between upper- and lower-stage transistors of the cascode current source. The divider node of the voltage divider is connected to the gate of the lower-stage transistor. The current source drive circuit can operate within the gate-source voltage specifications of 30-volt DEPMOS devices, and can provide high output impedance to the gate of power FET and a current limit circuit during current limiting operation, without requiring an extra high-voltage mask during fabrication.

A semiconductor device that can perform voltage monitoring with a small circuit area is provided. The resistive subdivision circuit RDIV performs the resistive subdivision of the input voltage Vin by means of the input ladder resistor (R1-R4), and drives the nMOS transistors MN1-MN3 by the subdivided input voltages Vi1-Vi3 each having different resistive subdivision ratios, respectively. The pMOS transistor MP0 is provided in common for the pMOS transistors MP1-MP3, and configures a current mirror circuit with each of the pMOS transistors MP1-MP3. The bias current generating circuit IBSG supplies a bias current to the pMOS transistor MP1.

This invention aims at providing a temperature characteristic adjustment circuit capable of adjusting the temperature characteristic to various positive and negative temperature characteristics with an excessively small characteristic variation and capable of suppressing an increase in the chip area and the current consumption with a simple circuit configuration. A temperature characteristic adjustment circuit has a current source having a nonvolatile storage element having a control gate region and a source region and driven by the application of a bias between the control gate region and the source region and an output circuit not having a nonvolatile storage element, in which the temperature dependency of an output signal originating from the temperature dependency of the current amount of a current output from the current source is adjusted by the nonvolatile storage element.

An oscillation circuit small in circuit scale and in the influence of temperature on its oscillation frequency is provided. The oscillation circuit includes: a constant current circuit configured to supply a current based on a first depletion MOS transistor; a charge/discharge circuit having a first capacitor, a second capacitor, a second depletion MOS transistor, and a third depletion MOS transistor provided in a current path for charging the second capacitor, the first to third depletion MOS transistors having the same threshold voltage and the same temperature characteristics of the threshold voltage; and an RS latch circuit configured to output a waveform that falls by input of the reset signal and rises by input of the set signal.