G05F3/245

Temperature sensor using proportional to absolute temperature sensing and complementary to absolute temperature sensing and electronic device including the same

An electronic device may include first through fourth current generators. The first current generator may be configured to output first and second mirroring currents. The second current generator may be configured to output third and fourth mirroring currents. The third current generator may be configured to generate a fifth mirroring current having a current slope proportional to a current slope of the first mirroring current and output a first current having a level of a value obtained by subtracting a level of the fifth mirroring current from a level of the second mirroring current. The fourth current generator may be configured to generate a sixth mirroring current having a current slope proportional to a current slope of the fourth mirroring current and output a second current having a level of a value obtained by subtracting a level of the sixth mirroring current from a level of the third mirroring current.

Reference voltage generator with adaptive voltage and integrated circuit chip
10193444 · 2019-01-29 · ·

There is provided a reference voltage generator for providing an adaptive voltage. The reference voltage generator includes a steady current source and a PMOS transistor and an NMOS transistor cascaded to each other. A reference voltage provided by the reference voltage generator is determined by gate-source voltages of the PMOS transistor and the NMOS transistor. As said gate-source voltages vary with the temperature and manufacturing process, the reference voltage forms a self-adaptive voltage.

APPARATUSES AND METHODS FOR TEMPERATURE INDEPENDENT CURRENT GENERATIONS
20180341282 · 2018-11-29 · ·

Apparatuses and methods for providing a current independent of temperature are described. An example apparatus includes a current generator that includes two components that are configured to respond equally and opposite to changes in temperature. The responses of the two components may allow a current provided by the current generator to remain independent of temperature. One of the two components in the current generator may mirror a component included in a voltage source that is configured to provide a voltage to the current generator.

Circuit and method for biasing nonvolatile memory cells

A circuit for biasing non-volatile memory cells includes a dummy decoding path between a global bias line and a biasing node, a reference current generator coupled to the dummy decoding path and configured to supply a reference current, a biasing stage configured to set a cell bias voltage on the biasing node, and a compensation stage configured to compensate a current absorption of the biasing stage at the biasing node so that the reference current will flow through the dummy decoding path.

CURRENT REFERENCE CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING THE SAME
20180284831 · 2018-10-04 ·

A current reference circuit and a semiconductor IC including the current reference circuit, the current reference circuit including a proportional to absolute temperature (PTAT) current generator configured to generate, in an output branch, a first current proportional to a temperature; and a current subtractor configured to generate a reference current by subtracting a second current generated based on a current flowing in an internal branch of the PTAT current generator, from the first current flowing in the output branch. The second current is set to have a same temperature-based change characteristic as the first current and a level different from a level of the first current.

NONVOLATILE STORAGE ELEMENT AND REFERENCE VOLTAGE GENERATION CIRCUIT

To provide a nonvolatile storage element capable of being formed by an ordinary CMOS process using single layer polysilicon without requiring exclusive forming process and a reference voltage generation circuit with high versatility and high precision. A reference voltage generation circuit includes nonvolatile storage elements formed of single layer polysilicon. The nonvolatile storage elements each include a MOS transistor including a floating gate, a MOS transistor including a floating gate, and a MOS transistor including a floating gate.

VOLTAGE REFERENCE CIRCUIT AND POWER SUPPLY CIRCUIT BASED ON SAME
20240338044 · 2024-10-10 ·

An integrated circuit includes a first temperature-sensitive device configured to generate a first voltage, a second temperature-sensitive device configured to generate a second voltage, and an output terminal configured to generate a reference voltage which is a summation of the first voltage and the second voltage. The first voltage monotonically increases with an absolute temperature. The second voltage monotonically decreases with the absolute temperature. In the integrated circuit, a low-dropout regulator has a first input connected to the output terminal and an output connected to the gate of a power regulating transistor. The channel of the power regulating transistor is connected between a first terminal configured to receive a first supply voltage and a second terminal configured to generate a second supply voltage.

Bandgap reference circuit with capacitive bias
10073483 · 2018-09-11 · ·

An apparatus is described having a reference voltage circuit. The reference voltage circuit includes a diode to receive first and second currents having first and second respective current densities, where, the first and second current densities are different and determined by circuitry that precisely controls the respective amount of time the first and second currents flow into the diode. The reference voltage circuit also comprises circuitry to form a reference voltage by combining first and second voltages generated from respective voltages of the diode that result from the first and second currents flowing through the diode.

Apparatuses and methods for temperature independent current generations
10073477 · 2018-09-11 · ·

Apparatuses and methods for providing a current independent of temperature are described. An example apparatus includes a current generator that includes two components that are configured to respond equally and opposite to changes in temperature. The responses of the two components may allow a current provided by the current generator to remain independent of temperature. One of the two components in the current generator may mirror a component included in a voltage source that is configured to provide a voltage to the current generator.

Piecewise Correction of Errors Over Temperature without Using On-Chip Temperature Sensor/Comparators
20180239383 · 2018-08-23 ·

A temperature dependent correction circuit includes a first supply source, a second supply source, a rectifying circuit, and a reference. The first supply source is configured to supply a first signal that varies with temperature along a first constant or continuously variable slope. The second supply source is configured to supply a second signal that varies with temperature along a second constant or continuously variable slope. The rectifying circuit is configured to receive the first and second signal, rectify the first signal to produce a first rectified signal, and add the first rectified signal to the second signal to produce a correction signal. The reference is configured to receive the correction signal.