A current generation circuit including a first and a second bipolar transistors, a current distribution circuit that makes a first current and a second current flow through the first and second bipolar transistors, respectively, the first current and the second current corresponding to a first control voltage, a first NMOS transistor disposed between the first bipolar transistor and the first current distribution circuit, a second NMOS transistor disposed between the second bipolar transistor and the first current distribution circuit, a first resistive element, a first operational amplifier that outputs the second control voltage to the gates of the first and the second NMOS transistors according to a drain voltage of the first NMOS transistor and a reference bias voltage, and a second operational amplifier that generates the first control voltage according to a drain voltage of the second NMOS transistor and the reference bias voltage.

Techniques and circuitry are presented for more rapidly and accurately obtaining a temperature code (TCO) on an integrated circuit. A comparison voltage is ramped up and two counts are determined concurrently, a first count on how many clock cycles for the comparison voltage to ramp up from a low reference voltage to a proportional to absolute temperature (PTAT) and a second count for the number of clock cycles for the comparison voltage to go from the low reference voltage to a high reference voltage. The TCO value is then obtained by using the second count in a post-processing calibration to adjust the first count. An initial calibration can also be included when the circuit is powered up.

An electronic device and an integrated circuit thereof are provided. The integrated circuit includes a voltage generator and a current generator with a negative temperature coefficient. The voltage generator generates a reference voltage proportional to an absolute temperature based on a predetermined value. The current generator with the negative temperature coefficient receives the reference voltage and generates a reference current based on the reference voltage.

A sensor that can provide multiple resolutions, based on the output of the same analog-to-digital converter is disclosed. Some applications require a fast measurement of a physical parameter (e.g., temperature, voltage, pressure), but can tolerate a lower resolution measurement. Other applications require a higher resolution measurement, but can tolerate a slower measurement. The sensor may comprise a sigma delta modulator (SDM) ADC that outputs a digital reading. The output may comprise a bus having a width that is equal to the desired highest resolution of the digital code for the physical parameter. The sensor may further comprise a storage unit for each desired level of resolution. The sensor may further comprise logic that causes the storage units to sample the output bus after a certain number of clock cycles in order to store a digital code having a number of bits equal to the resolution.

A temperature sensor circuit has a reference voltage generator that is trimmable at two temperatures for increased accuracy. The reference voltage generation section generates a reference voltage, the level of which is trimmable. A voltage divider section is connected to receive the reference voltage from the reference voltage generation section and generate a plurality of comparison voltage levels determined by the reference voltage and a trimmable resistance. An analog-to-digital converter can then be connected to a temperature dependent voltage section to receive the temperature dependent output voltage, such as a proportional to absolute temperature type (PTAT) behavior, and connected to the voltage divider section to receive the comparison voltage levels. The analog to digital converter generates an output indicative of the temperature based upon a comparison of the temperature dependent output voltage to the comparison voltage levels.

An apparatus and method for generating a temperature-compensated reference voltage are disclosed. The apparatus generates substantially equal temperature-compensated currents by controlling (through negative feedback) voltages across separate resistors through which the currents flow, respectively. Two of the temperature-compensated currents are formed by combining (e.g., summing) a complementary to absolute temperature (CTAT) current (I.sub.CTAT) and a proportional to absolute temperature (PTAT) current (I.sub.PTAT). A reference voltage V.sub.REF is produced by configuring the other the temperature-compensated current to flow through an output resistor.

A current generation circuit including a first and a second bipolar transistors, a current distribution circuit that makes a first current and a second current flow through the first and second bipolar transistors, respectively, the first current and the second current corresponding to a first control voltage, a first NMOS transistor disposed between the first bipolar transistor and the first current distribution circuit, a second NMOS transistor disposed between the second bipolar transistor and the first current distribution circuit, a first resistive element, a first operational amplifier that outputs the second control voltage to the gates of the first and the second NMOS transistors according to a drain voltage of the first NMOS transistor and a reference bias voltage, and a second operational amplifier that generates the first control voltage according to a drain voltage of the second NMOS transistor and the reference bias voltage.

A PVT calibration system of an electronic device may select a temperature band of a plurality of temperature bands based on a detected device temperature. A comparator of the calibration system may compare a process characterization voltage with one or both of an upper bound level and a lower bound level of a reference voltage band associated with the selected temperature band. Based on the comparison, the PVT calibration system may identify a process characterization of the electronic device. The PVT calibration system may use the identification, along with identified device temperature and supply voltage levels to calibrate an impedance of I/O driver circuitry of the electronic device.

An environmental sensor implementing a sleep mode timer with an oscillator circuit suitable for low power applications is presented. The oscillator circuit includes a plurality of timer stages cascaded in series with each other. Each timer circuit includes a plurality of transistors and operates to output two voltages with opposite polarities, such that the polarities of the two voltages oscillate periodically based on leakage current in the plurality of transistors. Each timer circuit further includes one or more tuning transistors that operate to adjust a frequency at which the polarities of the voltages oscillate. A complementary-to-absolute temperature (CTAT) voltage generator is configured to receive a regulated voltage and supply a bias voltage to the one or more tuning transistors in each of the plurality of timer circuits, where the CTAT voltage generator adjusts the bias voltage linearly and inversely with changes in temperature.

A circuit includes a divider circuit block configured to generate a trim term signal (VBG_TRIM) that is temperature and process independent. The circuit further includes a processing circuit block configured to multiply a temperature dependent reference voltage signal (TAP_GG) by a factor, and to sum the trim term signal with a result of the multiplication to generate an output reference voltage (VGG).