A semiconductor memory apparatus includes an address generation circuit and an operation determination circuit. The address generation circuit generates a refresh target address that corresponds to a word line, among a plurality of word lines, the word line being adjacent to another word line in which row hammering has occurred. The operation determination circuit configured to generate an address matching information by comparing a row hammering address with the refresh target address.

A flash memory die includes (i) a first subset of planes including blocks of flash memory cells connected to a first number of word line layers and a plurality of bit lines having a first length, (ii) a second subset of planes including blocks of flash memory cells connected to a second number of word line layers less than the first number of word line layers and a plurality of bit lines having a second length shorter than the first length, (iii) first peripheral circuitry implemented underneath the first subset of planes and including first sense amplifier circuitry and first peripheral control circuitry connected to the first subset of planes, and second peripheral control circuitry connected to the second subset of planes, and (iv) second peripheral circuitry implemented underneath the second subset of planes and including second sense amplifier circuitry connected to the second subset of planes.

A memory module includes a substrate, plural memory devices, and a buffer. The plural memory devices are organized into at least one rank, each memory device having plural banks. The buffer includes a primary interface for communicating with a memory controller and a secondary interface coupled to the plural memory devices. For each bank of each rank of memory devices, the buffer includes data buffer circuitry and address buffer circuitry. The data buffer circuitry includes first storage to store write data transferred during a bank cycle interval (tRR). The address buffer circuitry includes second storage to store address information corresponding to the data stored in the first storage.

An example memory sub-system includes: a plurality bank groups, wherein each bank group comprises a plurality of memory banks; a plurality of row buffers, wherein two or more row buffers of the plurality of row buffers are associated with each bank group; and a processing logic communicatively coupled to the plurality of bank groups and the plurality of row buffers, the processing logic to perform operations comprising: receiving, from a host, a command identifying a row buffer of the plurality of row buffers; and perform an operation with respect to the identified row buffer.

A semiconductor device includes an information update control circuit configured to generate a self-read pulse for a self-read operation, a self-write pulse for a self-write operation, and an information update section signal that is activated during an information update section when an active operation is performed, and a column control circuit configured to receive the self-read pulse and the self-write pulse, to generate a read column strobe pulse for outputting data or selection information data stored in a core circuit when the self-read operation is performed based on the self-read pulse or the read operation is performed according to the read pulse, and to generate a write column strobe pulse for storing the data or the selection information data in the core circuit when the self-write operation is performed based on the self-write pulse or the write operation is performed according to the write pulse.

The present disclosure includes apparatuses and methods for performing operations by a memory device in a self-refresh state. An example includes an array of memory cells and a controller coupled to the array of memory cells. The controller is configured to direct performance of compute operations on data stored in the array when the array is in a self-refresh state.

A memory system including a first central processing unit, a first memory module connected to the first central processing unit by a first channel, a second memory module connected to the first central processing unit by a second channel, and a third memory module connected to the first central processing unit by a third channel may be provided. Each of the first memory module, the second memory module, and the third memory module may be configured to write the same data in a data area thereof and a mirroring data area thereof in response to an address in a mirroring mode.

A search pattern is generated based on an input search word comprising a first sequence of bits. The search pattern comprises a representation of the input search word and a representation of an inverse of the input search word. The search pattern is provided as input to search lines of a ternary content-addressable memory (TCAM) block. A subset of the search lines is set to a logical high state based on a first portion of the input search word being designated as don't-care bits. The search pattern causes at least one string in the CAM block to be conductive and provide a signal in response to a data entry stored on the string comprising a second portion of the input search word that excludes the don't-care bits. A location of the data entry is determined and output.

Apparatuses, systems, and methods for reset of row hammer detector circuits. A row hammer detector circuit includes a hash circuit configured to store a hash key and provide a first count value based on a hash between the hash key and a row address corresponding to a row of memory cells of a memory array. The row hammer detector circuit is configured to provide a match signal in response to the count value exceeding a threshold to cause a targeted refresh of a victim row adjacent the row of memory cells. In response to exit from a self-refresh mode, the hash circuit is configured to update the stored hash key with a new hash key.

An arithmetic device includes an auto-command/address generation circuit, a first data storage circuit, and a second data storage circuit. The auto-command/address generation circuit generates an auto-load selection signal that activates an auto-load operation based on a level of a power source voltage. In addition, the auto-command/address generation circuit generates an auto-load command for the auto-load operation. The first data storage circuit outputs look-up table data, to which an activation function is applied, based on the auto-load command. The second data storage circuit stores the look-up table data, output from the first data storage circuit, based on the auto-load command.