A sense amplifier includes a sense amplifying unit, first and second isolation units, and first and second offset cancellation unit. The sense amplifying unit includes a first P-type metal-oxide-semiconductor (PMOS) transistor, a second PMOS transistor, a first N-type metal-oxide-semiconductor (NMOS) transistor, and a second NMOS transistor. In a layout of the sense amplifier, the first and second PMOS transistors are disposed in a central region of the sense amplifier, the first and second NMOS transistors are disposed at opposite sides of the sense amplifier from each other, the first isolation unit and the first offset cancellation unit are disposed between the first PMOS transistor and the first NMOS transistor, and the second isolation unit and the second offset cancellation unit are disposed between the second PMOS transistor and the second NMOS transistor. In other layouts, the locations of the PMOS transistors and NMOS transistors may be reversed.

Systems, apparatuses, and methods related to bit string operations in memory are described. The bit string operations may be performed within a memory array without transferring the bit strings or intermediate results of the operations to circuitry external to the memory array. For instance, sensing circuitry that can include a sense amplifier and a compute component can be coupled to a memory array. A controller can be coupled to the sensing circuitry and can be configured to cause one or more bit strings that are formatted according to a universal number format or a posit format to be transferred from the memory array to the sensing circuitry. The sensing circuitry can perform an arithmetic operation, a logical operation, or both using the one or more bit strings.

The present disclosure includes apparatuses and methods for compute enabled cache. An example apparatus comprises a compute component, a memory and a controller coupled to the memory. The controller configured to operate on a block select and a subrow select as metadata to a cache line to control placement of the cache line in the memory to allow for a compute enabled cache.

The present disclosure includes apparatuses and methods for compute enabled cache. An example apparatus comprises a compute component, a memory and a controller coupled to the memory. The controller configured to operate on a block select and a subrow select as metadata to a cache line to control placement of the cache line in the memory to allow for a compute enabled cache.

The present disclosure includes apparatuses and methods for data movement. An example apparatus includes a memory device that includes a plurality of subarrays of memory cells and sensing circuitry coupled to the plurality of subarrays. The sensing circuitry includes a sense amplifier and a compute component. The memory device also includes a plurality of subarray controllers. Each subarray controller of the plurality of subarray controllers is coupled to a respective subarray of the plurality of subarrays and is configured to direct performance of an operation with respect to data stored in the respective subarray of the plurality of subarrays. The memory device is configured to move a data value corresponding to a result of an operation with respect to data stored in a first subarray of the plurality of subarrays to a memory cell in a second subarray of the plurality of subarrays.

The present disclosure includes apparatuses and methods for data movement. An example apparatus includes a memory device that includes a plurality of subarrays of memory cells and sensing circuitry coupled to the plurality of subarrays. The sensing circuitry includes a sense amplifier and a compute component. The memory device also includes a plurality of subarray controllers. Each subarray controller of the plurality of subarray controllers is coupled to a respective subarray of the plurality of subarrays and is configured to direct performance of an operation with respect to data stored in the respective subarray of the plurality of subarrays. The memory device is configured to move a data value corresponding to a result of an operation with respect to data stored in a first subarray of the plurality of subarrays to a memory cell in a second subarray of the plurality of subarrays.

An edge memory array mat with access lines that are split, and a bank of sense amplifiers formed under the edge memory array may in a region that separates the access line segment halves. The sense amplifiers of the bank of sense amplifiers are coupled to opposing ends of a first subset of the half access lines pairs. The edge memory array mat further includes access line connectors configured to connect a second subset of the half access line pairs across the region occupied by the bank of sense amplifiers to form combined or extended access lines that extend to a bank of sense amplifiers coupled between the edge memory array mat and an inner memory array mat.

An edge memory array mat with access lines that are split, and a bank of sense amplifiers formed under the edge memory array may in a region that separates the access line segment halves. The sense amplifiers of the bank of sense amplifiers are coupled to opposing ends of a first subset of the half access lines pairs. The edge memory array mat further includes access line connectors configured to connect a second subset of the half access line pairs across the region occupied by the bank of sense amplifiers to form combined or extended access lines that extend to a bank of sense amplifiers coupled between the edge memory array mat and an inner memory array mat.

Methods, systems, and devices for a source follower-based sensing architecture and sensing scheme are described. In one example, a memory device may include a sense circuit that includes two source followers that are coupled to each other and to a sense amplifier. A method of operating the memory device may include transferring a digit line voltage to one of the source followers and transferring a reference voltage to the other source follower. After transferring the digit line voltage and the reference voltage, the source followers may be enabled so that signals representative of the digit line voltage and the reference voltage are transferred from the outputs of the source followers to the sense amplifier for sensing.

Methods, systems, and devices for a source follower-based sensing architecture and sensing scheme are described. In one example, a memory device may include a sense circuit that includes two source followers that are coupled to each other and to a sense amplifier. A method of operating the memory device may include transferring a digit line voltage to one of the source followers and transferring a reference voltage to the other source follower. After transferring the digit line voltage and the reference voltage, the source followers may be enabled so that signals representative of the digit line voltage and the reference voltage are transferred from the outputs of the source followers to the sense amplifier for sensing.