Patent classifications
H01B3/02
Surface modified overhead conductor
The present invention relates to a surface modified overhead conductor with a coating that allows the conductor to operate at lower temperatures. The coating is an inorganic, non-white coating having durable heat and wet aging characteristics. The coating preferably contains a heat radiating agent with desirable properties, and an appropriate binder/suspension agent. In a preferred embodiment, the coating has L* value of less than 80, a heat emissivity of greater than or equal to 0.5, and/or a solar absorptivity coefficient of greater than 0.3.
Surface modified overhead conductor
The present invention relates to a surface modified overhead conductor with a coating that allows the conductor to operate at lower temperatures. The coating is an inorganic, non-white coating having durable heat and wet aging characteristics. The coating preferably contains a heat radiating agent with desirable properties, and an appropriate binder/suspension agent. In a preferred embodiment, the coating has L* value of less than 80, a heat emissivity of greater than or equal to 0.5, and/or a solar absorptivity coefficient of greater than 0.3.
Electrical contactor and panel assemblies
An electrical contactor assembly includes an electrical contactor, a post in electrical communication with the electrical contactor, an insulator body, and a heat sink. The insulator body is in intimate mechanical contact with the post. The heat sink is in intimate mechanical contact with the insulator body and is in thermal communication with the electrical contactor through the post and the insulator body such that heat flowing between contactor and the heat sink flows through the post and the insulator body.
Electrical contactor and panel assemblies
An electrical contactor assembly includes an electrical contactor, a post in electrical communication with the electrical contactor, an insulator body, and a heat sink. The insulator body is in intimate mechanical contact with the post. The heat sink is in intimate mechanical contact with the insulator body and is in thermal communication with the electrical contactor through the post and the insulator body such that heat flowing between contactor and the heat sink flows through the post and the insulator body.
Atomically thin crystals and films and process for making same
The invention provides a process for exfoliating a 3-dimensional layered material to produce a 2-dimensional material, said process comprising the steps of mixing the layered material in a solvent to provide a mixture; applying energy, for example ultrasound, to said mixture, and removing the energy applied to the mixture, such that sedimentation of the 2-dimensional material out of solution as a weakly re-aggregated, exfoliated 2-dimensional material is produced. The invention provides a fast, simple and high yielding process for separating 3-dimensional layered materials into individual 2-dimensional layers or flakes, which do not strongly re-aggregate, without utilising hazardous solvents.
Atomically thin crystals and films and process for making same
The invention provides a process for exfoliating a 3-dimensional layered material to produce a 2-dimensional material, said process comprising the steps of mixing the layered material in a solvent to provide a mixture; applying energy, for example ultrasound, to said mixture, and removing the energy applied to the mixture, such that sedimentation of the 2-dimensional material out of solution as a weakly re-aggregated, exfoliated 2-dimensional material is produced. The invention provides a fast, simple and high yielding process for separating 3-dimensional layered materials into individual 2-dimensional layers or flakes, which do not strongly re-aggregate, without utilising hazardous solvents.
Hydrogen free amorphous silicon as insulating dielectric material for superconducting quantum bits
A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states. The film is prepared by deposition of a dielectric material on a substrate having a high substrate temperature T.sub.sub under high vacuum and at a controlled low deposition rate. In one embodiment, the film is amorphous silicon while in another embodiment the film is amorphous germanium.
Hydrogen free amorphous silicon as insulating dielectric material for superconducting quantum bits
A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states. The film is prepared by deposition of a dielectric material on a substrate having a high substrate temperature T.sub.sub under high vacuum and at a controlled low deposition rate. In one embodiment, the film is amorphous silicon while in another embodiment the film is amorphous germanium.
Siloxanes, doped siloxanes, methods for their synthesis, compositions containing the same, and films formed therefrom
In one aspect, the present invention provides undoped and doped siloxanes, germoxanes, and silagermoxanes that are substantially free from carbon and other undesired contaminants. In a second aspect, the present invention provides methods for making such undoped and doped siloxanes, germoxanes, and silagermoxanes. In still another aspect, the present invention provides compositions comprising undoped and/or doped siloxanes, germoxanes, and silagermoxanes and a solvent, and methods for forming undoped and doped dielectric films from such compositions. Undoped and/or doped siloxane compositions as described advantageously provide undoped and/or doped dielectric precursor inks that may be employed in forming substantially carbon-free undoped and/or doped dielectric films.
Siloxanes, doped siloxanes, methods for their synthesis, compositions containing the same, and films formed therefrom
In one aspect, the present invention provides undoped and doped siloxanes, germoxanes, and silagermoxanes that are substantially free from carbon and other undesired contaminants. In a second aspect, the present invention provides methods for making such undoped and doped siloxanes, germoxanes, and silagermoxanes. In still another aspect, the present invention provides compositions comprising undoped and/or doped siloxanes, germoxanes, and silagermoxanes and a solvent, and methods for forming undoped and doped dielectric films from such compositions. Undoped and/or doped siloxane compositions as described advantageously provide undoped and/or doped dielectric precursor inks that may be employed in forming substantially carbon-free undoped and/or doped dielectric films.