A graphene compound made from the method of preparing graphene flakes or chemical vapor deposition grown graphene films on a SiO.sub.2/Si substrate; exposing the graphene flakes or the chemical vapor deposition grown graphene film to hydrogen plasma; performing hydrogenation of the graphene; wherein the hydrogenated graphene has a majority carrier type; creating a bandgap from the hydrogenation of the graphene; applying an electric field to the hydrogenated graphene; and tuning the bandgap.

A conductive film that includes: particles of a layered material including one or more layers, wherein each of the one or more layers includes a layer body represented by: M.sub.mX.sub.n, wherein M is at least one metal of Group 3, 4, 5, 6, or 7, X is a carbon atom, a nitrogen atom, or a combination thereof, n is 1 to 4, m is greater than n and 5 or less, a modification or termination T is present on a surface of the layer body, where the T is at least one selected from the group consisting of a hydroxyl group, a fluorine atom, a chlorine atom, an oxygen atom, or a hydrogen atom; and a phosphorus atom in an amount of 0.001% by mass to less than 0.09% by mass.

A conductive film that includes: particles of a layered material including one or more layers, wherein each of the one or more layers includes a layer body represented by: M.sub.mX.sub.n, wherein M is at least one metal of Group 3, 4, 5, 6, or 7, X is a carbon atom, a nitrogen atom, or a combination thereof, n is 1 to 4, m is greater than n and 5 or less, a modification or termination T is present on a surface of the layer body, where the T is at least one selected from the group consisting of a hydroxyl group, a fluorine atom, a chlorine atom, an oxygen atom, or a hydrogen atom; and a phosphorus atom in an amount of 0.001% by mass to less than 0.09% by mass.

Methods for the fabrication of transparent conductive metal nanowire networks are provided, as well as metal nanowire networks fabricated by such methods. A metal nanowire network can be immersed in a solution and illuminated for a duration of time. Selective nucleation and growth of metal nanoparticles can be induced at the junctions between metal nanowires.

Methods for the fabrication of transparent conductive metal nanowire networks are provided, as well as metal nanowire networks fabricated by such methods. A metal nanowire network can be immersed in a solution and illuminated for a duration of time. Selective nucleation and growth of metal nanoparticles can be induced at the junctions between metal nanowires.

The present invention provides a transparent conductor that is excellent in conductivity, transparency, and low-reflection property and does not cause defects such as a moire pattern; and a touch panel including the transparent conductor. The transparent conductor of the present invention includes an anti-reflection film provided on a surface with projections formed at a pitch equal to or shorter than the wavelength of visible light; and metal fine particles each having a particle size equal to or smaller than the pitch of the projections and being placed in bottom portions of gaps between the projections, the metal fine particles placed in the gaps between the projections constituting mesh conductive portions. The touch panel of the present invention includes the above transparent conductor.

The present invention provides a transparent conductor that is excellent in conductivity, transparency, and low-reflection property and does not cause defects such as a moire pattern; and a touch panel including the transparent conductor. The transparent conductor of the present invention includes an anti-reflection film provided on a surface with projections formed at a pitch equal to or shorter than the wavelength of visible light; and metal fine particles each having a particle size equal to or smaller than the pitch of the projections and being placed in bottom portions of gaps between the projections, the metal fine particles placed in the gaps between the projections constituting mesh conductive portions. The touch panel of the present invention includes the above transparent conductor.

When measuring the molecular mass distribution of conductive aniline polymer of formula (1) by GPC and converting its retention time into molecular mass (M) in terms of sodium polystyrene sulfonate, for the molecular mass (M), the area ratio (X/Y) of the area (X) of a region of 15,000 Da or more to the area (Y) of a region of less than 15,000 Da is 1.20 or more. A method for producing such a polymer includes: polymerization step (Z1) where specific aniline derivative (A) is polymerized in a solution containing basic compound (B), solvent (C), and oxidizing agent (D) at a liquid temperature lower than 25° C.; or polymerization step (Z2) where specific aniline derivative (A) and oxidizing agent (D) are added to and polymerized in a solution of a conductive aniline polymer (P-1) with a unit of formula (1) dissolved or dispersed in a solvent (C). ##STR00001##

When measuring the molecular mass distribution of conductive aniline polymer of formula (1) by GPC and converting its retention time into molecular mass (M) in terms of sodium polystyrene sulfonate, for the molecular mass (M), the area ratio (X/Y) of the area (X) of a region of 15,000 Da or more to the area (Y) of a region of less than 15,000 Da is 1.20 or more. A method for producing such a polymer includes: polymerization step (Z1) where specific aniline derivative (A) is polymerized in a solution containing basic compound (B), solvent (C), and oxidizing agent (D) at a liquid temperature lower than 25° C.; or polymerization step (Z2) where specific aniline derivative (A) and oxidizing agent (D) are added to and polymerized in a solution of a conductive aniline polymer (P-1) with a unit of formula (1) dissolved or dispersed in a solvent (C). ##STR00001##

Metal nanowires with uniform noble metal coatings are described. Two methods, galvanic exchange and direct deposition, are disclosed for the successful formation of the uniform noble metal coatings. Both the galvanic exchange reaction and the direct deposition method benefit from the inclusion of appropriately strong binding ligands to control or mediate the coating process to provide for the formation of a uniform coating. The noble metal coated nanowires are effective for the production of stable transparent conductive films, which may comprise a fused metal nanostructured network.