A PTC thermistor module for a temperature control device may include at least one PTC thermistor element, two electrically insulating insulator plates, and a plurality of electrical conductors. The PTC thermistor element may have a flat element cross section, two opposing large outer surfaces, and two opposing small outer surfaces connecting the two large outer surfaces. The two insulator plates may be respectively connected to one of the two large outer surfaces. The plurality of electrical conductors may be configured as a plurality of electrically conductive conductor coatings, which may each be disposed on an associated insulator plate of the two insulator plates. At least one first conductor coating may be electrically connected to a first large outer surface of the two large outer surfaces. At least two second conductor coatings may be electrically connected to a second large outer surface of the two large outer surfaces.

Provided is a semiconductor device which is a facedown mounting, chip-size-package-type semiconductor device and includes: a transistor element including a first electrode, a second electrode, and a control electrode which controls a conduction state between the first electrode and the second electrode; a plurality of first resistor elements each including a first electrode and a second electrode, the first electrodes of the first resistor elements being electrically connected to the second electrode of the transistor element; one or more external resistance terminals to which the second electrodes of the plurality of first resistor elements are physically connected; a first external terminal electrically connected to the first electrode of the transistor element; and an external control terminal electrically connected to the control electrode. The one or more external resistance terminals, the first external terminal, and the external control terminal are external connection terminals provided on a surface of the semiconductor device.

Provided is a semiconductor device which is a facedown mounting, chip-size-package-type semiconductor device and includes: a transistor element including a first electrode, a second electrode, and a control electrode which controls a conduction state between the first electrode and the second electrode; a plurality of first resistor elements each including a first electrode and a second electrode, the first electrodes of the first resistor elements being electrically connected to the second electrode of the transistor element; one or more external resistance terminals to which the second electrodes of the plurality of first resistor elements are physically connected; a first external terminal electrically connected to the first electrode of the transistor element; and an external control terminal electrically connected to the control electrode. The one or more external resistance terminals, the first external terminal, and the external control terminal are external connection terminals provided on a surface of the semiconductor device.

Disclosed is a circuit protection device including a case, a negative temperature coefficient thermistor accommodated in the case and including a resistant heating element, a pair of electrodes installed on both sides of the resistant heating element, and a first thermistor lead wire and a second thermistor lead wire withdrawn from the pair of electrodes, respectively, and a fuse accommodated in the case and including a fuse body and a first fuse lead wire and a second fuse lead wire connected to both ends of the fuse body, respectively. Here, the fuse body includes a fuse rod with a plating layer formed thereon and a pair of fuse caps coupled to both ends of the fuse rod and having conductivity, and the first fuse lead wire and the second fuse lead wire are bonded to the pair of fuse caps, respectively.

A PTC thermistor module for a temperature control device may include at least one PTC thermistor element. The PTC thermistor element may include an upper side and an underside facing away from the upper side. The upper side and on the underside may be respectively applied in a heat-exchanging manner with a heat-conducting plate. An edge side, connecting the upper side and the underside with one another in an edge-side manner, of at least one of the PTC thermistor elements, may be applied to a heat-conducting element, which has a thermal conductivity of at least 5 W/mK. A temperature control device may include at least one such PTC thermistor module.

A heat utilizing device is provided in which the thermal resistance of the wiring layer is increased while an increase in electric resistance of the wiring layer is limited. Heat utilizing device has thermistor whose electric resistance changes depending on temperature; and wiring layer that is connected to thermistor. A mean free path of phonons in wiring layer is smaller than a mean free path of phonons in an infinite medium that consists of a material of wiring layer.

In an embodiment a thermal protection device includes a housing, a varistor partly embedded in the housing, wherein the housing electrically insulates the varistor, and wherein the varistor includes a partly uninsulated contact surface, an inner wall of insulating material arranged adjacent to the contact surface of the varistor, a window in the inner wall configured to allow an electrical connection of the contact surface of the varistor in an operational state of the thermal protection device and a moveable insulation block configured to cover the window in the inner wall to insulate the varistor in a region of the window of the inner wall in a fault state of the thermal protection device.

In an embodiment a thermal protection device includes a housing, a varistor partly embedded in the housing, wherein the housing electrically insulates the varistor, and wherein the varistor includes a partly uninsulated contact surface, an inner wall of insulating material arranged adjacent to the contact surface of the varistor, a window in the inner wall configured to allow an electrical connection of the contact surface of the varistor in an operational state of the thermal protection device and a moveable insulation block configured to cover the window in the inner wall to insulate the varistor in a region of the window of the inner wall in a fault state of the thermal protection device.

Provided is a semiconductor device which is a facedown mounting, chip-size-package-type semiconductor device and includes: a transistor element including a first electrode, a second electrode, and a control electrode which controls a conduction state between the first electrode and the second electrode; a plurality of first resistor elements each including a first electrode and a second electrode, the first electrodes of the first resistor elements being electrically connected to the second electrode of the transistor element; one or more external resistance terminals to which the second electrodes of the plurality of first resistor elements are physically connected; a first external terminal electrically connected to the first electrode of the transistor element; and an external control terminal electrically connected to the control electrode. The one or more external resistance terminals, the first external terminal, and the external control terminal are external connection terminals provided on a surface of the semiconductor device.

Provided is a semiconductor device which is a facedown mounting, chip-size-package-type semiconductor device and includes: a transistor element including a first electrode, a second electrode, and a control electrode which controls a conduction state between the first electrode and the second electrode; a plurality of first resistor elements each including a first electrode and a second electrode, the first electrodes of the first resistor elements being electrically connected to the second electrode of the transistor element; one or more external resistance terminals to which the second electrodes of the plurality of first resistor elements are physically connected; a first external terminal electrically connected to the first electrode of the transistor element; and an external control terminal electrically connected to the control electrode. The one or more external resistance terminals, the first external terminal, and the external control terminal are external connection terminals provided on a surface of the semiconductor device.