A method for producing a device for measuring current strengths. The method includes providing a resistor arrangement with two connection elements and a resistor element arranged between the connection elements, molding a contact element from the material of the connection element or from the material of the resistor element. The contact element has an end face remote from the resistor arrangement and a cavity open on the end face. The method further includes providing a circuit board with a through-bore on whose inner surface electrically conductive material is present, positioning the circuit board on the resistor arrangement such that the contact element projects into the through-bore, and expanding the contact element in the radial direction using an expansion element inserted into the cavity of the contact element to establish an electrically conductive connection between the contact element and the electrically conductive material on the inner surface of the through-bore.

One aspect is a resistor component for surface mounting on a printed circuit board, including a ceramic substrate with a first side and an opposite second side. A sinterable metallization is at least in some regions arranged on the second side. A resistance element comprising a metal layer is arranged at least in some regions on the first side of the ceramic substrate with a first connection and a second connection. An insulation layer is arranged at least in some regions on the resistance element and the ceramic substrate. A first region on the first connection and a second region on the second connection remain uncovered by the insulation layer. A first contact pad electrically contacts the first connection via the first region, and a second contact pad electrically contacts the second connection via the second region. The first contact pad at least in some regions covers a first surface region of the insulation layer and the second contact pad at least in some regions covers a second surface region of the insulation layer, and the first and the second contact pads are arranged spatially separated from one another on the insulation layer.

A strain gauge includes a flexible substrate; a resistor formed of material including at least one from among chromium and nickel, on or above the substrate; and electrodes electrically coupled to the resistor. Each electrode includes a terminal section extending from a corresponding end portion from among end portions of the resistor; a first metallic layer formed of copper, a copper alloy, nickel, or a nickel alloy, on or above the terminal section; and a second metallic layer formed of material having better solder wettability than the first metallic layer, on or above the first metallic layer.

An electronic component manufacturing method comprising: a first step of moving an electronic component body in a first direction relative to a dip layer of a conductive paste to immerse the electronic component body in the dip layer; a second step of moving the electronic component body relative to the dip layer in a second direction that is opposite to the first direction, thereby separating the electronic component body from the dip layer; a third step of forcibly cutting a connection between the conductive paste coated on the end portions of the electronic component body and the dip layer, using a contact with a solid or fluid cutter; and a fourth step of removing excess paste from the conductive paste coated on the end portions of the electronic component body. The third and fourth steps may be conducted simultaneously by cutting and removing the paste with the paste removal member.

A multilayer device and a method for producing a multilayer device are disclosed. In an embodiment a multilayer device includes a main body having at least two external electrodes, at least one first internal electrode; at least one second internal electrode, wherein each internal electrode is electrically conductively connected to an external electrode, a plurality of ceramic layers, wherein the ceramic layers comprise the internal electrodes and at least one dielectric layer, wherein, viewed along a stack direction of the ceramic layers, the dielectric layer being arranged between the internal electrodes, and wherein the dielectric layer is printed onto at least one sub-region of one of the ceramic layers.

Provided is a thermistor which has a smaller change in resistance value between before and after a heat resistance test and from which a high B constant is obtained, a method for manufacturing the same, and a thermistor sensor. The thermistor is a thermistor formed on a substrate and includes: an intermediate stacked portion formed on the substrate; and a main metal nitride film layer formed of a thermistor material of a metal nitride on the intermediate stacked portion, wherein the intermediate stacked portion includes a base thermistor layer formed of a thermistor material of a metal nitride and an intermediate oxynitride layer formed on the base thermistor layer, the main metal nitride film layer is formed on the intermediate oxynitride layer, and the intermediate oxynitride layer is a metal oxynitride layer formed through oxidation of the thermistor material of the base thermistor layer immediately below the intermediate oxynitride layer.

A radial-leaded over-current protection device comprises a PTC element, a first electrode lead, a second electrode lead and an electrically insulating encapsulation layer. The PTC element comprises a first conductive layer, a second conductive layer and a PTC material layer laminated therebetween. The PTC material layer comprises crystalline polymer and conductive filler dispersed therein. The first electrode lead has an end connecting to the first conductive layer, whereas the second electrode lead has an end connecting to the second conductive layer. The electrically insulating encapsulation layer includes a fluorine-containing polymer, and wraps around an entire outer surface of the PTC element and the ends of the first and second electrodes connecting to the PTC element. The electrically insulating encapsulation layer has a thickness of 10.sup.2˜10.sup.5 nm, and the radial-leaded over-current protection device has an initial resistance R.sub.bf of 0.0017˜0.0027Ω.

An over-current protection device comprises first and second electrode layers and a PTC material layer laminated therebetween. The PTC material layer comprises a polymer matrix and carbon black. The polymer matrix comprises a fluoropolymer having a melting point higher than 150° C. The carbon black is dispersed in the polymer matrix. A resistance jump R.sub.jump_1000@16V/50A of the over-current protection device at 16V/50 A by 1000 cycles is 0.80-1.20. A resistance jump R.sub.1000@16V/50A of the over-current protection device at 25V/50 A by 1000 cycles is 0.90-1.30.

A surface-mountable over-current protection device comprises at least one PTC material layer, a first conductive layer, a second conductive layer, a first electrode, a second electrode, an insulating layer, and a cover layer. The PTC material layer comprises crystalline polymer and conductive fillers dispersed therein. The first conductive layer and the second conductive layer are disposed on a first surface and a second surface of the PTC material layer, respectively. The first electrode and the second electrode are electrically connected to the first conductive layer and the second conductive layer, respectively. The insulating layer is disposed between the first electrode and the second electrode for insulation. The cover layer includes a fluorine-containing polymer, and wraps around an entire outer surface of the surface-mountable over-current protection device.

A chip component comprises: an insulating substrate on which a resistor serving as a functional element is formed; a pair of internal electrodes (front electrodes, end surface electrodes, and back electrodes) that is formed to cover both end portions of the insulating substrate and connected to the resistor; a barrier layer that is formed on a surface of each of the internal electrodes and mainly composed of nickel; and an external connection layer that is formed on a surface of the barrier layer and mainly composed of tin, and the barrier layer is composed of alloy plating (Ni—P) including nickel and phosphorus, which is formed by electrolytic plating, and a content ratio of phosphorus relative to nickel is set in a range of 0.5% to 5% so that the barrier layer has magnetism.