The embodiments described herein include amplifiers configured for use in radio frequency (RF) applications. In accordance with these embodiments, the amplifiers are implemented to generate a shaped envelope signal, and to apply the shaped envelope signal to transistor gate(s) of the amplifier to provide gate bias modulation. So configured, the shaped envelope signal may facilitate high linearity in the amplifier.

Provided are a light deflector and a light output device including the light deflector, the light deflector including a first electrode layer and a second electrode layer that are spaced apart from each other and facing each other, and a deflection layer configured to deflect incident light thereon based on a voltage applied to the first electrode layer and the second electrode layer, wherein the first electrode layer includes a plurality of electrode elements that are spaced apart from each other, and a resistor that is in contact with at least part of the plurality of electrode elements and in which a voltage drop is generated.

This application relates to a heating unit and a method for manufacturing the same. The heating unit according to an exemplary embodiment of this application includes a substrate, a transmittance adjusting layer which is provided on the substrate and includes one or more selected from a group consisting of Ni, Cr, Mo, Pt, and Ti; and a conductive heating pattern provided on the transmittance adjusting layer.

This application relates to a heating unit and a method for manufacturing the same. The heating unit according to an exemplary embodiment of this application includes a substrate, a transmittance adjusting layer which is provided on the substrate and includes one or more selected from a group consisting of Ni, Cr, Mo, Pt, and Ti; and a conductive heating pattern provided on the transmittance adjusting layer.

Stacks of electrically resistive materials and related apparatuses, electrical systems, and methods are disclosed. An apparatus includes one or more resistor devices including a substrate, first and second electrically resistive materials, and an electrically insulating material between the first and second electrically resistive materials. The substrate includes a semiconductor material. A stepped trench is defined in the substrate by sidewalls and horizontal surfaces of the semiconductor material. The first electrically resistive material and the second electrically resistive material are within the stepped trench. A method of manufacturing a resistor device includes forming a stepped trench in the substrate, forming an etch stop material within the stepped trench, disposing an electrically resistive material within the stepped trench, disposing an electrically insulating material on the electrically resistive material, and repeating the disposing the electrically resistive material and the disposing the electrically insulating material operations a predetermined number of times.

Provided is a method for producing a resistor, including a step of forming a through-hole in a sheet-like conductive material; a step of fitting a resistive element piece into the through-hole and thus forming joint portions where end surfaces of the resistive element piece are joined to respective side surfaces of the conductive material exposed by the through-hole; and stamping a region including the joint portions from the conductive material, thereby forming a resistor including a resistive element and a pair of electrodes.

Provided is a method for producing a resistor, including a step of forming a through-hole in a sheet-like conductive material; a step of fitting a resistive element piece into the through-hole and thus forming joint portions where end surfaces of the resistive element piece are joined to respective side surfaces of the conductive material exposed by the through-hole; and stamping a region including the joint portions from the conductive material, thereby forming a resistor including a resistive element and a pair of electrodes.

The present invention addresses the problem of many man-hours being required for a hardware engineer to adjust a resistance value such that the rise time of a signal input to an LSI body falls within a defined range. To solve this problem, the present invention provides a control circuit provided with: a conductive wire for transmitting an input electric signal to an integrated circuit; a resistance circuit which has a variable resistance value and which is connected to the conductive wire and grounded; a measurement means for measuring a rise time of the electric signal transmitted through the conductive wire, that is, the amount of time it takes for the voltage value of the electric signal to reach a predetermined second voltage value from a predetermined first voltage value, said predetermined second voltage value being higher than the first voltage value; and a control means for changing the resistance value of the resistance circuit to a value which is lower by a specific amount when the time measured by the measurement means is shorter than the minimum time of a predetermined time range, and changing the resistance value to a value which is higher by a specific amount when the time measured by the measurement means is longer than the maximum time of the predetermined time range. The control means outputs a predetermined signal upon having changed the resistance value a predetermined number of times.

The present invention addresses the problem of many man-hours being required for a hardware engineer to adjust a resistance value such that the rise time of a signal input to an LSI body falls within a defined range. To solve this problem, the present invention provides a control circuit provided with: a conductive wire for transmitting an input electric signal to an integrated circuit; a resistance circuit which has a variable resistance value and which is connected to the conductive wire and grounded; a measurement means for measuring a rise time of the electric signal transmitted through the conductive wire, that is, the amount of time it takes for the voltage value of the electric signal to reach a predetermined second voltage value from a predetermined first voltage value, said predetermined second voltage value being higher than the first voltage value; and a control means for changing the resistance value of the resistance circuit to a value which is lower by a specific amount when the time measured by the measurement means is shorter than the minimum time of a predetermined time range, and changing the resistance value to a value which is higher by a specific amount when the time measured by the measurement means is longer than the maximum time of the predetermined time range. The control means outputs a predetermined signal upon having changed the resistance value a predetermined number of times.

A power diffusing assembly includes a power diffusing body disposed along a flow path of a compressible fluid. The power diffusing body includes passages extending through the power diffusing body and through which at least part of the fluid flows through the power diffusing body. The power diffusing body receives an incoming flow profile of the fluid on an inlet side of the power diffusing body, directs the fluid through the passages in the power diffusing body, and outputs an outgoing flow profile of the fluid out of an outlet side of the power diffusing body. Arrangements of the passages in the power diffusing body are based on the incoming flow profile of the fluid that are received by the power diffusing body and are based on a desired profile of the outgoing flow profile of the fluid exiting out of the power diffusing body.