Patent classifications
H01C7/008
Heat utilizing device
A heat utilizing device is provided in which the thermal resistance of the wiring layer is increased while an increase in electric resistance of the wiring layer is limited. Heat utilizing device has thermistor whose electric resistance changes depending on temperature; and wiring layer that is connected to thermistor. A mean free path of phonons in wiring layer is smaller than a mean free path of phonons in an infinite medium that consists of a material of wiring layer.
Thermistor with protective film and manufacturing method thereof
A thermistor has a thermistor element, a protective film, and an electrode portion. The protective film is formed of a SiO.sub.2 film having a film thickness in a range of 50 nm or more and 1000 nm or less. The protective film is formed in contact with the thermistor element. Alkali metal is unevenly distributed in a region including an interface between the thermistor element and the protective film.
Sputtering electrode with multiple metallic-layer structure for semiconductor device and method for producing same
An electrode with multiple metallic-layers structure formed by a magnetron sputtering technique for a semiconductor device and method for producing same is disclosed. The ceramic device includes at least one from selected group consisting of ZnO-MOV (metal oxide varistors), BaTiO3-PTC (positive temperature coefficient) thermistors, Mn3O4-NTC (negative temperature coefficient) thermistors, and capacitors. The multiple metallic-layers include a sputtered buffer layer and a sputtered electrical contact layer. The buffer layer includes at least one alloy selected form group consisting of NiCr (Ni from 50-90 wt %), TiNi (Ti from 40-60 wt %), and AlNi (Al from 40-70 wt %) and the thickness of this layer is from greater than zero to less than 100 nm. The electrical contact layer includes at least one of Cu, Ag, Pt, Au, or combination. More specifically, the electrode includes one of NiCr/Cu system, NiCr/Ag system, NiCr/Cu/Ag system, TiNi/Cu/Ag system, or AlNi/Cu/Ag system. The thickness ratio of the electrical contact layer to the intermetallic barrier layer is from 1 to 4.
Tag reader
According to one or more embodiments, the tag reader includes a communication controller, a temperature measuring sensor, and a processor. The communication controller controls an output signal to be output from an antenna of the tag reader. The temperature measuring sensor measures an internal temperature of the tag reader. The processor sets the output value of an output signal based on the measured temperature and causes the communication control circuit to output the output signal from the antenna at the set output value.
Battery module and apparatus
The present application discloses a battery module and an apparatus, which relates to the field of battery technology and is used for optimizing the structure of the battery module. The battery module includes a battery, a connecting piece, a wire harness board and a temperature collecting component. The battery includes an electrode terminal and a top cover. The connecting piece is fixed with the electrode terminal; the wire harness plate is arranged on the top outside of the top cover, and is provided with an installation part and an elastic pressing part. The temperature collecting component is installed in the installation part and is located between the wire harness plate and the top cover. Among them, the elastic pressing part abuts against the connecting piece, and the temperature collecting component abuts against the top cover.
Metal nitride material for thermistor, method for producing same, and film thermistor sensor
Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: Ti.sub.xAl.sub.y(N.sub.1-wO.sub.w).sub.z (where 0.70≦y/(x+y)≦0.95, 0.45≦z≦0.55, 0<w≦0.35, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.
Temperature sensor
The temperature sensor is provided with a pair of lead frames, a sensor portion connected to the pair of lead frames, and an insulating holding portion which is fixed to the pair of lead frames and holds the lead frames. The sensor portion is provided with an insulating film; a thin film thermistor portion formed as a pattern on the surface of the insulating film with a thermistor material; a pair of interdigitated electrodes formed as patterns having multiple comb portions and facing each other on the thin film thermistor portion; and a pair of pattern electrodes connected to the pair of interdigitated electrodes and formed as patterns on the surface of the insulating film. The pair of lead frames is extended and adhered to the surface of the insulating film disposing the thin film thermistor portion therebetween and is connected to the pair of pattern electrodes.
Component Stability Structure
An electronic component assembly is described which comprises a stack of electronic components wherein each electronic component comprises a face and external terminations. A component stability structure is attached to at least one face. A circuit board is provided wherein the circuit board comprises circuit traces arranged for electrical engagement with the external terminations. The component stability structure mechanically engages with the circuit board and inhibits the electronic device from moving relative to the circuit board.
THERMISTOR SINTERED BODY AND TEMPERATURE SENSOR ELEMENT
Provided is a thermistor sintered body which stably provides a desired B constant even if a composition deviation of an additive element has occurred. The thermistor sintered body-includes a Y.sub.2O.sub.3 phase and a YMnO.sub.3 phase, wherein a chemical composition of Cr, Mn, Ca and Y excluding oxygen includes Cr: 3 mol % or less (while including 0%), Mn: 5 to 18 mol %, Ca: 1 to 18 mol %, and Sr: 1 to 25 mol %, with the balance being unavoidable impurities and Y. In the thermistor sintered body, Ca and Sr may be dissolved in the YMnO.sub.3 phase.
BATTERY PACK
A battery pack comprises a battery and a flexible printed circuit board (FPC) utilized to detect a voltage and a temperature of the battery. The FPC comprises a substrate having a front surface and a back surface, a thermistor which detects a temperature of the battery, temperature detection lines and voltage detection lines. The temperature detection lines are electrically connected to a thermistor and arranged between the back surface and the battery. The voltage detection lines are arranged on the front surface so as to overlap the temperature detection lines in a case that the FPC is observed in a plane view in a transmissive manner from a back surface to a front surface.