Provided are a metal nitride material for a thermistor, which has a high heat resistance and a high reliability and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: V.sub.xAl.sub.y(N.sub.1-wO.sub.w).sub.z (where 0.70≦y/(x+y)≦0.98, 0.45≦z≦0.55, 0<w≦0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. The method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using a V—Al alloy sputtering target.

A ceramic electronic component includes a ceramic body, baked external electrodes, and plated external electrodes, and glass layers derived from a glass material included in a conductive paste of the baked external electrodes, are provided at interfaces between the baked external electrodes and the ceramic body, such that the glass layers extend from the interfaces between the ceramic body and the baked external electrodes to a surface of the ceramic body that does not contain the baked external electrodes.

A medical temperature monitoring system includes an electrical wire set having a thermistor at a distal end of the wire set configured to sense temperatures to which the thermistor is exposed; an electronic circuit in electrical communication with the wire set and the thermistor and configured to convert the temperatures sensed by the thermistor to temperature display signals; a display in electrical communication with the electronic circuit for receiving the temperature display signals and displaying temperatures corresponding to the temperature display signals; and a bead of cured protective material encapsulating the thermistor. The protective material is a radiation curable adhesive applied to the thermistor in an uncured state and then cured to encapsulate the thermistor. The bead of cured protective material electrically isolates the conductor sufficient to pass a Hi-Pot test at 500 VAC, <0.1 mA.

Structurally supported positive temperature coefficient (PTC) materials are disclosed. Furthermore, methods to provide structurally supported PTC materials are disclosed. In one implementation, a structurally supported PTC material includes a support structure that is at least partially covered by a PTC material. In one example, the support structure is a mesh material integrated at least partially in the PTC material.

A thermistor element includes: a thermistor film; a pair of first electrodes in contact with one surface of the thermistor film; an insulation film opposite to a contact side of the pair of first electrodes, the contact side on which the pair of first electrodes is in contact with the thermistor film; and at least one opening portion located in a region which overlaps each of the first electrodes when viewed in a plan view and passing through the insulation film. Each first electrode has a first portion located where each of the first electrodes and the opening portion overlap when viewed in a plan view and a second portion outside of where each of the first electrodes and the opening portion overlap when viewed in a plan view and is over the first portion and second portion to be in contact with the one surface of the thermistor film.

Provided are a metal nitride material for a thermistor, which has a high reliability and a high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: Cr.sub.xAl.sub.y(N.sub.1-wO.sub.w).sub.z (where 0.70≦y/(x+y)≦0.95, 0.45≦z≦0.55, 0<w≦0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

A temperature detecting apparatus includes a thermistor; a resistor connected in series to the thermistor: a temperature detector connected to a first node between the thermistor and the resistor; and a switch circuit including a first switch, a second switch, a third switch, and a fourth switch. The first switch and the third switch are connected in series, the second switch and the fourth switch are connected in series, the first switch and the second switch are connected to a power side, the third switch and the fourth switch are connected to a ground side, the thermistor is connected to a second node between the first switch and the third switch, and the resistor is connected to a third node between the second switch and the fourth switch.

An inrush current limiting circuit in aspects of the present disclosure may have one or more of the following features: a printed circuit board, an electrical input disposed on the circuit board, one or more electrical outputs disposed on the circuit board, a current limiting circuit connected between the electrical input and the one or more electrical outputs, at least one microcontroller connected within the current limiting circuit, at least one current sensor connected within the current limiting circuit, one or more current limiting components within the current limiting circuit for increasing voltage and current over time from the electrical input to the one or more electrical outputs by operation of the current sensor and the microcontroller.

An electrical component includes a main body, a metallic contact structure, which is in direct contact with the main body, and an electrically insulating passivation layer provided with an opening. The metallic contact structure is connected to an external contact-making element through the opening. Furthermore, the external contact-making element is covered and enclosed by a flexible metal composite layer. A method for producing an electrical component is also specified.

A thermistor material and a method for preparing a thermistor material are provided. The thermistor material is prepared by mixing and heating a mixture containing BaTiO.sub.3, B.sub.2O.sub.3, SiO.sub.2, Li.sub.2O, P.sub.2O.sub.5, Cs.sub.2O, Nd.sub.2O.sub.3, Al.sub.2O.sub.3 and TiO.sub.2.