The embodiments relate to a method for detecting the temperature of a fluid flow of a control valve which has an electromagnetic actuator, in which a temperature-sensitive resistor is exposed to the fluid flow, and is integrated into a detection circuit. As a function of the fluid temperature, a primary circuit of the electromagnetic actuator is inductively influenced by the detection circuit.

The embodiments relate to a method for detecting the temperature of a fluid flow of a control valve which has an electromagnetic actuator, in which a temperature-sensitive resistor is exposed to the fluid flow, and is integrated into a detection circuit. As a function of the fluid temperature, a primary circuit of the electromagnetic actuator is inductively influenced by the detection circuit.

A thermosensitive chip for a composite electrode is provided, including a thermosensitive substrate, wherein each of the two surfaces of the thermosensitive substrate is sequentially provided thereon with a silver electrode and a gold electrode from the inside to the outside in a stacked manner. The thermosensitive chip is suitable for the gold wire bonding technology, the gold electrode on the outer surface thereof facilitates better bonding with a gold wire, and the silver electrode on the bottom of the gold electrode can greatly reduce manufacturing costs. In addition, an operation of coating with gold is conducted through a vacuum sputtering machine, so that the manufacturing process is simple and convenient, and the manufacturing effect is good.

A thermosensitive chip for a composite electrode is provided, including a thermosensitive substrate, wherein each of the two surfaces of the thermosensitive substrate is sequentially provided thereon with a silver electrode and a gold electrode from the inside to the outside in a stacked manner. The thermosensitive chip is suitable for the gold wire bonding technology, the gold electrode on the outer surface thereof facilitates better bonding with a gold wire, and the silver electrode on the bottom of the gold electrode can greatly reduce manufacturing costs. In addition, an operation of coating with gold is conducted through a vacuum sputtering machine, so that the manufacturing process is simple and convenient, and the manufacturing effect is good.

An NTC component comprising a first electrode (1) and a second electrode (2) is specified. The NTC component further comprises an NTC element (3) disposed between the first electrode (1) and the second electrode (2), wherein the NTC element (3) comprises a ceramic having the general composition AB.sub.2O.sub.4, and where A and B each comprise one or more of the materials Mn, Ni, Co and Cu, and B additionally comprises one or more of the materials Fe, Y, Pr, Al, In, Ga and Sb.

A component having an active volume, the active volume not being centrally positioned along a height of the component, and/or not being centrally positioned along a width of the component. Use of the component is also disclosed. Further aspects relate to a use of the component and to a component. The component can be an NTC thermistor or a PTC thermistor or a temperature measurement element. Use of the component for monitoring a temperature of a battery or in a vehicle is also disclosed.

A thermistor element satisfies 4≦(d/ed) when a first distance is d, which is a shortest distance between a first internal electrode and a second external electrode, whereas a second distance is referred to as ed, which is a shortest distance between the first internal electrode and a fifth internal electrode, in a cross section of a body including an L direction and a T direction thereof.

A thermistor element satisfies 4≦(d/ed) when a first distance is d, which is a shortest distance between a first internal electrode and a second external electrode, whereas a second distance is referred to as ed, which is a shortest distance between the first internal electrode and a fifth internal electrode, in a cross section of a body including an L direction and a T direction thereof.

Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first electrode, a second electrode, a gate structure and a temperature sensitive component. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap greater than that of the first nitride semiconductor layer. The first electrode, the second electrode and the gate structure are disposed on the second nitride semiconductor layer. The temperature sensitive component is disposed external to a region between the gate structure and the first electrode along a first direction in parallel to an interface of the first nitride semiconductor layer and the second nitride semiconductor layer.

Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first electrode, a second electrode, a gate structure and a temperature sensitive component. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap greater than that of the first nitride semiconductor layer. The first electrode, the second electrode and the gate structure are disposed on the second nitride semiconductor layer. The temperature sensitive component is disposed external to a region between the gate structure and the first electrode along a first direction in parallel to an interface of the first nitride semiconductor layer and the second nitride semiconductor layer.