Embodiments of this application provide a method for preparing a thin film piezoresistive material, a thin film piezoresistive material, a robot, and a device. The method includes: determining a mass ratio of conductive particles to a cross-linked polymer in preparation of the thin film piezoresistive material, a value range of the mass ratio being 3:97 to 20:80; dispersing the conductive particles and the cross-linked polymer in a solvent according to the mass ratio, to obtain a first dispersion; and curing the first dispersion by using a liquid dropping method within a temperature range of 25° C. to 200° C., to obtain the thin film piezoresistive material. The technical solutions provided by the embodiments of this application provide a method for preparing a thin film piezoresistive material through liquid dropping, thereby effectively controlling the thickness of the piezoresistive material, so that the prepared thin film piezoresistive material has a relatively small thickness.

Embodiments of this application provide a method for preparing a thin film piezoresistive material, a thin film piezoresistive material, a robot, and a device. The method includes: determining a mass ratio of conductive particles to a cross-linked polymer in preparation of the thin film piezoresistive material, a value range of the mass ratio being 3:97 to 20:80; dispersing the conductive particles and the cross-linked polymer in a solvent according to the mass ratio, to obtain a first dispersion; and curing the first dispersion by using a liquid dropping method within a temperature range of 25° C. to 200° C., to obtain the thin film piezoresistive material. The technical solutions provided by the embodiments of this application provide a method for preparing a thin film piezoresistive material through liquid dropping, thereby effectively controlling the thickness of the piezoresistive material, so that the prepared thin film piezoresistive material has a relatively small thickness.

A strain sensor resistor includes: a resistive element (thin-film strain-resistive layer) formed nearly at the center of an upper surface of an insulation substrate to be a base; and front surface electrodes layered and formed on either end part of the resistive element and electrically connected to the resistive element. The entire upper part of the resistive element and a part of the front surface electrodes are covered by a protective film (protective coating). Moreover, back surface electrodes electrically connected to the front surface electrodes are formed on either lower end part of the insulation substrate, and end surface electrodes are formed on either longitudinal end surface of the insulation substrate. The strain sensor resistor has a tip shape solder mountable on a circuit board etc. using the back surface electrodes.

A strain sensor resistor includes: a resistive element (thin-film strain-resistive layer) formed nearly at the center of an upper surface of an insulation substrate to be a base; and front surface electrodes layered and formed on either end part of the resistive element and electrically connected to the resistive element. The entire upper part of the resistive element and a part of the front surface electrodes are covered by a protective film (protective coating). Moreover, back surface electrodes electrically connected to the front surface electrodes are formed on either lower end part of the insulation substrate, and end surface electrodes are formed on either longitudinal end surface of the insulation substrate. The strain sensor resistor has a tip shape solder mountable on a circuit board etc. using the back surface electrodes.

A variable resistance power adjustment device and lamp. The variable resistance power adjustment device includes a mounting base, keycap and resistance adjustment module. The mounting base connecting to the lamp body, working with the lamp body to form a mounting cavity in an enclosure way and provided with a through-hole connecting to the mounting cavity; a keycap connecting to the mounting base flexibly and stretching into the through-hole partially; the resistance adjustment module provided in the mounting cavity, the adjustment part of the resistance adjustment module connecting to the keycap, the resistance adjustment module connects to the driving power supply of the lamp body; the keycap moves to drive the adjustment part of the resistance adjustment module to move, so that the corresponding resistance can be switched into the driving power supply from the resistance adjustment module and the resistance adjustment module adjusts the power of the whole lamp body.

A strain sensor resistor includes: a resistive element (thin-film strain-resistive layer) formed nearly at the center of an upper surface of an insulation substrate to be a base; and front surface electrodes layered and formed on either end part of the resistive element and electrically connected to the resistive element. The entire upper part of the resistive element and a part of the front surface electrodes are covered by a protective film (protective coating). Moreover, back surface electrodes electrically connected to the front surface electrodes are formed on either lower end part of the insulation substrate, and end surface electrodes are formed on either longitudinal end surface of the insulation substrate. The strain sensor resistor has a tip shape solder mountable on a circuit board etc. using the back surface electrodes.

A strain sensor resistor includes: a resistive element (thin-film strain-resistive layer) formed nearly at the center of an upper surface of an insulation substrate to be a base; and front surface electrodes layered and formed on either end part of the resistive element and electrically connected to the resistive element. The entire upper part of the resistive element and a part of the front surface electrodes are covered by a protective film (protective coating). Moreover, back surface electrodes electrically connected to the front surface electrodes are formed on either lower end part of the insulation substrate, and end surface electrodes are formed on either longitudinal end surface of the insulation substrate. The strain sensor resistor has a tip shape solder mountable on a circuit board etc. using the back surface electrodes.

An organic semiconductor element of the present invention includes: an organic semiconductor film formed from single crystal of an organic semiconductor, and a doped layer formed in a surface of the organic semiconductor film. A strain sensor of the present invention includes: the organic semiconductor element, a pair of electrodes which are electrically connected through the doped layer, and a substrate which is deformable, and which has the organic semiconductor element formed on one surface thereof. A vibration sensor of the present invention includes: the organic semiconductor element, a pair of electrodes which are electrically connected through the doped layer, and a substrate which has flexibility, and which is fixed at one end or both ends thereof, the substrate having the organic semiconductor element formed on the surface of the flexible portion of the substrate.

The present invention relates to a method for producing a microelectronic device, successively including: forming a first current collector on a face of a substrate; forming a first electrode on, and in electrical continuity with, a portion of the first current collector; heat treating the first electrode wherein: forming the first collector comprises forming a first collector layer on the face of the substrate and forming a second collector layer covering at least one part to produce a covered part of the first collector layer and having a first face in contact with the first electrode, the second collector layer is configured to protect the covered part during the heat treating, such that the heat treating does not oxidise the covered part.

The present invention relates to a method for producing a microelectronic device, successively including: forming a first current collector on a face of a substrate; forming a first electrode on, and in electrical continuity with, a portion of the first current collector; heat treating the first electrode wherein: forming the first collector comprises forming a first collector layer on the face of the substrate and forming a second collector layer covering at least one part to produce a covered part of the first collector layer and having a first face in contact with the first electrode, the second collector layer is configured to protect the covered part during the heat treating, such that the heat treating does not oxidise the covered part.