A method includes coating at least one conductive element of an electronic device with an electrically non-conductive thixotropic liquid. An electronic device includes a first layer including an upper conductive element, a second layer including a lower conductive element, and a spacer positioned between the layers. The first layer, the second layer, and the spacer define a sensing chamber in which the upper and lower conductive elements move to vary the resistance of the electronic device. A non-conductive thixotropic liquid is present within the sensing chamber. Movement of the layers toward each other displaces the thixotropic liquid from an initial state coating at least one of the conductive elements to permit contact between the conductive elements, and movement of the first layer and the second layer away from each other returns the thixotropic liquid to the initial state.

A method includes coating at least one conductive element of an electronic device with an electrically non-conductive thixotropic liquid. An electronic device includes a first layer including an upper conductive element, a second layer including a lower conductive element, and a spacer positioned between the layers. The first layer, the second layer, and the spacer define a sensing chamber in which the upper and lower conductive elements move to vary the resistance of the electronic device. A non-conductive thixotropic liquid is present within the sensing chamber. Movement of the layers toward each other displaces the thixotropic liquid from an initial state coating at least one of the conductive elements to permit contact between the conductive elements, and movement of the first layer and the second layer away from each other returns the thixotropic liquid to the initial state.

Pressure/strain piezoresistive are described that include a poled piezoelectric polymer such as PVDF or P(VDF-TrFE) and graphene. The poled piezoelectric polymer and the graphene are electronically coupled to form a heterojunction and provide an ultra-high sensitivity pressure/strain sensor. The sensors can be carried on a flexible supporting substrate such as PDMS or PET to exhibit high flexibility. The materials of formation can be biocompatible and the sensors can be wearable or implantable.

Pressure/strain piezoresistive are described that include a poled piezoelectric polymer such as PVDF or P(VDF-TrFE) and graphene. The poled piezoelectric polymer and the graphene are electronically coupled to form a heterojunction and provide an ultra-high sensitivity pressure/strain sensor. The sensors can be carried on a flexible supporting substrate such as PDMS or PET to exhibit high flexibility. The materials of formation can be biocompatible and the sensors can be wearable or implantable.

A bending sensor includes a flexible substrate made of polyimide; a laser-induced graphene electrode formed into a top surface of the flexible substrate; and first and second pads formed as a laser-induced graphene into the top surface of the flexible substrate, wherein the first and second pads are in electrical contact with the laser-induced graphene electrode. A bending of the flexible substrate and the laser-induced graphene electrode changes a resistivity of the laser-induced graphene electrode, which is indicative of an amount of bending.

A bending sensor includes a flexible substrate made of polyimide; a laser-induced graphene electrode formed into a top surface of the flexible substrate; and first and second pads formed as a laser-induced graphene into the top surface of the flexible substrate, wherein the first and second pads are in electrical contact with the laser-induced graphene electrode. A bending of the flexible substrate and the laser-induced graphene electrode changes a resistivity of the laser-induced graphene electrode, which is indicative of an amount of bending.

The present strain gauge includes a substrate having flexibility; a resistor formed from a material containing at least one of chromium and nickel, on the substrate; and an oxidation impeding layer formed on a non-oxidized surface corresponding to an upper surface of the resistor.

The present strain gauge includes a substrate having flexibility; a resistor formed from a material containing at least one of chromium and nickel, on the substrate; and an oxidation impeding layer formed on a non-oxidized surface corresponding to an upper surface of the resistor.

A pressure sensitive electrically conductive composition comprises a contained quantity of magnetite particles, wherein the quantity of magnetite particles includes a distribution of particle sizes between sub-micron and tens of microns, and wherein the magnetite particles have a plurality of planar faces, adjacent planar faces connected at a vertex, the particles each having a plurality of vertices wherein the magnetite particles are irregular in shape and have a low aspect ratio.

A microelectromechanical force/pressure sensor has: a sensor die, of semiconductor material, having a front surface and a bottom surface, extending in a horizontal plane, and made of a compact bulk region having a thickness along a vertical direction, transverse to the horizontal plane; piezoresistive elements, integrated in the bulk region of the sensor die, at the front surface thereof; and a cap die, coupled above the sensor die, covering the piezoresistive elements, having a respective front surface and bottom surface, opposite to each other along the vertical direction, the bottom surface facing the front surface of the sensor die. A conversion layer is arranged between the front surface of the sensor die and the bottom surface of the cap die, patterned to define a groove traversing its entire thickness along the vertical direction; the piezoresistive elements are arranged vertically in correspondence to the groove and the conversion layer is designed to convert a load applied to the front surface of the cap die and/or bottom surface of the sensor die along the vertical direction into a planar stress distribution at the groove, acting in the horizontal plane.