Provided are a thermistor which can have a satisfactory thermistor film using a metal substrate as well as a high humidity resistance and heat resistance; a method for producing the same; and a thermistor sensor. The thermistor according to the present invention includes a metal substrate 2, an insulating base film 3 formed on the metal substrate, and a thermistor film 4 formed on the insulating base film, wherein the insulating base film is formed so as to fill the irregularities on the surface of the metal substrate where the surface roughness of the insulating base film is lower than that of the metal substrate. In the method for producing this thermistor includes the steps of: applying polysilazane on the metal substrate; drying the polysilazane to form the insulating base film of SiO.sub.x containing nitrogen; and depositing the thermistor film on the insulating base film.

Provided are a thermistor which can have a satisfactory thermistor film using a metal substrate as well as a high humidity resistance and heat resistance; a method for producing the same; and a thermistor sensor. The thermistor according to the present invention includes a metal substrate 2, an insulating base film 3 formed on the metal substrate, and a thermistor film 4 formed on the insulating base film, wherein the insulating base film is formed so as to fill the irregularities on the surface of the metal substrate where the surface roughness of the insulating base film is lower than that of the metal substrate. In the method for producing this thermistor includes the steps of: applying polysilazane on the metal substrate; drying the polysilazane to form the insulating base film of SiO.sub.x containing nitrogen; and depositing the thermistor film on the insulating base film.

A resistor includes an elongated cylindrical body having nodes and elongated members. The elongated members interconnect the nodes to form openings between the nodes and the elongated members for the flow therethrough of a cooling fluid. The body is configured to receive electric current from a powered system and to conduct and provide electric resistance to the electric current to dissipate at least part of the electric current as heat from the body. The body also is configured to be coupled with at least one other resistor of the powered system in one or more of a parallel or series arrangement in an electric circuit.

A The heating element structure includes: a conductive metal substrate; a heating layer spaced apart from the conductive metal substrate and configured to generate heat in response to an electrical signal; electrodes in contact with the heating layer and configured to provide the electrical signal to the heating layer; and a first insulating layer on the conductive metal substrate, the first insulating layer comprising a first matrix material and a particle, wherein a difference between a coefficient of thermal expansion (CTE) of the first matrix material and a coefficient of thermal expansion of the particle is about 410.sup.6 per Kelvin or less.

A The heating element structure includes: a conductive metal substrate; a heating layer spaced apart from the conductive metal substrate and configured to generate heat in response to an electrical signal; electrodes in contact with the heating layer and configured to provide the electrical signal to the heating layer; and a first insulating layer on the conductive metal substrate, the first insulating layer comprising a first matrix material and a particle, wherein a difference between a coefficient of thermal expansion (CTE) of the first matrix material and a coefficient of thermal expansion of the particle is about 410.sup.6 per Kelvin or less.

A resistor of a powered system includes an elongated body that extends from a first terminal end to an opposite second terminal end. The body forms a continuous path that extends from the first terminal end to the second terminal end and that forms a disc. The body is configured to receive electric current from the powered system at the first terminal end and conduct and provide electric resistance to the electric current received from the powered system to dissipate at least part of the electric current as heat from the body. The second terminal end of the body is configured to be coupled with at least one other resistor of the powered system in one or more of a parallel or series arrangement in an electric circuit.

A resistor of a powered system includes an elongated body that extends from a first terminal end to an opposite second terminal end. The body forms a continuous path that extends from the first terminal end to the second terminal end and that forms a disc. The body is configured to receive electric current from the powered system at the first terminal end and conduct and provide electric resistance to the electric current received from the powered system to dissipate at least part of the electric current as heat from the body. The second terminal end of the body is configured to be coupled with at least one other resistor of the powered system in one or more of a parallel or series arrangement in an electric circuit.

A method of forming a heater assembly for use in semiconductor processing includes thermally securing a heater substrate to an application substrate; and applying a layered heater having at least one functional layer to the heater substrate after the heater substrate is secured to the application substrate. The heater substrate defines a material having a coefficient of thermal expansion that is matched to a coefficient of thermal expansion of the functional layer. The material of the functional layer is not capable of withstanding the elevated temperature of the thermal securing step.

A method of forming a heater assembly for use in semiconductor processing includes thermally securing a heater substrate to an application substrate; and applying a layered heater having at least one functional layer to the heater substrate after the heater substrate is secured to the application substrate. The heater substrate defines a material having a coefficient of thermal expansion that is matched to a coefficient of thermal expansion of the functional layer. The material of the functional layer is not capable of withstanding the elevated temperature of the thermal securing step.

A film resistor and a film sensor are disclosed. In an embodiment a film resistor includes a piezoresistive layer comprising a M.sub.1+nAX.sub.n phase, wherein M comprises at least one transition metal, A comprises a main-group element, and X comprises carbon and/or nitrogen, and wherein n=1, 2 or 3.