An NTC ceramic part, an electronic component for inrush current limiting, and a method for manufacturing an electronic component are disclosed. In an embodiment, an NTC ceramic part for use in an electronic component for inrush current limiting is disclosed, wherein the NTC ceramic part has an electrical resistance in the mΩ range at a temperature of 25° C. and/or at room temperature.

In a metal plate resistor according to the present disclosure, each of a pair of electrodes includes a first portion and a second portion. The first portion protrudes from one surface of a resistive element to be in contact with an end of a protection film. The second portion is disposed in a corresponding recess of a pair of recesses. In a direction in which the pair of electrodes is arranged, the second portion has a length longer than a length of the first portion.

In a metal plate resistor according to the present disclosure, each of a pair of electrodes includes a first portion and a second portion. The first portion protrudes from one surface of a resistive element to be in contact with an end of a protection film. The second portion is disposed in a corresponding recess of a pair of recesses. In a direction in which the pair of electrodes is arranged, the second portion has a length longer than a length of the first portion.

A lead-free glass paste, a chip resistor and a method for producing the same are provided. The lead-free glass paste includes 6-7 parts by mass of borosilicate oil, 12-21 parts by mass of aluminum oxide powder, 2-3 parts by mass of glass fiber powder, and 0.1-0.5 parts by mass of a curing agent.

A lead-free glass paste, a chip resistor and a method for producing the same are provided. The lead-free glass paste includes 6-7 parts by mass of borosilicate oil, 12-21 parts by mass of aluminum oxide powder, 2-3 parts by mass of glass fiber powder, and 0.1-0.5 parts by mass of a curing agent.

Provided is a varistor assembly capable of achieving good surge breakdown voltage while suppressing capacitance. The varistor assembly is obtained by connecting a plurality of varistor elements in parallel. Each varistor element includes: a sintered body obtained by sintering a laminate in which varistor layers and internal electrodes are alternately laminated; and a pair of external electrodes provided in a state where the internal electrodes are alternately connected on at least both end faces of this sintered body. Varistor element includes at least a plurality of first group varistor elements in which a value obtained by dividing a surface area of the sintered body by a volume of the sintered body is 1.9 mm.sup.−1 or more.

Provided is a varistor assembly capable of achieving good surge breakdown voltage while suppressing capacitance. The varistor assembly is obtained by connecting a plurality of varistor elements in parallel. Each varistor element includes: a sintered body obtained by sintering a laminate in which varistor layers and internal electrodes are alternately laminated; and a pair of external electrodes provided in a state where the internal electrodes are alternately connected on at least both end faces of this sintered body. Varistor element includes at least a plurality of first group varistor elements in which a value obtained by dividing a surface area of the sintered body by a volume of the sintered body is 1.9 mm.sup.−1 or more.

A varistor includes an effective layer having first and second surfaces opposite to each other, a first ineffective layer stacked on the first surface of the effective layer, a second ineffective layer stacked on the second surface of the effective layer, and an external electrode. The effective layer includes a ceramic layer having a polycrystalline structure including crystal particles exhibiting voltage nonlinear characteristics, and internal electrodes stacked alternately on the ceramic layer. The thickness of the second ineffective layer is equal to or more than 1.1 times a thickness of the first ineffective layer and equal to or smaller than 6 times the thickness of the first ineffective layer. This varistor has a small size and excellent surge resistance.

A varistor includes an effective layer having first and second surfaces opposite to each other, a first ineffective layer stacked on the first surface of the effective layer, a second ineffective layer stacked on the second surface of the effective layer, and an external electrode. The effective layer includes a ceramic layer having a polycrystalline structure including crystal particles exhibiting voltage nonlinear characteristics, and internal electrodes stacked alternately on the ceramic layer. The thickness of the second ineffective layer is equal to or more than 1.1 times a thickness of the first ineffective layer and equal to or smaller than 6 times the thickness of the first ineffective layer. This varistor has a small size and excellent surge resistance.

A method for mass-manufacturing of a miniature resistor includes the steps of: providing a foil sheet; forming intersecting rows of slits to define a patterned foil sheet having a matrix array of resistor blanks that are interconnected at intersections of the intersecting rows; forming first and second photoresist films on the patterned foil sheet; forming holes in the first photoresist film; forming protruding blocks to fill the holes; removing the first and second photoresist films; encapsulating the patterned foil sheet and the protruding blocks without covering outer surfaces of the protruding blocks; performing a cutting process to obtain individual resistor blanks; and forming two external electrodes respectively on the protruding blocks and on two side surfaces of the individual resistor blank to obtain the miniature resistor.