A sintered body that includes ceramic layers and an internal electrode which are alternately stacked on one another is prepared. A first external electrode is formed on a side surface of the sintered body such that the first external electrode is connected to the internal electrode. An insulating layer is formed on a surface of the sintered body by applying a glass coating over an entire of the sintered body having the formed first external electrode. The insulating layer is exposed from the first external electrode. A second external electrode is formed on the first external electrode. This method provides the produced multilayer electronic component with a stable electric connection between the internal electrodes and the external electrodes.

A sintered body that includes ceramic layers and an internal electrode which are alternately stacked on one another is prepared. A first external electrode is formed on a side surface of the sintered body such that the first external electrode is connected to the internal electrode. An insulating layer is formed on a surface of the sintered body by applying a glass coating over an entire of the sintered body having the formed first external electrode. The insulating layer is exposed from the first external electrode. A second external electrode is formed on the first external electrode. This method provides the produced multilayer electronic component with a stable electric connection between the internal electrodes and the external electrodes.

A thermistor material composed of Ca.sub.1-xYb.sub.xCeNbWO.sub.8(0≤x≤0.2) can be used in a wide temperature range from 25 to 800° C. It is made from high-pure CaCO.sub.3, CeO.sub.2, NbO.sub.5, WO.sub.3 and Yb.sub.2O.sub.3. These ceramic materials with a scheelite structure can be obtained after mixing, grinding, calcination, pressing, cold isostatic pressing and high-temperature sintering, etc. The values of material constant B.sub.300° C./600° C. and ρ.sub.25° C. of thermistor materials are in the range of 6465K-6732K, 4.06×10.sup.7Ω.cm-8.63×10.sup.7Ω.cm. The thermistor material has a good thermostability and significant negative temperature coefficient (NTC) characteristic in the temperature range of 25° C. to 800° C., could be used as a potential for fabricating high-temperature thermistor sensors.

Provided are a thermistor element including a conductive intermediate layer containing RuO.sub.2 which can have a lower resistance and a thinner profile, whereby the increase in resistance can be suppressed even when peeling of the electrode proceeds; and a method for producing the same. The thermistor element according to the present invention includes: a thermistor body 2 made of a thermistor material; a conductive intermediate layer 4 formed on the thermistor body; and an electrode layer 5 formed on the conductive intermediate layer, wherein the conductive intermediate layer has an aggregation structure of RuO.sub.2 particles that are in electrical contact with each other where SiO.sub.2 is placed in the gaps in the aggregation structure, and has a thickness of 100 to 1000 nm.

A method includes blending a dielectric material including a titanate with a carbon-based ink to form a modified carbon-based ink. The method also includes printing the modified carbon-based ink onto a structure. The method further includes curing the printed modified carbon-based ink on the structure at a temperature that does not exceed about 250° C. In addition, the method includes processing the cured printed modified carbon-based ink to form a thick film resistor. Blending the dielectric material with the carbon-based ink causes the modified carbon-based ink to have a resistivity that is at least double a resistivity of the carbon-based ink.

A process is provided for forming an integrated thin film resistor (TFR) in an integrated circuit (IC) device including IC elements and IC element contacts. A TFR film layer and TFR dielectric layer are formed over the IC structure, and a wet etch is performed to define a dielectric cap with sloped lateral edges over the TFR film layer. Exposed portions of the TFR film layer are etched to define a TFR element. A TFR contact etch forms contact openings over the TFR element, and a metal layer is formed to form metal layer connections to the IC element contacts and the TFR element. The sloped edges of the dielectric cap may improve the removal of metal adjacent the TFR element to prevent electrical shorts in the completed device. A TFR anneal to reduce a TCR of the TFR is performed at any suitable time before forming the metal layer.

A process is provided for forming an integrated thin film resistor (TFR) in an integrated circuit (IC) device including IC elements and IC element contacts. A TFR film layer and TFR dielectric layer are formed over the IC structure, and a wet etch is performed to define a dielectric cap with sloped lateral edges over the TFR film layer. Exposed portions of the TFR film layer are etched to define a TFR element. A TFR contact etch forms contact openings over the TFR element, and a metal layer is formed to form metal layer connections to the IC element contacts and the TFR element. The sloped edges of the dielectric cap may improve the removal of metal adjacent the TFR element to prevent electrical shorts in the completed device. A TFR anneal to reduce a TCR of the TFR is performed at any suitable time before forming the metal layer.

A method is provided for forming a thin film resistor (TFR) in an integrated circuit (IC) device. A TFR film is formed and annealed over an IC structure including IC elements and IC element contacts. At least one TFR cap layer is formed, and a TFR etch defines a TFR element from the TFR film. A TFR contact etch forms TFR contact openings over the TFR element, and a metal layer is formed over the IC structure and extending into the TFR contact openings to form metal contacts to the IC element contacts and the TFR element. The TFR cap layer(s), e.g., SiN cap and/or oxide cap formed over the TFR film, may (a) provide an etch stop during the TFR contact etch and/or (b) provide a hardmask during the TFR etch, which may eliminate the use of a photomask and thereby eliminate post-etch removal of photomask polymer.

A method is provided for forming a thin film resistor (TFR) in an integrated circuit (IC) device. A TFR film is formed and annealed over an IC structure including IC elements and IC element contacts. At least one TFR cap layer is formed, and a TFR etch defines a TFR element from the TFR film. A TFR contact etch forms TFR contact openings over the TFR element, and a metal layer is formed over the IC structure and extending into the TFR contact openings to form metal contacts to the IC element contacts and the TFR element. The TFR cap layer(s), e.g., SiN cap and/or oxide cap formed over the TFR film, may (a) provide an etch stop during the TFR contact etch and/or (b) provide a hardmask during the TFR etch, which may eliminate the use of a photomask and thereby eliminate post-etch removal of photomask polymer.

An object of the present disclosure is to provide the preparation and application of a low-B high-resistance high-temperature thermistor material with wide temperature range. The thermistor material uses CaCO.sub.3, Y.sub.2O.sub.3, Nb.sub.2O.sub.5, CeO.sub.2 and MoO.sub.3 as raw materials. The Ca.sub.1-yY.sub.yMoO.sub.4-xCeNbO.sub.4 (1≤x≤3, 0.01≤y≤0.2) high-temperature thermistor material having low-B high-resistance and wide temperature region is obtained by mixing grinding, calcination, cold isostatic pressing, high-temperature sintering and coating electrode. The material constant B.sub.200° C./600° C. is 1800 K-4000 K, and the resistivity at 25° C. is 8.0×10.sup.5 Ω.Math.cm-6.0×10.sup.7 Ω.Math.cm. The low-B high-resistance wide temperature range high-temperature thermistor material prepared by the disclosure has stable performance and good consistency. The thermistor material has obvious negative temperature coefficient characteristics in the range of 25° C.-1000° C. and is suitable for manufacturing wide temperature range high-temperature thermistor.