In a thermistor element, a thermistor body formed of a thermistor material, a conductive interlayer formed on the thermistor body, and an electrode layer formed on the conductive interlayer are provided, the conductive interlayer is formed along protrusions and recesses on a surface of the thermistor body, the conductive interlayer is a layer in which RuO.sub.2 grains in contact with each other are uniformly distributed and SiO.sub.2 interposes in gaps between the RuO.sub.2 grains, and the conductive interlayer is formed in a state of adhering to the thermistor body along the protrusions and the recesses on the surface of the thermistor body.

In a thermistor element, a thermistor body formed of a thermistor material, a conductive interlayer formed on the thermistor body, and an electrode layer formed on the conductive interlayer are provided, the conductive interlayer is formed along protrusions and recesses on a surface of the thermistor body, the conductive interlayer is a layer in which RuO.sub.2 grains in contact with each other are uniformly distributed and SiO.sub.2 interposes in gaps between the RuO.sub.2 grains, and the conductive interlayer is formed in a state of adhering to the thermistor body along the protrusions and the recesses on the surface of the thermistor body.

In a thermistor element, a thermistor body formed of a thermistor material, a conductive interlayer formed on the thermistor body, and an electrode layer formed on the conductive interlayer are provided, the conductive interlayer is formed along protrusions and recesses on a surface of the thermistor body, the conductive interlayer is a layer in which RuO.sub.2 grains in contact with each other are uniformly distributed and SiO.sub.2 interposes in gaps between the RuO.sub.2 grains, and the conductive interlayer is formed in a state of adhering to the thermistor body along the protrusions and the recesses on the surface of the thermistor body.

In a thermistor element, a thermistor body formed of a thermistor material, a conductive interlayer formed on the thermistor body, and an electrode layer formed on the conductive interlayer are provided, the conductive interlayer is formed along protrusions and recesses on a surface of the thermistor body, the conductive interlayer is a layer in which RuO.sub.2 grains in contact with each other are uniformly distributed and SiO.sub.2 interposes in gaps between the RuO.sub.2 grains, and the conductive interlayer is formed in a state of adhering to the thermistor body along the protrusions and the recesses on the surface of the thermistor body.

In an embodiment a ceramic material includes ZnO as main constituent, Y as a first additive, second additives including at least one compound containing a metal element, wherein the metal element is selected from the group consisting of Bi, Cr, Co, Mn, Ni and Sb, Si.sup.4+ as a first dopant and second dopants having at least one compound containing a metal cation from Al.sup.3+, B.sup.3+, or Ba.sup.2+, wherein a corresponds to a molar proportion of Bi calculated as Bi.sub.2O.sub.3, b corresponds to a molar proportion of Y calculated as Y.sub.2O.sub.3, c corresponds to a molar proportion of Al calculated as Al.sub.2O.sub.3, d corresponds to a molar proportion of Ba calculated as BaO, e corresponds to a molar proportion of B calculated as B.sub.2O.sub.3, f corresponds to a molar proportion of Si calculated as SiO.sub.2, g corresponds to a molar proportion of Ni calculated as NiO, h corresponds to a molar proportion of Co calculated as Co.sub.3O.sub.4, i corresponds to a molar proportion of Cr calculated as Cr.sub.2O.sub.3, j corresponds to a molar proportion of Sb calculated as Sb.sub.2O.sub.3, and k corresponds to a molar proportion of Mn calculated as Mn.sub.3O.sub.4.

A method of making a heater includes an aluminum nitride base having equal to or less than 1% impurities, particularly one embodiment having none of polybrominated biphenyl, polybrominated diphenyl ether, hexabromocyclododecane, polyvinyl chloride, chlorinated paraffin, phthalate, cadmium, hexavalent chromium, lead, and mercury. The base is fired in a heating unit before any layering. Thereafter, on a topside and backside of the base a conductor layer is layered and allowed to settle and dry before firing. Next, a resistive layer is layered on the base from a resistor paste such that the resistive layer connects to the conductor layer on the topside. The resistor paste is allowed to settle and dry and then the base with the conductor and resistor layers is fired. At least four layers of glass are layered next over the resistive layer, each instance thereof including layering a glass, drying the glass and firing.

A method of making a heater includes an aluminum nitride base having equal to or less than 1% impurities, particularly one embodiment having none of polybrominated biphenyl, polybrominated diphenyl ether, hexabromocyclododecane, polyvinyl chloride, chlorinated paraffin, phthalate, cadmium, hexavalent chromium, lead, and mercury. The base is fired in a heating unit before any layering. Thereafter, on a topside and backside of the base a conductor layer is layered and allowed to settle and dry before firing. Next, a resistive layer is layered on the base from a resistor paste such that the resistive layer connects to the conductor layer on the topside. The resistor paste is allowed to settle and dry and then the base with the conductor and resistor layers is fired. At least four layers of glass are layered next over the resistive layer, each instance thereof including layering a glass, drying the glass and firing.

A method includes blending a dielectric material including a titanate with a carbon-based ink to form a modified carbon-based ink. The method also includes printing the modified carbon-based ink onto a structure. The method further includes curing the printed modified carbon-based ink on the structure at a temperature that does not exceed about 250 C. In addition, the method includes processing the cured printed modified carbon-based ink to form a thick film resistor. Blending the dielectric material with the carbon-based ink causes the modified carbon-based ink to have a resistivity that is at least double a resistivity of the carbon-based ink.

A method includes blending a dielectric material including a titanate with a carbon-based ink to form a modified carbon-based ink. The method also includes printing the modified carbon-based ink onto a structure. The method further includes curing the printed modified carbon-based ink on the structure at a temperature that does not exceed about 250 C. In addition, the method includes processing the cured printed modified carbon-based ink to form a thick film resistor. An amount of the dielectric material blended with the carbon-based ink does not exceed about 15% by weight of the modified carbon-based ink. The modified carbon-based ink has a resistivity that is at least double a resistivity of the carbon-based ink. The thick film resistor may be configured to handle up to about 200 mA of current without fusing and/or handle up to about 1.0 W of power without fusing.

Provided are a thermistor element including a conductive intermediate layer containing RuO.sub.2 which can have a lower resistance and a thinner profile, whereby the increase in resistance can be suppressed even when peeling of the electrode proceeds; and a method for producing the same. The thermistor element according to the present invention includes: a thermistor body 2 made of a thermistor material; a conductive intermediate layer 4 formed on the thermistor body; and an electrode layer 5 formed on the conductive intermediate layer, wherein the conductive intermediate layer has an aggregation structure of RuO.sub.2 particles that are in electrical contact with each other where SiO.sub.2 is placed in the gaps in the aggregation structure, and has a thickness of 100 to 1000 nm.