A multilayer varistor includes a sintered body, a first external electrode, a second external electrode, a first internal electrode, a second internal electrode, and a high-resistivity portion. The first internal electrode is provided inside the sintered body and electrically connected to the first external electrode. The second internal electrode is provided inside the sintered body and electrically connected to the second external electrode. The high-resistivity portion includes: a surface high-resistivity portion provided to cover a surface of the sintered body; and an inner high-resistivity portion extended inward from the surface high-resistivity portion inside the sintered body.

A multilayer varistor includes a sintered body, a first external electrode, a second external electrode, a first internal electrode, a second internal electrode, and a high-resistivity portion. The first internal electrode is provided inside the sintered body and electrically connected to the first external electrode. The second internal electrode is provided inside the sintered body and electrically connected to the second external electrode. The high-resistivity portion includes: a surface high-resistivity portion provided to cover a surface of the sintered body; and an inner high-resistivity portion extended inward from the surface high-resistivity portion inside the sintered body.

A method of making a heater includes an aluminum nitride base having equal to or less than 1% impurities, particularly one embodiment having none of polybrominated biphenyl, polybrominated diphenyl ether, hexabromocyclododecane, polyvinyl chloride, chlorinated paraffin, phthalate, cadmium, hexavalent chromium, lead, and mercury. The base is fired in a heating unit before any layering. Thereafter, on a topside and backside of the base a conductor layer is layered and allowed to settle and dry before firing. Next, a resistive layer is layered on the base from a resistor paste such that the resistive layer connects to the conductor layer on the topside. The resistor paste is allowed to settle and dry and then the base with the conductor and resistor layers is fired. At least four layers of glass are layered next over the resistive layer, each instance thereof including layering a glass, drying the glass and firing.

A method of making a heater includes an aluminum nitride base having equal to or less than 1% impurities, particularly one embodiment having none of polybrominated biphenyl, polybrominated diphenyl ether, hexabromocyclododecane, polyvinyl chloride, chlorinated paraffin, phthalate, cadmium, hexavalent chromium, lead, and mercury. The base is fired in a heating unit before any layering. Thereafter, on a topside and backside of the base a conductor layer is layered and allowed to settle and dry before firing. Next, a resistive layer is layered on the base from a resistor paste such that the resistive layer connects to the conductor layer on the topside. The resistor paste is allowed to settle and dry and then the base with the conductor and resistor layers is fired. At least four layers of glass are layered next over the resistive layer, each instance thereof including layering a glass, drying the glass and firing.

A heater includes an aluminum nitride base having equal to or less than 1% impurities, particularly one embodiment having none of polybrominated biphenyl, polybrominated diphenyl ether, hexabromocyclododecane, polyvinyl chloride, chlorinated paraffin, phthalate, cadmium, hexavalent chromium, lead, and mercury. At least one resistive trace of silver and palladium overlies the base as does a conductor of silver and platinum or palladium that electrically connects to the resistive trace to apply an external voltage to the resistive trace for heating thereof. At least four, but optionally five, layers of glass overlie the resistive trace and part of the conductor. A first two consecutive layers of the glass layers define a first glass having a solid content of more than 65% and a viscosity of 100 Pa.Math.s or less. The following two or three consecutive layers of the five layers define a second glass dissimilar to the first.

A The heating element structure includes: a conductive metal substrate; a heating layer spaced apart from the conductive metal substrate and configured to generate heat in response to an electrical signal; electrodes in contact with the heating layer and configured to provide the electrical signal to the heating layer; and a first insulating layer on the conductive metal substrate, the first insulating layer comprising a first matrix material and a particle, wherein a difference between a coefficient of thermal expansion (CTE) of the first matrix material and a coefficient of thermal expansion of the particle is about 410.sup.6 per Kelvin or less.

A The heating element structure includes: a conductive metal substrate; a heating layer spaced apart from the conductive metal substrate and configured to generate heat in response to an electrical signal; electrodes in contact with the heating layer and configured to provide the electrical signal to the heating layer; and a first insulating layer on the conductive metal substrate, the first insulating layer comprising a first matrix material and a particle, wherein a difference between a coefficient of thermal expansion (CTE) of the first matrix material and a coefficient of thermal expansion of the particle is about 410.sup.6 per Kelvin or less.

A sintered body that includes semiconductor ceramic layers and an internal electrode which are alternately stacked on one another is prepared. A first external electrode is formed on a side surface of the sintered body such that the first external electrode is connected to the internal electrode. An insulating layer is formed on a surface of the sintered body by applying a glass coating over an entire of the sintered body having the formed first external electrode. The insulating layer is exposed from the first external electrode. A second external electrode is formed on the first external electrode. This method provides the produced multilayer electronic component with a stable electric connection between the internal electrodes and the external electrodes.

A sintered body that includes semiconductor ceramic layers and an internal electrode which are alternately stacked on one another is prepared. A first external electrode is formed on a side surface of the sintered body such that the first external electrode is connected to the internal electrode. An insulating layer is formed on a surface of the sintered body by applying a glass coating over an entire of the sintered body having the formed first external electrode. The insulating layer is exposed from the first external electrode. A second external electrode is formed on the first external electrode. This method provides the produced multilayer electronic component with a stable electric connection between the internal electrodes and the external electrodes.

A process is provided for forming an integrated thin film resistor (TFR) in an integrated circuit (IC) device including IC elements and IC element contacts. A TFR film layer and TFR dielectric layer are formed over the IC structure, and a wet etch is performed to define a dielectric cap with sloped lateral edges over the TFR film layer. Exposed portions of the TFR film layer are etched to define a TFR element. A TFR contact etch forms contact openings over the TFR element, and a metal layer is formed to form metal layer connections to the IC element contacts and the TFR element. The sloped edges of the dielectric cap may improve the removal of metal adjacent the TFR element to prevent electrical shorts in the completed device. A TFR anneal to reduce a TCR of the TFR is performed at any suitable time before forming the metal layer.