The present invention includes a method of creating electrical air gap low loss low cost RF mechanically and thermally stabilized interdigitated resonate filter in photo definable glass ceramic substrate. Where a ground plane may be used to adjacent to or below the RF filter in order to prevent parasitic electronic signals, RF signals, differential voltage build up and floating grounds from disrupting and degrading the performance of isolated electronic devices by the fabrication of electrical isolation and ground plane structures on a photo-definable glass substrate.

The present invention provides an integrated electro-mechanical actuator and a manufacturing method for manufacturing such an integrated electro-mechanical actuator. The integrated electro-mechanical actuator comprises an electrostatic actuator gap between actuator electrodes and an electrical contact gap between contact electrodes. An inclination with an inclination angle is provided between the actuator electrodes and the contact electrodes. The thickness of this electrical contact gap is equal to the thickness of a sacrificial layer which is etched away in a manufacturing process.

The disclosure is directed to microelectromechanical system (MEMS) switches with multiple pull-down electrodes between terminal electrodes to limit off-state capacitance. In exemplary aspects disclosed herein, a plurality of pull-down electrodes are positioned between the input terminal electrode and the output terminal electrode. The plurality of pull-down electrodes are offset from each other to limit off-state capacitance between the input terminal electrode and the output terminal electrode. The separation between the pull-down electrodes disrupts the off-state capacitive path between the input terminal electrode and the output terminal electrode, thereby further insulating the contacts from each other. Limiting off-state capacitance reduces on-state electrical loss and increases off-state electrical isolation for improved performance.

An electrical arrangement for performing radio frequency isolation for microelectromechanical relay switches. A microelectromechanical relay switch comprises a beam configured to switch from a first position connected to an upper voltage source to a second position connected to a lower voltage source. The microelectromechanical relay switch further comprises at least one frequency isolation circuit or resistor disposed adjacent to the beam. The at least one frequency isolation circuit or resistor biases a direct current potential to allow for electrostatic actuation and further provides a path for transient electrical currents during switching.

The disclosure is directed to microelectromechanical system (MEMS) switches with multiple pull-down electrodes between terminal electrodes to limit off-state capacitance. In exemplary aspects disclosed herein, a plurality of pull-down electrodes are positioned between the input terminal electrode and the output terminal electrode. The plurality of pull-down electrodes are offset from each other to limit off-state capacitance between the input terminal electrode and the output terminal electrode. The separation between the pull-down electrodes disrupts the off-state capacitive path between the input terminal electrode and the output terminal electrode, thereby further insulating the contacts from each other. Limiting off-state capacitance reduces on-state electrical loss and increases off-state electrical isolation for improved performance.

Various embodiments of the teachings herein include an electronic module comprising a microelectromechanical system (MEMS) switch with a substrate and a semiconductor component. The semiconductor component is formed with the substrate and connected to MEMS switch. The semiconductor component includes a diode. The substrate is formed from or with a silicon-on-insulator-wafer and/or silicon-on-insulator substrate.

A MEMS switch includes: a housing, a switching assembly; a first actuation electrode, a first contact, a second contact, and a second actuation electrode. The switching device has a stress gradient along the thickness direction, such that in response to applying no voltage between the first actuation electrode and the second actuation electrode, the switching assembly contacts with the first contact. In response to applying a first voltage between the third actuation electrode and the fourth actuation electrode, the switching assembly is driven to deflect such that the switching assembly is spaced apart from both the first contact and the second contact. In response to applying a second voltage between the third actuation electrode and the fourth actuation electrode, the switching assembly is driven to deflect such that the switching assembly contacts with the second contact. The first voltage is smaller than the third voltage.

Devices, systems, methods, computer-implemented methods, apparatus, and/or computer program products that can facilitate a switch device that shifts frequency of a resonator in a quantum device are provided. According to an embodiment, a device can comprise a readout resonator coupled to a qubit. The device can further comprise a switch device formed across the readout resonator that shifts frequency of the readout resonator based on position of the switch device. According to another embodiment, a device can comprise a bus resonator coupled to a plurality of qubits. The device can further comprise a switch device formed across the bus resonator that shifts frequency of the bus resonator based on position of the switch device.

Optically isolated micromachined (MEMS) switches and related methods are described. The optically isolated MEMS switches described herein may be used to provide isolation between electronic devices. For example, the optically isolated MEMS switches of the types described herein can enable the use of separate grounds between the receiving electronic device and the control circuitry. Isolation of high-voltage signals and high-voltage power supplies can be achieved by using an optical isolator and a MEMS switch, where the optical isolator controls the state of the MEMS switch. In some embodiments, utilizing optical isolators to provide high voltages, the need for electric high-voltage sources such as high-voltage power supplies and charge pumps may be removed, thus removing the cause of potential damage to the receiving electronic device. In one example, the optical isolator and the MEMS switch may be co-packaged on the same substrate.

A semiconductor device including control switches enabling a semiconductor die in a stack of semiconductor die to send or receive a signal, while electrically isolating the remaining die in the die stack. Parasitic pin cap is reduced or avoided by electrically isolating the non-enabled semiconductor die in the die stack.