A low travel switch assembly and systems and methods for using the same are disclosed. The low travel dome may include a domed surface having upper and lower portions, and a set of tuning members integrated within the domed surface between the upper and lower portions. The tuning members may be operative to control a force-displacement curve characteristic of the low travel dome.

A switch includes a housing including a bottom surface and a protrusion formed on the bottom surface, a board that is placed on the bottom surface of the housing and includes a fixed contact, the board and the protrusion being fitted together, a movable contact that is disposed to cover at least portions of the fixed contact and the protrusion and configured to be inverted, and an operation part that presses the movable contact toward the fixed contact.

A key is disclosed herein. The key is disposed on a baseplate of a keyboard device, and comprises a sheet metal keycap and a supporting structure. The sheet metal keycap includes a body portion and two bending portions. The two bending portions are formed by extending downward from a side of two punching holes on the body portion, respectively. The supporting structure is disposed between the sheet metal keycap and the baseplate. Two sides of the supporting structure are pivotally connected to the bending portions and the baseplate, respectively. The key is thinner due to sheet metal keycap which is integratedly formed. A keyboard device with a plurality keys is also provided herein.

A switch includes a housing including a bottom surface and a protrusion formed on the bottom surface, a board that is placed on the bottom surface of the housing and includes a fixed contact, the board and the protrusion being fitted together, a movable contact that is disposed to cover at least portions of the fixed contact and the protrusion and configured to be inverted, and an operation part that presses the movable contact toward the fixed contact.

An electronic device and methods including a switch formed in a chip package are shown. An electronic device and methods including a switch formed in a polymer based dielectric are shown. Examples of switches shown include microelectromechanical system (MEMS) structures, such as cantilever switches and/or shunt switches.

A key is disclosed herein. The key is disposed on a baseplate of a keyboard device, and comprises a sheet metal keycap and a supporting structure. The sheet metal keycap includes a body portion and two bending portions. The two bending portions are formed by extending downward from a side of two punching holes on the body portion, respectively. The supporting structure is disposed between the sheet metal keycap and the baseplate. Two sides of the supporting structure are pivotally connected to the bending portions and the baseplate, respectively. The key is thinner due to sheet metal keycap which is integratedly formed. A keyboard device with a plurality keys is also provided herein.

An electronic device and methods including a switch formed in a chip package are shown. An electronic device and methods including a switch formed in a polymer based dielectric are shown. Examples of switches shown include microelectromechanical system (MEMS) structures, such as cantilever switches and/or shunt switches.

A semiconductor device can include first and second conductive layers that can be positioned over a substrate, and at least one dielectric layer between the first and second conductive layers. The at least one dielectric layer can be positioned over at least a portion of the second conductive layer, and the first conductive layer can be positioned over a portion of the least one dielectric layer. The semiconductor device can further include a third conductive layer that can be positioned over the substrate and can be conductively connected to the second conductive layer and the substrate. The third conductive layer includes a fusible link.

This description relates generally to semiconductor devices. A semiconductor device can include first and second conductive layers that can be positioned over a substrate, and at least one dielectric layer between the first and second conductive layers. The at least one dielectric layer can be positioned over at least a portion of the second conductive layer, and the first conductive layer can be positioned over a portion of the least one dielectric layer. The semiconductor device can further include a third conductive layer that can be positioned over the substrate and can be conductively connected to the second conductive layer and the substrate. The third conductive layer includes a fusible link.