An ion trap device is disclosed with a method of manufacturing thereof including a substrate, first and second RF electrode rails, first and second DC electrodes on either upper or lower side of substrate, and a laser penetration passage connected to ion trapping zone from outer side of the first or second side of substrate. The substrate includes ion trapping zone in space defined by first and second sides of substrate separated by a distance with reference to width direction of ion trap device. The first and second RF electrode rails are arranged in parallel longitudinally of ion trap device. The first RF electrode is arranged on upper side of first side, the second DC electrode is arranged on lower side of first side, the first DC electrode is arranged on upper side of second side, and the second RF electrode rail is arranged on lower side of second side.

An ion trap device is disclosed with a method of manufacturing thereof including a substrate, first and second RF electrode rails, first and second DC electrodes on either upper or lower side of substrate, and a laser penetration passage connected to ion trapping zone from outer side of the first or second side of substrate. The substrate includes ion trapping zone in space defined by first and second sides of substrate separated by a distance with reference to width direction of ion trap device. The first and second RF electrode rails are arranged in parallel longitudinally of ion trap device. The first RF electrode is arranged on upper side of first side, the second DC electrode is arranged on lower side of first side, the first DC electrode is arranged on upper side of second side, and the second RF electrode rail is arranged on lower side of second side.

A high-voltage power source for applying high voltage to a nozzle of an ESI ion source includes a charge release assistant section including switch circuits and other elements for forcing electric charges accumulated at output terminals to be discharged in a polarity-switching operation, whereby the positive/negative switching of the polarity of the output voltage can be quickly performed. For example, when the voltage applied to the nozzle needs to be changed from V.sub.1 to V.sub.2 (where V.sub.1 and V.sub.2 are positive, and V.sub.1>V.sub.2), a voltage control section operates a positive voltage generation section and negative voltage generation section so as to temporarily provide a negative output voltage. After a predetermined period of time, the voltage control section operates the positive voltage generation section and negative voltage generation section so as to provide voltage V.sub.2.

A high-voltage power source for applying high voltage to a nozzle of an ESI ion source includes a charge release assistant section including switch circuits and other elements for forcing electric charges accumulated at output terminals to be discharged in a polarity-switching operation, whereby the positive/negative switching of the polarity of the output voltage can be quickly performed. For example, when the voltage applied to the nozzle needs to be changed from V.sub.1 to V.sub.2 (where V.sub.1 and V.sub.2 are positive, and V.sub.1>V.sub.2), a voltage control section operates a positive voltage generation section and negative voltage generation section so as to temporarily provide a negative output voltage. After a predetermined period of time, the voltage control section operates the positive voltage generation section and negative voltage generation section so as to provide voltage V.sub.2.

The present invention relates to a device designed to prevent fine particles produced in a vacuum system from being adsorbed to a semiconductor substrate and a sample or prevent the fine particles from being adsorbed to a mask in a lithography device using the vacuum system and, more specifically, to an extreme ultraviolet lithography device not using a membrane type pellicle. An embodiment of a particle transfer blocking device according to the present invention comprises: a vacuum chamber in which an accommodation part is formed; and a barrier module which is provided in the vacuum chamber and divides the accommodation part of the chamber into a first region and a second region, wherein the barrier module is not a physical barrier but an electrical potential barrier serving to prevent predetermined particles located in the first region from transferring to the second region.

The present invention relates to a device designed to prevent fine particles produced in a vacuum system from being adsorbed to a semiconductor substrate and a sample or prevent the fine particles from being adsorbed to a mask in a lithography device using the vacuum system and, more specifically, to an extreme ultraviolet lithography device not using a membrane type pellicle. An embodiment of a particle transfer blocking device according to the present invention comprises: a vacuum chamber in which an accommodation part is formed; and a barrier module which is provided in the vacuum chamber and divides the accommodation part of the chamber into a first region and a second region, wherein the barrier module is not a physical barrier but an electrical potential barrier serving to prevent predetermined particles located in the first region from transferring to the second region.

A device for controlling trapped ions includes a substrate. An electrode structure is disposed on the substrate, the electrode structure including DC electrodes and RF electrodes of an ion trap configured to trap ions in a space above the substrate. A first device terminal is disposed on the substrate, the first device terminal being connected via a first electrode connection line to a specific DC electrode. Further, a second device terminal is disposed on the substrate, the second device terminal being connected via a second electrode connection line to the specific DC electrode.

A device for controlling trapped ions includes a substrate. An electrode structure is disposed on the substrate, the electrode structure including DC electrodes and RF electrodes of an ion trap configured to trap ions in a space above the substrate. A first device terminal is disposed on the substrate, the first device terminal being connected via a first electrode connection line to a specific DC electrode. Further, a second device terminal is disposed on the substrate, the second device terminal being connected via a second electrode connection line to the specific DC electrode.

A method for purifying particles generates charged particles from a sample, measures at least at least one of masses, charge magnitudes and mobilities of the generated charged particles, and selectively passes to a particle collection target each of the measured charged particles having at least one of (a) a measured mass equal to a selected mass or within a selected range of particle masses, (b) a measured charge magnitude equal to a selected charge magnitude or within a selected range of charge magnitudes, (c) a mass-to-charge ratio equal to a selected mass-to-charge ratio or within a selected range of mass-to-charge ratios, and (d) a measured mobility equal to a selected mobility or within a selected range of mobilities. In some embodiments, the collected particles may be harvested and amplified.

A method for purifying particles generates charged particles from a sample, measures at least at least one of masses, charge magnitudes and mobilities of the generated charged particles, and selectively passes to a particle collection target each of the measured charged particles having at least one of (a) a measured mass equal to a selected mass or within a selected range of particle masses, (b) a measured charge magnitude equal to a selected charge magnitude or within a selected range of charge magnitudes, (c) a mass-to-charge ratio equal to a selected mass-to-charge ratio or within a selected range of mass-to-charge ratios, and (d) a measured mobility equal to a selected mobility or within a selected range of mobilities. In some embodiments, the collected particles may be harvested and amplified.