A method of forming a radio frequency (RF) strap for use in a process chamber is provided. The method includes positioning a core strap including a first material that is electrically and thermally conductive in a first electrochemical bath. The first electrochemical bath includes a first solvent and a first plating precursor. The method further includes forming a first protective coating on an outer surface of the core strap, removing the first solvent and the first plating precursor from the core strap having the first protective coating formed thereon, post-treating the core strap having the first protective coating formed thereon, positioning the core strap having the first protective coating formed thereon in a second electrochemical bath, and forming a second protective coating on an outer surface of the first protective coating. The first protective coating includes nickel, the second electrochemical bath includes a second solvent and a second plating precursor, and the second protective coating includes gold.

A method for producing a radiation window includes patterning a photo resist structure onto a double-sided silicon wafer, plasma etching the silicon wafer to create an etched silicon wafer having a silicon supporting structure etched upon a first side of the double-sided silicon wafer, applying a silicon nitride thin film to the etched silicon wafer, patterning a photo resist structure and plasma etching a second side of the double-sided silicon wafer to create an initial window in the silicon nitride thin film, and wet etching the second side of the double-sided silicon wafer to release the silicon nitride thin film and supporting structure from the portion of the double-sided silicon wafer defined by the initial window.

The invention relates to a compound of formula I,

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R.sup.11, R.sup.21, A.sup.11, A, Z, X.sup.11, X.sup.21, Y.sup.11, Y.sup.12, Sp.sup.11, Sp.sup.21, o and p have one of the meanings as given in claim 1. The invention further relates to method of production of a compound of formula I, to the use of said compounds in LC media and to LC media comprising one or more compounds of formula I. Further, the invention relates to a method of production of such LC media, to the use of such media in LC devices, and to LC device comprising a LC medium according to the present invention. The present invention further relates to a process for the fabrication such liquid crystal display and to the use of the liquid crystal mixtures according to the invention for the fabrication of such liquid crystal display.

The invention relates to a method for manufacturing a multilayer radiation window for an X-ray measurement apparatus. The method comprises: producing a gas diffusion stop layer made of silicon nitride on a polished surface of a carrier; producing at least one combined layer on an opposite side of said gas diffusion stop layer than said carrier; attaching the combined structure comprising said carrier, said gas diffusion stop layer, said at least one combined layer to a region around an opening in a support structure with the at least one combined layer facing said support structure; and etching away said carrier. The at least one combined layer comprises: a light attenuation layer made of aluminium, and a strengthening layer. The invention relates also a radiation window manufactured with the method.

Embodiments of the invention provide a conductive coating on an insulator of an x-ray tube and a method for applying the conductive coating. The method may use a first process, such as brazing, to join a support to the insulator and a second process, such as vapor deposition, to apply the conductive coating onto a substrate surface of the insulator. The second process may be carried out after the first process without any damage to x-ray tube insulator assembly.

Embodiments of the invention provide a conductive coating on an insulator of an x-ray tube and a method for applying the conductive coating. The method may use a first process, such as brazing, to join a support to the insulator and a second process, such as vapor deposition, to apply the conductive coating onto a substrate surface of the insulator. The second process may be carried out after the first process without any damage to x-ray tube insulator assembly.

A channel electron multiplier having a high aspect ratio and differential coatings along its channel length is disclosed. The elongated tube has an input end, an output end, and an interior surface extending along the length of the tube between the input end and the output end. The channel electron multiplier also has first and second conductive layers formed on the interior surface of the tube. The first conductive layer is selected to provide a first electrical resistance, a first electron emission characteristic, or both, and the second conductive layer is selected to provide a second electrical resistance, a second electron emission characteristic, or both. A method of making a channel electron multiplier having two or more different conductive layers is also disclosed.

A channel electron multiplier having a high aspect ratio and differential coatings along its channel length is disclosed. The elongated tube has an input end, an output end, and an interior surface extending along the length of the tube between the input end and the output end. The channel electron multiplier also has first and second conductive layers formed on the interior surface of the tube. The first conductive layer is selected to provide a first electrical resistance, a first electron emission characteristic, or both, and the second conductive layer is selected to provide a second electrical resistance, a second electron emission characteristic, or both. A method of making a channel electron multiplier having two or more different conductive layers is also disclosed.

A product having at least one plasma lamp that includes plates that are approximately parallel, with at least one array of microcavities formed in a surface of at least one plate. When desirable, the plates are separated a fixed distance by spacers with at least one spacer being placed near the plate's edge to form a hermetic seal therewith. A gas makes contact with the microcavity array. Electrodes capable of delivering a time-varying voltage are located such that the application of the time-varying voltage interacts with the gas to form a glow discharge plasma in the microcavities and the fixed volume between the plates. The glow discharge plasma efficiently and uniformly emits radiation that is predominantly in the UV/VUV spectral range with at least a portion of the radiation being emitted from the plasma lamp.

The purpose of the present invention is to provide a lead-free glass composition in which crystallization is suppressed and which has a low softening point. This lead-free glass composition is characterized by containing silver oxide, tellurium oxide and vanadium oxide, and further containing at least one compound selected from among yttrium oxide, lanthanum oxide, cerium oxide, erbium oxide, ytterbium oxide, aluminum oxide, gallium oxide, indium oxide, iron oxide, tungsten oxide and molybdenum oxide as an additional component, and in that the content values (mol %) of silver oxide, tellurium oxide and vanadium oxide satisfy the relationships Ag.sub.2O>TeO.sub.2V.sub.2O.sub.5 and Ag.sub.5O2V.sub.2O.sub.5 when calculated in terms of the oxides, and in that the content of TeO.sub.2 is 25-37 mol. %.