Patent classifications
H01J37/02
Method and system for the removal and/or avoidance of contamination in charged particle beam systems
A charged particle beam system is disclosed, comprising: a charged particle beam generator for generating a beam of charged particles; a charged particle optical column arranged in a vacuum chamber, wherein the charged particle optical column is arranged for projecting the beam of charged particles onto a target, and wherein the charged particle optical column comprises a charged particle optical element for influencing the beam of charged particles; a source for providing a cleaning agent; a conduit connected to the source and arranged for introducing the cleaning agent towards the charged particle optical element;
wherein the charged particle optical element comprises: a charged particle transmitting aperture for transmitting and/or influencing the beam of charged particles, and at least one vent hole for providing a flow path between a first side and a second side of the charged particle optical element,
wherein the vent hole has a cross section which is larger than a cross section of the charged particle transmitting aperture. Further, a method for preventing or removing contamination in the charged particle transmitting apertures is disclosed, comprising the step of introducing the cleaning agent while the beam generator is active.
Apparatuses and methods for avoiding electrical breakdown from RF terminal to adjacent non-RF terminal
An isolation system includes an input junction coupled to one or more RF power supplies via a match network for receiving radio frequency (RF) power. The isolation system further includes a plurality of channel paths connected to the input junction for distributing the RF power among the channel paths. The isolation system includes an output junction connected between each of the channel paths and to an electrode of a plasma chamber for receiving portions of the distributed RF power to output combined power and providing the combined RF power to the electrode. Each of the channel paths includes bottom and top capacitors for blocking a signal of the different type than that of the RF power. The isolation system avoids a risk of electrical arcing created by a voltage difference between an RF terminal and a non-RF terminal when the terminals are placed proximate to each other.
Linear Motor for Vacuum and Vacuum Processing Apparatus
Since wires connected to a linear motor are routed in a vacuum sample chamber, outgassing is generated from wire coating and efficiency of assembly operations is reduced. Further, there is a problem that thrust generation efficiency of the linear motor is reduced when a gap between a coil and a permanent magnet of the linear motor cannot be small. In order to solve the above problems, a linear motor for vacuum is provided, the linear motor for vacuum including: a mover having a permanent magnet; and a stator having a support member to which a coil is fixed, in which the support member includes a vacuum sealing portion that vacuum seals with a wall surface of a vacuum sample chamber, and a feed-through for supplying a current to the coil provided in the vacuum sample chamber.
Monochromator and charged particle beam apparatus comprising the same
The present invention relates to a charged particle beam apparatus enabling a selection of a charged particle beam in a specified energy range by symmetrically arranging cylindrical electrostatic lenses deflecting a path of the charged particle beam and disposing an energy selection aperture between the cylindrical electrostatic lenses. Since an integral structure in which a central electrode and a plurality of electrodes that are arranged at a front portion and a rear portion in relation to the central electrode of a monochromator are fixed to each other through insulator, is applied, a mechanism for adjusting an offset with respect to an optical axis is simplified as compared to the case of separately providing the lenses at the front portion and the rear portion, respectively, and a secondary aberration is canceled in an exit plane due to symmetry of an optical system.
CHARGED PARTICLE BEAM IRRADIATION APPARATUS
A charged particle beam irradiation apparatus according to an embodiment includes: an optical column; a stage; a mount supporting the stage; a chamber provided on the mount and supporting the optical column; a detector configured to detect movement of the stage; actuator units each including a curved plate, a piezoelectric element, and a connector connected configured to transmit a first force generated by a change of the curvature of the curved plate to the mount; and an actuator control circuit configured to control the voltage applied to the piezoelectric element of each of the actuator units based on movement information, so that the first force is transmitted from the actuator units to the mount against a second force acting on the mount due to the movement of the stage.
Medical imaging method varying collimation of emitted radiation beam
This invention relates to a medical imaging method comprising: emitting a radiation beam from a radiation source of a rotating gantry, preferably of a rotating C-arm, on a volume of interest, varying collimation of said emitted radiation beam so as to change at least part-time a field of view of said emitted radiation beam so that there are at least a first part and a second part of said volume of interest such that, when said first part of said volume of interest is imaged, said second part of said volume of interest is shuttered, and when said second part of said volume of interest is imaged, said first part of said volume of interest is shuttered.
Enhanced FIB-SEM systems for large-volume 3D imaging
A microscopy system for imaging a sample can include a scanning electron microscope system configured for imaging a surface layer of the sample and a focused ion beam system configured for generating an ion beam for milling the surface layer away from a sample after it has been imaged. A movable mechanical shutter can be configured to be moved automatically into a position between the sample and the scanning electron microscope system, so that when the electron beam is not imaging the sample the movable mechanical shutter is positioned between the sample and the scanning electron microscope system.
Charged particle beam apparatus
The present invention provides apparatuses to inspect small particles on the surface of a sample such as wafer and mask. The apparatuses provide both high detection efficiency and high throughput by forming Dark-field BSE images. The apparatuses can additionally inspect physical and electrical defects on the sample surface by form SE images and Bright-field BSE images simultaneously. The apparatuses can be designed to do single-beam or even multiple single-beam inspection for achieving a high throughput.
GATE VALVE
A gate valve 1 includes: a plate 2 having an opening portion 9; a plate 3 located opposite to the plate 2; a guide space 5 formed between the plates 2, 3; and a plate 6 provided in the space 5. The plate 6 is slidable along a direction in which an opening portion 11 is offset from the opening portion 9 in the space 5 in a state in which the plate 6 is pressed by the pressing portion 13 and separated from the plate 2, and a position of the plate 6 is fixed with respect to the plate 2 in the space 5 in a state in which the plate 6 is pressed by the pressing portion 16 and is in contact with the plate 2. The pressing portions 13, 16 each have a bellows structure formed by diffusion-bonding metal plates 18 and 19 to each other.
SUBSTRATE PROCESSING METHOD
Examples of a substrate processing method include subjecting a substrate placed on a susceptor to plasma processing, applying power to an RF electrode facing the susceptor for only a predetermined static electricity removal time to generate plasma, thereby reducing an amount of charge of the substrate, measuring a self-bias voltage of the RF electrode while susceptor pins are made to protrude from a top surface of the susceptor and lift up the substrate, and by a controller, shortening the static electricity removal time when the self-bias voltage has a positive value, and lengthening the static electricity removal time when the self-bias voltage has a negative value.