Support arrangement for supporting a radiation projection system in a substrate processing apparatus, the support arrangement comprising: a support body for supporting the radiation projection system; electrical wiring for supplying voltages to components within the radiation projection system and/or for supplying control data for modulation of radiation to be projected onto a target surface by the radiation projection system; optical fibers, for supplying control data for modulation of radiation to be projected onto a target surface by the radiation projection system, and a cooling arrangement comprising one or more fluid conduits for cooling the radiation projection system; the electrical wiring, the optical fibers, and the cooling arrangement being at least partly accommodated in and/or supported by the support body.

A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.

The present disclosure relates to an ion implantation amount adjustment device that includes: an adjuster configured to turn on or off an ion outlet of the ion implantation apparatus; and an actuator configured to control movement of the adjuster to adjust an opening degree of the ion outlet.

An edge ring arrangement for a processing chamber includes a first ring configured to surround and overlap a radially outer edge of an upper plate of a pedestal arranged in the processing chamber, a second ring arranged below the first moveable ring, wherein a portion of the first ring overlaps the second ring, a first actuator configured to actuate a first pillar to selectively move the first ring to a raised position and a lowered position relative to the pedestal, and a second actuator configured to actuate a second pillar to selectively move the second ring to a raised position and a lowered position relative to the pedestal.

A charged particles beam column for inspecting a sample in a sample plane is presented. The charged particles beam column comprises: a charged particles source generating a charged particles beam propagating along a general propagation path towards the sample plane; and at least one charged particles beam shaping unit. The charged particles shaping unit comprises at least one high-frequency electromagnetic radiation generator located in a vicinity of said general propagation path of the charged particles beam and controllably operated to perform synchronized generation of said high-frequency electromagnetic radiation towards at least one interaction region in said general propagation path, to cause interaction between said radiation and the charged particles, thereby directly affecting energy properties of the charged particles passing through said at least one interaction region in the general propagation path and directly affecting spectral resolution of the charged particles beam at said sample plane.

An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns, the actuator system including a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.

An electron beam irradiation device (1) irradiates an electron beam from an electrode (12) that is connected to a tip of a conductive part (21) which projects inside a vacuum container (11), to the exterior of the vacuum container (11) via a metal foil (111) that constitutes a portion of a peripheral wall of the vacuum container (11). The electron beam irradiation device (1) includes a tubular insulator (22) that surrounds the periphery of the conductive part (21) in the vacuum container (11), and an amorphous carbon film (23) that covers the outer peripheral surface of the insulator (22).

Operating a gas feed device for a particle beam apparatus includes predetermining a flow rate of a precursor through an outlet of a precursor reservoir containing the precursor to be fed onto an object, loading a temperature of the precursor reservoir, the temperature being associated with the predetermined flow rate, from a database into a control unit, setting a temperature of the precursor reservoir to the temperature loaded from the database using a temperature setting unit, and determining at least one functional parameter of the precursor reservoir depending on the flow rate and the temperature, loaded from the database, using the control unit and informing a user of the gas feed device about the determined functional parameter. Informing the user of the gas feed device about the functional parameter may include displaying the functional parameter on a display unit, outputting an optical signal, or outputting an acoustic signal.

The disclosure relates to systems and method for processing images. The method includes selecting a predetermined reference structure, the predetermined reference structure having a known feature size/shape. The method also includes obtaining a reference image of the predetermined reference structure, and capturing a calibration image of the predetermined reference structure using an observation device. The calibration image includes a plurality of features. Additionally, the method includes identifying at least one portion of the plurality of features of the calibration image that include a feature size/shape substantially similar to the known feature size and shape of the predetermined reference structure. Finally, the method includes combining the identified portion of the plurality of features of the calibration image to form a stacked feature image, and determining a point spread function (PSF) of the observation device by comparing the obtained reference image with the stacked feature image.

The disclosure relates to systems and method for processing images. The method includes selecting a predetermined reference structure, the predetermined reference structure having a known feature size/shape. The method also includes obtaining a reference image of the predetermined reference structure, and capturing a calibration image of the predetermined reference structure using an observation device. The calibration image includes a plurality of features. Additionally, the method includes identifying at least one portion of the plurality of features of the calibration image that include a feature size/shape substantially similar to the known feature size and shape of the predetermined reference structure. Finally, the method includes combining the identified portion of the plurality of features of the calibration image to form a stacked feature image, and determining a point spread function (PSF) of the observation device by comparing the obtained reference image with the stacked feature image.