A multi-positional valve is used to control the destination of gas flows from multiple gas sources. In one valve position the gases flow to an isolated vacuum system where the flow rate and mixture can be adjusted prior to introduction into a sample vacuum chamber. In another valve position the pre-mixed gases flow from the isolated vacuum chamber and through a needle into the sample vacuum chamber.

A charged particle beam apparatus which automatically prepares a sample piece from a sample, includes: a charged particle beam irradiation optical system configured to perform irradiation of a charged particle beam; a sample stage configured to move, the sample being placed on the sample stage; a sample piece relocation unit configured to hold and transport the sample piece which is separated and picked up from the sample; a holder fixing stage which holds a sample piece holder to which the sample piece is relocated; and a computer which performs positional control in relation to a target object based on a template and positional information which is obtained from an image of the target object, the template being generated based on an absorption current image of the target object which is acquired using the irradiation of the charged particle beam.

An electron microscope includes: a sample holder; a first optical system irradiating and scanning the sample; an electron detection unit detecting secondary electrons discharged from the sample; a first vacuum chamber which holds the sample holder, the first optical system, and the electron detection unit in a vacuum atmosphere; a display unit displaying a microscopic image of the sample; and a control unit which controls the sample holder and the operation of the first optical system. The electron microscope includes a second vacuum chamber different from the first vacuum chamber, and a second optical system in the second vacuum chamber and is different from the first optical system. The second optical system and the control unit are capable of mutual communication, and the second vacuum chamber has a state changing means which changes the state of the sample.

Apparatus for treating a gas in a conduit of a substrate processing system are provided. In some embodiments, an apparatus for treating a gas in a conduit of a substrate processing system includes: a dielectric tube configured to be coupled to a conduit of a substrate processing system to allow a flow of gases through the dielectric tube, wherein the dielectric tube has a conical sidewall; and a radio frequency (RF) coil wound about an outer surface of the conical sidewall of the dielectric tube. In some embodiments, the RF coil is hollow and includes coolant fittings to couple the hollow RF coil to a coolant supply.

Compositions, methods, and apparatus are described for carrying out nitrogen ion implantation, which avoid the incidence of severe glitching when the nitrogen ion implantation is followed by another ion implantation operation susceptible to glitching, e.g., implantation of arsenic and/or phosphorus ionic species. The nitrogen ion implantation operation is advantageously conducted with a nitrogen ion implantation composition introduced to or formed in the ion source chamber of the ion implantation system, wherein the nitrogen ion implantation composition includes nitrogen (N.sub.2) dopant gas and a glitching-suppressing gas including one or more selected from the group consisting of NF.sub.3, N.sub.2F.sub.4, F.sub.2, SiF.sub.4, WF.sub.6, PF.sub.3, PF.sub.5, AsF.sub.3, AsF.sub.5, CF.sub.4 and other fluorinated hydrocarbons of C.sub.xF.sub.y (x≥1, y≥1) general formula, SF.sub.6, HF, COF.sub.2, OF.sub.2, BF.sub.3, B.sub.2F.sub.4, GeF.sub.4, XeF.sub.2, O.sub.2, N.sub.2O, NO, NO.sub.2, N.sub.2O.sub.4, and O.sub.3, and optionally hydrogen-containing gas, e.g., hydrogen-containing gas including one or more selected from the group consisting of H.sub.2, NH.sub.3, N.sub.2H.sub.4, B.sub.2H.sub.6, AsH.sub.3, PH.sub.3, SiH.sub.4, Si.sub.2H.sub.6, H.sub.2S, H.sub.2Se, CH.sub.4 and other hydrocarbons of C.sub.xH.sub.y (x≥1, y≥1) general formula and GeH.sub.4.

An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns, the actuator system including a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.

A system for preventing collisions between components in a particle beam instrument is disclosed. The system is particularly beneficial in use with instruments wherein moveable components are used within a chamber that obscures them from being viewed from outside the chamber. The system comprises: a capacitance sensor configured to monitor the capacitance between a first component and a second component of the instrument, and a proximity module configured to: derive a capacitance parameter from the monitored capacitance between the first component and the second component; and output a proximity alert signal in accordance with a comparison between the derived capacitance parameter and a predetermined capacitance parameter threshold value.

A vibration damping system for a charged particle beam apparatus according to the present invention includes a column through which a charged particle beam passes, a vibration detection unit that detects vibration of the column, a damping mechanism that applies vibration to the column to suppress the vibration of the column, and a control device that controls the damping mechanism. The control device includes a damping gain control unit that amplifies a detection signal of the vibration detection unit with a set amplification factor and outputs an amplified detection signal as a control signal to the damping mechanism, and a saturation suppression unit that adjusts a feedback gain value of the damping gain control unit according to a detection signal of the vibration detection unit, a signal of the damping mechanism, and a maximum output value and a minimum output value of the damping mechanism.

There is provided an ion source device including a pair of first electrodes for emitting an electron, a second electrode that defines a region in which the electron is enclosed and to which raw material source gas is supplied, between the pair of first electrodes, and that has a hole portion through which an ion generated by collision between the electron and the material gas is extruded, an extraction electrode disposed apart from the second electrode along an extraction direction of the ion extracted from the second electrode so that a potential difference is formed between the second electrode and the extraction electrode, and an intermediate electrode disposed between the second electrode and the extraction electrode. A first potential difference between the second electrode and the intermediate electrode is greater than a second potential difference between the second electrode and the extraction electrode.

Apparatus and methods to reduce unwanted magnetic fields and unwanted motion in precision instruments are described. A coil assembly that is used to generate an opposing magnetic field can include a first coil configured to generate a static magnetic field and a second coil configured to generate a time-varying magnetic field. The first and second coils can be in close proximity and sized to suppress magnetic fields over a large localized region. The first coil can be connected to a choke to increase its impedance seen by the second coil.