A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EU mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.

An edge ring arrangement for a processing chamber includes a first ring configured to surround and overlap a radially outer edge of an upper plate of a pedestal arranged in the processing chamber, a second ring arranged below the first moveable ring, wherein a portion of the first ring overlaps the second ring, a first actuator configured to actuate a first pillar to selectively move the first ring to a raised position and a lowered position relative to the pedestal, and a second actuator configured to actuate a second pillar to selectively move the second ring to a raised position and a lowered position relative to the pedestal.

A charged particle beam irradiation apparatus according to an embodiment includes: an optical column; a stage; a mount supporting the stage; a chamber provided on the mount and supporting the optical column; a detector configured to detect movement of the stage; actuator units each including a curved plate, a piezoelectric element, and a connector connected configured to transmit a first force generated by a change of the curvature of the curved plate to the mount; and an actuator control circuit configured to control the voltage applied to the piezoelectric element of each of the actuator units based on movement information, so that the first force is transmitted from the actuator units to the mount against a second force acting on the mount due to the movement of the stage.

To compensate for hysteresis in an actuator, a path between a first position and a second position can be selected, and a drive signal can be applied to an actuator element that includes a hysteresis-compensated portion to move an object along the selected path.

A method of producing a compensation signal to compensate for misalignment of a drive unit clamp element can include applying a clamp element drive signal to a drive unit clamp element to engage a mover element. A first displacement of the mover element can be determined. A first compensation signal to be applied to one or more drive unit shear elements can be determined based at least in part on the first displacement. The first compensation signal can be applied to the one or more drive unit shear elements and the clamp element drive signal can be applied to the drive unit clamp element. A second displacement can be determined in response to the application of the first compensation signal and the clamp element drive signal. The second displacement can then be compared to a preselected threshold. For a second displacement less than the preselected threshold, combining the first compensation signal with an initial shear element drive signal to produce a modified shear element drive signal, and for a second displacement greater than the preselected threshold, determining a second compensation signal to be applied to the one or more drive unit shear elements.

A thickness of a bonding material (8) is varied in a radial direction orthogonal to a central axis (P) of the tubular anode member (6), the bonding material (8) being used for bonding a transmitting substrate (7) for supporting a target layer (9) and a tubular anode member (6) in a direction along the central axis (P). Thus, a region in which a circumferential tensile stress of the bonding material (8) is alleviated is formed in the direction along the central axis (P) to prevent a crack from developing in the bonding material (8).

A charged particle beam system is disclosed, comprising: a charged particle beam generator for generating a beam of charged particles; a charged particle optical column arranged in a vacuum chamber, wherein the charged particle optical column is arranged for projecting the beam of charged particles onto a target, and wherein the charged particle optical column comprises a charged particle optical element for influencing the beam of charged particles; a source for providing a cleaning agent; a conduit connected to the source and arranged for introducing the cleaning agent towards the charged particle optical element;
wherein the charged particle optical element comprises: a charged particle transmitting aperture for transmitting and/or influencing the beam of charged particles, and at least one vent hole for providing a flow path between a first side and a second side of the charged particle optical element,
wherein the vent hole has a cross section which is larger than a cross section of the charged particle transmitting aperture. Further, a method for preventing or removing contamination in the charged particle transmitting apertures is disclosed, comprising the step of introducing the cleaning agent while the beam generator is active.

A charged particle beam system is disclosed, comprising: a charged particle beam generator for generating a beam of charged particles; a charged particle optical column arranged in a vacuum chamber, wherein the charged particle optical column is arranged for projecting the beam of charged particles onto a target, and wherein the charged particle optical column comprises a charged particle optical element for influencing the beam of charged particles; a source for providing a cleaning agent; a conduit connected to the source and arranged for introducing the cleaning agent towards the charged particle optical element;
wherein the charged particle optical element comprises: a charged particle transmitting aperture for transmitting and/or influencing the beam of charged particles, and at least one vent hole for providing a flow path between a first side and a second side of the charged particle optical element,
wherein the vent hole has a cross section which is larger than a cross section of the charged particle transmitting aperture. Further, a method for preventing or removing contamination in the charged particle transmitting apertures is disclosed, comprising the step of introducing the cleaning agent while the beam generator is active.

A charged particle beam device includes: a plasma generation device attached to a sample chamber through a connecting member; a guide including a hollow portion configured to guide a plasma generated by the plasma generation device in a direction toward a stage; a first voltage source configured to apply a voltage to the stage; and a second voltage source configured to adjust the plasma generation device and the guide to a predetermined potential, in which the guide is disposed to avoid an opening of an objective lens through which a charged particle beam passes and to position a tip of the guide between the objective lens and the stage.

A multi-column scanning electron microscopy (SEM) system includes a column assembly, where the column assembly includes a first substrate array assembly and at least a second substrate array assembly. The system also includes a source assembly, the source assembly including two or more illumination sources configured to generate two or more electron beams and two or more sets of a plurality of positioners configured to adjust a position of a particular illumination source of the two or more illumination sources in a plurality of directions. The system also includes a stage configured to secure a sample, where the column assembly directs at least a portion of the two or more electron beams onto a portion of the sample.