The present invention relates to a method of training a network for reconstructing and/or segmenting microscopic images comprising the step of training the network in the cloud. Further, for training the network in the cloud training data comprising microscopic images can be uploaded into the cloud and a network is trained by the microscopic images. Moreover, for training the network the network can be benchmarked after the reconstructing and/or segmenting of the microscopic images. Wherein for benchmarking the network the quality of the image(s) having undergone the reconstructing and/or segmenting by the network can be compared with the quality of the image(s) having undergone reconstructing and/or segmenting by already known algorithm and/or a second network.

Described herein are a system and method of preparing integrated circuits (ICs) so that the ICs remain electrically active and can have their active circuitry probed for diagnostic and characterization purposes using charged particle beams. The system employs an infrared camera capable of looking through the silicon substrate of the ICs to image electrical circuits therein, a focused ion beam system that can both image the IC and selectively remove substrate material from the IC, a scanning electron microscope that can both image structures on the IC and measure voltage contrast signals from active circuits on the IC, and a means of extracting heat generated by the active IC. The method uses the system to identify the region of the IC to be probed, and to selectively remove all substrate material over the region to be probed using ion bombardment, and further identifies endpoint detection means of milling to the required depth so as to observe electrical states and waveforms on the active IC.

The present disclosure discloses a transmission electron microscope in-situ chip and a preparation method thereof. The transmission electron microscope in-situ chip includes a transmission electron microscope high-resolution in-situ gas phase heating chip, a transmission electron microscope high-resolution in-situ liquid phase heating chip and a transmission electron microscope in-situ electrothermal coupling chip. The transmission electron microscope high-resolution in-situ gas phase heating chip and the transmission electron microscope high-resolution in-situ liquid phase heating chip are respectively suitable for gas samples and liquid samples, and the transmission electron microscope in-situ electrothermal coupling chip realizes the multi-functional embodiment of electrothermal coupling. The three transmission electron microscope in-situ chips have the advantages of high resolution and low sample drift rate.

The present disclosure discloses a transmission electron microscope in-situ chip and a preparation method thereof. The transmission electron microscope in-situ chip includes a transmission electron microscope high-resolution in-situ gas phase heating chip, a transmission electron microscope high-resolution in-situ liquid phase heating chip and a transmission electron microscope in-situ electrothermal coupling chip. The transmission electron microscope high-resolution in-situ gas phase heating chip and the transmission electron microscope high-resolution in-situ liquid phase heating chip are respectively suitable for gas samples and liquid samples, and the transmission electron microscope in-situ electrothermal coupling chip realizes the multi-functional embodiment of electrothermal coupling. The three transmission electron microscope in-situ chips have the advantages of high resolution and low sample drift rate.

Aspects of the disclosure provide a method of tilting characterization. The method includes measuring a first tilting shift of structures based on a first disposition of the structures. The structures are formed in a vertical direction on a horizontal plane of a product. A second tilting shift of the structures is measured based on a second disposition of the structures. The second disposition is a horizontal flip of the first disposition. A corrected tilting shift is determined based on the first tilting shift and the second tilting shift.

Aspects of the disclosure provide a method of tilting characterization. The method includes measuring a first tilting shift of structures based on a first disposition of the structures. The structures are formed in a vertical direction on a horizontal plane of a product. A second tilting shift of the structures is measured based on a second disposition of the structures. The second disposition is a horizontal flip of the first disposition. A corrected tilting shift is determined based on the first tilting shift and the second tilting shift.

The device for observing permeation and diffusion path of observation target gas includes: a scanning electron microscope 15; an observation target ion detecting unit 20; an observation target gas supply unit 19; a diaphragm-type sample holder 12, to which the sample is mounted in attachable/detachable state, as a diaphragm dividing between the analysis chamber 11 and the observation target gas pipe 14; and a control unit 50. The control unit acquires a SEM image and at the same time detects the observation target gas, which diffuses within the sample and is discharged to the surface of the sample, by electron stimulated desorption, in a state where stress is applied to the sample due to differential pressure generated between the analysis chamber and the observation target gas pipe by supplying the observation target gas, and obtains an ESD image of the observation target ions.

An electron microscope includes an electron source for emitting an electron beam, an illumination lens for focusing the beam, an aberration corrector for correcting aberrations, an illumination deflector assembly disposed between the illumination lens and the aberration corrector and operating to deflect the beam and to vary its tilt relative to a sample, a scanning deflector for scanning the sample with the beam, an objective lens, a detector for detecting electrons transmitted through the sample and producing an image signal, a control section for controlling the illumination deflector assembly, and an image generating section for receiving the image signal and generating a differential phase contrast (DPC) image. The tilt of the beam is varied by the illumination deflector assembly such that the image generating section generates a plurality of DPC images at different tilt angles of the beam and creates a final image based on the DPC images.

Described herein are methods for continuous production of an exfoliated two-dimensional (2D) material comprising passing a 2D material mixture through a convergent-divergent nozzle, the 2D material mixture comprising a 2D layered material and a compressible fluid. The method of the present disclosure employs physical compression and expansion of a flow of high-pressure gases, leaving the 2D layered material largely defect free to produce an exfoliated 2D layered in a simple, continuous, and environmentally friendly manner.

Described herein are methods for continuous production of an exfoliated two-dimensional (2D) material comprising passing a 2D material mixture through a convergent-divergent nozzle, the 2D material mixture comprising a 2D layered material and a compressible fluid. The method of the present disclosure employs physical compression and expansion of a flow of high-pressure gases, leaving the 2D layered material largely defect free to produce an exfoliated 2D layered in a simple, continuous, and environmentally friendly manner.