Disclosed herein are apparatuses, systems, methods, and computer-readable media relating to area selection in charged particle microscope (CPM) imaging. For example, in some embodiments, a CPM support apparatus may include: first logic to generate a first data set associated with an area of a specimen by processing data from a first imaging round of the area by a CPM; second logic to generate predicted parameters of the area; and third logic to determine whether a second imaging round of the area is to be performed by the CPM based on the predicted parameters of the area; wherein the first logic is to, in response to a determination by the third logic that a second imaging round of the area is to be performed, generate a second data set, including measured parameters, associated with the area by processing data from a second imaging round of the area by the CPM.

A method of evaluating a region of interest of a sample including: positioning the sample within in a vacuum chamber of an evaluation tool that includes a scanning electron microscope (SEM) column and a focused ion beam (FIB) column; acquiring a plurality of two-dimensional images of the region of interest by alternating a sequence of delayering the region of interest with a charged particle beam from the FIB column and imaging a surface of the region of interest with the SEM column; generating an initial three-dimensional data cube representing the region of interest by stacking the plurality of two-dimensional images on top of each other in an order in which they were acquired; identifying distortions within the initial three-dimensional data cube; and creating an updated three-dimensional data cube that includes corrections for the identified distortions.

Disclosed herein are techniques directed toward a protective shutter for a charged particle microscope. An example apparatus at least includes a charged particle column and a focused ion beam (FIB) column, a gas injection nozzle coupled to a translation device, the translation device configured to insert the gas injection nozzle in close proximity to a stage, and a shutter coupled to the gas injection nozzle and arranged to be disposed between the sample and the SEM column when the gas injection nozzle is inserted in close proximity to the stage.

Apparatus and methods are disclosed for vibration-free cryogenic cooling, suitable for TEM and other analytic equipment. A thermal battery includes one or more of: a cryocooler, a thermal switch, a thermal cold storage reservoir, and a cold finger. The thermal reservoir is mounted outside a sample chamber. The cold finger provides thermal coupling between the reservoir and a sample holder inside the sample chamber. In varying embodiments, sample holder and sample temperatures are regulated by a heater or by an inline variable thermal resistor. Cyclic phased operation includes cooling the reservoir, decoupling the cryocooler from the reservoir, and temperature-regulated passive vibration-free thermal energy extraction from sample to reservoir. The described system delivers a stand time of 12 hours at 20 K. Temperature regulation, a hybrid thermal switch, damping of thermal fluctuations, and material selection are described.

A charged-particle-beam microscope for imaging a sample, the microscope having a stage to hold a sample and an automated sample feeder to repeatedly and automatically exchange the sample from among a plurality of samples. A charged-particle-beam column is provided to direct a charged-particle-beam onto the sample, the charged-particle-beam column. The column includes a charged-particle-beam source to generate an electron beam and charged-particle-beam optics to converge the charged-particle beam onto the sample. A detector is provided to detect charged particles emanating from the sample to generate image data. A controller executes an artificial intelligence algorithm to analyze the image data.

A segmented detector device with backside illumination. The detector is able to collect and differentiate between secondary electrons and backscatter electrons. The detector includes a through-hole for passage of a primary electron beam. After hitting a sample, the reflected secondary and backscatter electrons are collected via a vertical structure having a P+/P−/N+ or an N+/N−/P+ composition for full depletion through the thickness of the device. The active area of the device is segmented using field isolation insulators located on the front side of the device.

A segmented detector device with backside illumination. The detector is able to collect and differentiate between secondary electrons and backscatter electrons. The detector includes a through-hole for passage of a primary electron beam. After hitting a sample, the reflected secondary and backscatter electrons are collected via a vertical structure having a P+/P−/N+ or an N+/N−/P+ composition for full depletion through the thickness of the device. The active area of the device is segmented using field isolation insulators located on the front side of the device.

Systems and methods of profiling a charged-particle beam are disclosed. The method of profiling a charged-particle beam may comprise activating a charged-particle source to generate the charged-particle beam along a primary optical axis, modifying the charged-particle beam by adjusting an interaction between the charged-particle beam and a standing optical wave, detecting charged particles from the modified charged-particle beam after the interaction with the standing optical wave, and determining a profile of the charged-particle beam based on the detected charged particles. Alternatively, the method may include activating an optical source, modifying the optical beam by adjusting an interaction between the optical beam and a charged-particle beam, detecting an optical signal from the modified optical beam, and determining a characteristic of the charged-particle beam based on the detected optical signal.

The present disclosure relates to the determination of a pattern height of a pattern, which has been produced with extreme ultraviolet (EUV) lithography in a resist film. The determination is performed by using an electron beam (e-beam) system, in particular, by using a scanning electron microscope (SEM). In this respect, the disclosure provides a device for determining the pattern height, wherein the device comprising a processor. The processor is configured to obtain a SEM image of the pattern from an SEM. Further, the processor is configured to determine a contrast value related to the pattern based on the obtained SEM image. Subsequently, the processor is configured to determine the pattern height based on calibration data and the determined contrast value.

A sample attachment device includes a mount, a mounted depression, and a pressure release depression. Liquid and air bubbles can pass the pressure release depression. The mounted depression is on the mount. A cartridge is mounted on the mounted depression. The pressure release depression is in the mounted depression. The pressure release depression is vertically under the cartridge when the cartridge is mounted on the mounted depression.