Patent classifications
H01J63/02
Electron emission source and method for fabricating the same
Provided is an electron emission source including a substrate, a fixed structure provided on the substrate, and an electron emission yarn provided between the substrate and the fixed structure. The fixed structure includes a first portion having a first width and a second portion having a second width greater than the first width, and the electron emission yarn extends on a first sidewall of the first portion of the fixed structure from between the fixed structure and the substrate.
Device for generating linearly polarized ultra-short terahertz wave
Provided is a linearly polarized ultra-short terahertz wave generating device which has a parabolic barrel mirror installed at one side of a multiple thin film, to generate an ultra-short terahertz wave having single linear-polarized light and uniformly formed output distribution.
Device for generating linearly polarized ultra-short terahertz wave
Provided is a linearly polarized ultra-short terahertz wave generating device which has a parabolic barrel mirror installed at one side of a multiple thin film, to generate an ultra-short terahertz wave having single linear-polarized light and uniformly formed output distribution.
ULTRAVIOLET FIELD-EMISSION LAMPS AND THEIR APPLICATIONS
Improved ultraviolet field-emission lamps can be safely deployed close to people because they eliminate the use of toxic materials, mitigate heating issues, and emit light in a wavelength range that is safe for human exposure.
Method for manufacturing nanostructures for a field emission cathode
The present invention relates to the field of field emission lighting, and specifically to a method for forming a field emission cathode. The method comprises arranging a growth substrate in a growth solution comprising a Zn-based growth agent, the growth solution having a pre-defined pH-value at room temperature; increasing the pH value of the growth solution to reach a nucleation phase; upon increasing the pH of the solution nucleation starts. The growth phase is then entered by decreasing the pH. The length of the nanorods is determined by the growth time. The process is terminated by increasing the pH to form sharp tips. The invention also relates to a structure for such a field emission cathode and to a lighting arrangement comprising the field emission cathode.
Method for manufacturing nanostructures for a field emission cathode
The present invention relates to the field of field emission lighting, and specifically to a method for forming a field emission cathode. The method comprises arranging a growth substrate in a growth solution comprising a Zn-based growth agent, the growth solution having a pre-defined pH-value at room temperature; increasing the pH value of the growth solution to reach a nucleation phase; upon increasing the pH of the solution nucleation starts. The growth phase is then entered by decreasing the pH. The length of the nanorods is determined by the growth time. The process is terminated by increasing the pH to form sharp tips. The invention also relates to a structure for such a field emission cathode and to a lighting arrangement comprising the field emission cathode.
ELECTRON EMISSION SOURCE AND METHOD FOR FABRICATING THE SAME
Provided is an electron emission source including a substrate, a fixed structure provided on the substrate, and an electron emission yarn provided between the substrate and the fixed structure. The fixed structure includes a first portion having a first width and a second portion having a second width greater than the first width, and the electron emission yarn extends on a first sidewall of the first portion of the fixed structure from between the fixed structure and the substrate.
A FIELD EMISSION LIGHT SOURCE ADAPTED TO EMIT UV LIGHT
The present invention generally relates to a field emission light source and specifically to a field emission light source adapted to emit ultraviolet (UV) light. The light source has a UV emission member provided with an electron-excitable UV emitting material. The material is at least one of LuPO.sub.3:Pr.sup.3+, Lu.sub.2Si.sub.2O.sub.2:Pr.sup.3+, LaPO.sub.4:Pr.sup.3+, YBO.sub.3:Pr.sup.3+ and YPO.sub.4:Bi.sup.3+.
Target for ultraviolet light generation, and method for manufacturing same
A target for ultraviolet light generation 20A includes a sapphire substrate 21 that transmits ultraviolet light UV, an interlayer 22 that is in contact with the sapphire substrate 21, includes oxygen atoms and aluminum atoms in a composition, and transmits ultraviolet light UV, and a luminous layer 23 that is provided on the interlayer 22, includes oxide crystals containing rare earth elements to which an activator agent is added, and receives electron beams EB so as to generate ultraviolet light UV.
Target for ultraviolet light generation, and method for manufacturing same
A target for ultraviolet light generation 20A includes a sapphire substrate 21 that transmits ultraviolet light UV, an interlayer 22 that is in contact with the sapphire substrate 21, includes oxygen atoms and aluminum atoms in a composition, and transmits ultraviolet light UV, and a luminous layer 23 that is provided on the interlayer 22, includes oxide crystals containing rare earth elements to which an activator agent is added, and receives electron beams EB so as to generate ultraviolet light UV.